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公开(公告)号：US20240240354A1
公开(公告)日：2024-07-18
申请号：US18412905
申请日：2024-01-15
申请人： Plasmability, LLC
发明人： Robert J. Basnett , William Holber
CPC分类号： C30B25/20 , C30B25/10 , C30B25/186 , C30B29/04
摘要： A method of growing personalized single crystal diamond includes providing a seed diamond material. Diamond is grown on the seed diamond material to a mass of greater than 0.1 gram with an initial finished surface. A process gas is provided that contains at least some carbon from a deceased or living being or inanimate object. A thin film of diamond is grown on top of the initial finished surface to form a second finished surface by using chemical vapor deposition with the process gas.
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公开(公告)号：US12037703B2
公开(公告)日：2024-07-16
申请号：US17332601
申请日：2021-05-27
发明人： Dale Vince
IPC分类号： C23C16/27 , B28D5/00 , C01B32/26 , C12P5/02 , C25B1/04 , C25B3/25 , C25B9/73 , C25B15/08 , C30B25/10 , C30B25/20 , C30B29/04 , C30B35/00 , C01B32/50
CPC分类号： C30B29/04 , B28D5/00 , C01B32/26 , C12P5/023 , C25B1/04 , C25B3/25 , C25B9/73 , C25B15/08 , C30B25/105 , C30B25/205 , C30B35/007 , C01B32/50 , Y02E50/30 , Y02E60/36
摘要： A method of producing a synthetic diamond is disclosed. The method includes (a) capturing carbon dioxide from the atmosphere; (b) conducting electrolysis of water to provide hydrogen; (c) reacting the carbon dioxide obtained from step (a) with the hydrogen obtained from step (b) to produce methane; and (d) using the hydrogen obtained from step (b) and the methane obtained from step (c) to produce a synthetic diamond by chemical vapor deposition (CVD).
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公开(公告)号：US12027440B2
公开(公告)日：2024-07-02
申请号：US17609919
申请日：2020-04-17
IPC分类号： H01L23/373 , C30B29/04 , C30B29/06 , C30B29/16 , C30B33/06
CPC分类号： H01L23/3732 , C30B29/04 , C30B29/06 , C30B29/16 , C30B33/06
摘要： A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O—C bonding of at least some C atoms of the (111) surface of the diamond crystal base.
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公开(公告)号：US12024792B2
公开(公告)日：2024-07-02
申请号：US16090154
申请日：2018-03-29
申请人： Orbray Co., Ltd.
发明人： Seongwoo Kim , Daiki Fujii , Yutaka Kimura , Koji Koyama
CPC分类号： C30B29/04 , C30B25/02 , C30B25/183 , C30B29/60
摘要： As the diamond crystal, a diamond crystal in a bulk form including dislocation concentration regions is formed. An interval between each of the dislocation concentration regions is from 10 nm to 4000 nm. The crystal orientation of crystal main face at the surface of the diamond crystal is any one of (100), (111), or (110). An external shape of the diamond crystal in a surface direction is a rectangle, a circle, or a circle having an orientation flat plane. The rectangle is set to have a side length of not less than 8.0 mm. The circle is set to have a diameter of not less than 8.0 mm.
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5.发明公开公开(公告)号：US20240183070A1
公开(公告)日：2024-06-06
申请号：US18283805
申请日：2022-03-28
发明人： Hitoshi SUMIYA , Yoshiki NISHIBAYASHI , Yikang ZUO , Jin Hwa LEE , Minori TERAMOTO , Yutaka KOBAYASHI
摘要： A single-crystal diamond, wherein the single-crystal diamond has a nitrogen content based on the number of atoms of more than 0.1 ppm and 50 ppm or less, the single-crystal diamond has a boron content based on the number of atoms of 0.1 ppm or less, the single-crystal diamond has an average of a phase difference per unit thickness of 20 nm/mm or less, and the phase difference has a standard deviation of 10 nm/mm or less.
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公开(公告)号：US20240183069A1
公开(公告)日：2024-06-06
申请号：US18283795
申请日：2022-03-29
发明人： Yoshiki NISHIBAYASHI , Yikang ZUO , Jin Hwa LEE , Minori TERAMOTO , Yutaka KOBAYASHI , Hitoshi SUMIYA
摘要： A single-crystal diamond including: a growth striation parallel to a main growth surface; and a low-index crystal plane, wherein the growth striation in at least part of the single-crystal diamond has an off-cut angle with respect to the low-index crystal plane.
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公开(公告)号：US11931861B2
公开(公告)日：2024-03-19
申请号：US16417896
申请日：2019-05-21
发明人： Seong Gi Jeon , Sang Il Choi , Chang Su Jeong , Tae Gyu Kang
IPC分类号： B24B9/06 , B24D3/06 , B24D5/02 , B24D18/00 , C01B32/25 , C09G1/02 , C09K3/14 , C30B29/04 , C30B29/60
CPC分类号： B24B9/065 , B24D3/06 , B24D5/02 , B24D18/0072 , C01B32/25 , C09G1/02 , C09K3/1409 , C30B29/04 , C30B29/60 , C01P2004/61 , C01P2004/62
摘要： A grinding wheel includes a plurality of wheel tips. The plurality of wheel tips include a plurality of diamond abrasive grains and a bonding material mixed with the diamond abrasive grains. The plurality of diamond abrasive grains have a ratio of a length in a long axis direction to a width in a short axis direction of 1:2.5 to 1:3.5 and includes edges or vertices having a grinding angle of 90° or less.
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8.发明公开公开(公告)号：US20230383437A1
公开(公告)日：2023-11-30
申请号：US18321823
申请日：2023-05-23
发明人： Xiaobing Liu , Xiaoran Zhang
CPC分类号： C30B29/04 , C30B33/02 , C30B1/12 , G01R33/305
摘要： Preparations of a highly coherent diamond nitrogen vacancy (NV−) and a diamond anvil are provided. A graphite is used as a carbon source, a diamond is used as a crystal seed, aluminum/titanium is used as a nitrogen remover, and a single crystal diamond is synthesized under a high temperature and a high pressure, and high-pressure-high-temperature (HPHT) annealing is performed on the synthesized diamond; after the annealing, multiple NV−s are generated in and crystal orientation growth regions from scratch, while native NV−s in a crystal orientation growth region are disappeared; and the and crystal orientation growth regions do not contain defects related to ferromagnetic elements. The high-density and highly coherent NV−s are produced under nondestructive conditions, and the diamond anvil with controlled NV− depths are prepared to achieve a precise detection of the NV− at a pressure above 60 GPa.
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9.发明公开公开(公告)号：US20230294994A1
公开(公告)日：2023-09-21
申请号：US18186150
申请日：2023-03-18
发明人： Devi Shanker Misra
CPC分类号： C01B32/26 , C01B32/28 , C23C16/042 , C23C16/27 , C23C16/56 , C30B29/04 , C30B33/08 , C01P2004/61 , C01P2004/88 , C01P2006/80
摘要： A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.
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公开(公告)号：US20230250553A1
公开(公告)日：2023-08-10
申请号：US18134604
申请日：2023-04-14
发明人： Hitoshi NOGUCHI , Norio TOKUDA , Tsubasa MATSUMOTO
CPC分类号： C30B29/04 , C23C16/0281 , C23C16/277 , C23C16/279 , C30B25/183 , H01F1/40 , C30B25/18 , C30B25/20 , H01F10/10
摘要： A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10−5 volume % or more and 5.0×10−1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.
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