公开(公告)号：US20240213024A1

公开(公告)日：2024-06-27

申请号：US18418976

申请日：2024-01-22

Applicant: AKHAN Semiconductor, Inc.

Inventor： Adam Khan

IPC: H01L21/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66 ,  H01L29/868

CPC classification number: H01L21/043 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0415 ,  H01L21/042 ,  H01L21/0435 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/76871 ,  H01L29/1602 ,  H01L29/36 ,  H01L29/6603 ,  H01L29/868

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

公开(公告)号：US08933462B2

公开(公告)日：2015-01-13

申请号：US13725978

申请日：2012-12-21

Applicant: Adam Khan

Inventor： Adam Khan

IPC: H01L29/15 ,  H01L21/768 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/868

CPC classification number: H01L21/043 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0415 ,  H01L21/042 ,  H01L21/0435 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/76871 ,  H01L29/1602 ,  H01L29/36 ,  H01L29/6603 ,  H01L29/868

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Abstract translation: 本文公开了一种用于制造金刚石半导体的新的和改进的系统和方法。 该方法可以包括以下步骤：选择具有表面的金刚石半导体材料，将表面暴露于蚀刻室中的源气体，在表面上形成碳化物界面接触层; 并在界面层上形成金属层。

公开(公告)号：US20130161648A1

公开(公告)日：2013-06-27

申请号：US13725978

申请日：2012-12-21

Applicant: Adam Khan

Inventor： Adam Khan

IPC: H01L21/768 ,  H01L29/16

CPC classification number: H01L21/043 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0415 ,  H01L21/042 ,  H01L21/0435 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/76871 ,  H01L29/1602 ,  H01L29/36 ,  H01L29/6603 ,  H01L29/868

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

公开(公告)号：US06833027B2

公开(公告)日：2004-12-21

申请号：US10254809

申请日：2002-09-26

Applicant: James E. Butler ,  Michael W. Geis ,  Donald D. Flechtner ,  Robert L. Wright

Inventor： James E. Butler ,  Michael W. Geis ,  Donald D. Flechtner ,  Robert L. Wright

IPC: C30B2904

CPC classification number: H01L21/0435 ,  C30B25/02 ,  C30B29/04 ,  H01L21/041 ,  H01L29/6603

Abstract: A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.

Abstract translation: 一种制造肖特基二极管的方法，包括以下步骤：提供包含表面的单晶金刚石; 将单晶金刚石置于CVD系统中; 将金刚石加热至至少约950℃的温度; 提供能够生长金刚石膜并通过CVD系统包含硫化合物的气体混合物; 在单晶金刚石的表面生长外延金刚石膜; 在至少约650℃的温度下在空气中烘烤金刚石使其最小化金刚石氧化的时间; 以及制造包含金刚石膜的肖特基二极管。 肖特基二极管包括外延金刚石膜，并且能够在不超过约300μm的距离内阻挡至少约6kV。

公开(公告)号：US20030075100A1

公开(公告)日：2003-04-24

申请号：US10254809

申请日：2002-09-26

Inventor： James E. Butler ,  Michael W. Geis ,  Donald D. Flechtner ,  Robert L. Wright

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: H01L21/0435 ,  C30B25/02 ,  C30B29/04 ,  H01L21/041 ,  H01L29/6603

Abstract: A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950null C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650null C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 nullm.

Abstract translation: 一种制造肖特基二极管的方法，包括以下步骤：提供包含表面的单晶金刚石; 将单晶金刚石置于CVD系统中; 将金刚石加热至至少约950℃的温度; 提供能够生长金刚石膜并通过CVD系统包含硫化合物的气体混合物; 在单晶金刚石的表面生长外延金刚石膜; 在至少约650℃的温度下在空气中烘烤金刚石使其最小化金刚石氧化的时间; 以及制造包含金刚石膜的肖特基二极管。 肖特基二极管包括外延金刚石膜，并且能够在不超过约300μm的距离内阻挡至少约6kV。

公开(公告)号：US20180182852A1

公开(公告)日：2018-06-28

申请号：US15883935

申请日：2018-01-30

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Adam L. Friedman ,  Olaf M. J. van 't Erve ,  Jeremy T. Robinson ,  Berend T. Jonker ,  Keith E. Whitener

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66984 ,  H01L21/02104 ,  H01L21/02527 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L21/042 ,  H01L21/0435 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/66015 ,  H01L29/88 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.

公开(公告)号：US20140319542A1

公开(公告)日：2014-10-30

申请号：US14261364

申请日：2014-04-24

Applicant: Technion Research and Development Foundation Ltd.

Inventor： Rafi KALISH ,  Moshe TORDJMAN

IPC: H01L29/16 ,  H01L21/02 ,  H01B1/04

CPC classification number: H01L29/1602 ,  H01B1/04 ,  H01L21/041 ,  H01L21/0435 ,  H01L29/267 ,  Y10T428/265 ,  Y10T428/30

Abstract: The present invention provides a conducting material comprising a carbon-based material selected from a diamond or an insulating diamond-like carbon, having a hydrogen-terminated surface and a layer of MoO3 coating said surface; as well as a method for the fabrication of such a material. The conducting material of the invention is useful in the fabrication of electronic components, electrodes, sensors, diodes, field effect transistors, and field emission electron sources.

Abstract translation: 本发明提供一种导电材料，其包含选自金刚石或绝缘类金刚石碳的碳基材料，具有氢封端表面和所述表面上的MoO 3层; 以及制造这种材料的方法。 本发明的导电材料可用于制造电子部件，电极，传感器，二极管，场效应晶体管和场发射电子源。

公开(公告)号：US20100117098A1

公开(公告)日：2010-05-13

申请号：US12597578

申请日：2008-04-14

Applicant: Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata

Inventor： Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata

IPC: H01L29/47 ,  H01L29/12 ,  H01L21/04

CPC classification number: H01L29/47 ,  C22C5/04 ,  H01L21/0435 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/872

Abstract: To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.

Abstract translation: 为了在金刚石半导体中提供肖特基电极，该金刚石半导体具有良好的金刚石粘合性，具有由于外部机械压力不均匀而不会剥离的接触表面，在二极管形成过程中不会导致产率降低 并且不会导致电流 - 电压特性的劣化，以及制造肖特基电极的方法。 一种肖特基电极，其包括：形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜，其中Pt族合金包含Pt为50〜99.9质量％，0.1〜50质量％ 包括：散射岛状图案金属薄膜，其形成在形成于基板上的金刚石表面上，并且包括选自Pt和Pd中的一种; 以及包括选自Ru，Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。

公开(公告)号：US20060183267A1

公开(公告)日：2006-08-17

申请号：US11236304

申请日：2005-09-27

Applicant: Fabrizio Roccaforte ,  Vito Raineri ,  Francesco La Via ,  Mario Saggio

Inventor： Fabrizio Roccaforte ,  Vito Raineri ,  Francesco La Via ,  Mario Saggio

IPC: H01L21/00

CPC classification number: H01L21/0435 ,  H01L21/0415

Abstract: A process realizes a Schottky contact on an epitaxial layer of a semiconductor substrate. The process includes depositing a conductive metallic layer on a surface of the epitaxial layer, with achievement of a interface region of conductive metallic layer/semiconductor. The process further comprises a ionic irradiation step directed towards the surface of the epitaxial layer for forming a modified intermediate layer of at least one surface portion of the epitaxial layer for making the electric behavior of the interface region substantially dependant on the contact between the conductive metallic layer and the obtained modified intermediate layer.

Abstract translation: 一种工艺在半导体衬底的外延层上实现肖特基接触。 该方法包括在外延层的表面上沉积导电金属层，实现导电金属层/半导体的界面区域。 该方法还包括指向外延层的表面的离子照射步骤，用于形成外延层的至少一个表面部分的改性中间层，以使界面区域的电性能基本上取决于导电金属 层和得到的改性中间层。

公开(公告)号：US5869390A

公开(公告)日：1999-02-09

申请号：US871552

申请日：1997-06-09

Applicant: Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

Inventor： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

IPC: H01L21/28 ,  H01L21/04 ,  H01L23/14 ,  H01L23/373 ,  H01L21/44 ,  H01L21/00

CPC classification number: H01L21/0435 ,  H01L21/043 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10S148/10 ,  Y10S148/148

Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

Abstract translation: 公开了一种在金刚石上形成电极的方法，包括以下步骤：在金刚石或金刚石膜上形成掩模图案; 通过惰性气体的等离子体处理金刚石表面; 在试样的整个表面上形成电极膜; 并除去掩模，从而形成电极的指定图案。 通过该方法，可以形成对于电子器件的金刚石和金刚石膜具有高粘附性的电极。