公开(公告)号：US20230257902A1

公开(公告)日：2023-08-17

申请号：US18123598

申请日：2023-03-20

申请人： TOYODA GOSEI CO., LTD.

发明人： Takayuki SATO ,  Miki MORIYAMA ,  Masateru YAMAZAKI ,  Taku FUJIMORI

IPC分类号： C30B19/02 ,  C30B29/40

CPC分类号： C30B19/02 ,  C30B29/406

摘要： A method for producing a Group III nitride semiconductor includes feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate, wherein the Group III nitride semiconductor is grown on the seed substrate, while controlling the surface modification weight ratio, which is defined as the ratio of the weight of Na including a portion surface-modified through oxidation or hydroxidation to the weight of Na when the surface thereof has no surface-modified portion as a reference weight, with Na serving as the flux.

公开(公告)号：US10032958B2

公开(公告)日：2018-07-24

申请号：US14742798

申请日：2015-06-18

申请人： NGK INSULATORS, LTD.

发明人： Shuuhei Higashihara ,  Makoto Iwai

IPC分类号： H01L33/00 ,  H01L33/32 ,  C30B19/12 ,  H01L33/20 ,  H01L21/02 ,  C30B9/10 ,  C30B19/02 ,  C30B29/40 ,  H01L33/16 ,  H01L33/12

CPC分类号： H01L33/32 ,  C30B9/10 ,  C30B19/02 ,  C30B19/12 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20

摘要： A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.

公开(公告)号：US20170372889A1

公开(公告)日：2017-12-28

申请号：US15699122

申请日：2017-09-08

申请人： NGK INSULATORS, LTD.

发明人： Masahiro SAKAI ,  Takashi YOSHINO

IPC分类号： H01L21/02 ,  C30B1/02 ,  C30B29/40 ,  C30B33/08

CPC分类号： H01L21/0254 ,  C30B1/023 ,  C30B19/02 ,  C30B19/12 ,  C30B29/406 ,  C30B33/06 ,  C30B33/08 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02694

摘要： A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and comprising a portion into which dislocation defects are introduced or an amorphous portion.

公开(公告)号：US09768352B2

公开(公告)日：2017-09-19

申请号：US15359813

申请日：2016-11-23

申请人： NGK INSULATORS, LTD.

发明人： Morimichi Watanabe ,  Jun Yoshikawa ,  Yoshitaka Kuraoka ,  Tsutomu Nanataki

IPC分类号： H01L33/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B28/04 ,  C30B29/40 ,  C30B29/60 ,  H01L33/16 ,  C30B9/00 ,  C30B25/20

CPC分类号： H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

公开(公告)号：US20170191186A1

公开(公告)日：2017-07-06

申请号：US15398319

申请日：2017-01-04

申请人： OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masayuki IMANISHI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  C30B19/12 ,  C30B19/02

CPC分类号： C30B25/186 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625

摘要： There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

公开(公告)号：US09653649B2

公开(公告)日：2017-05-16

申请号：US14923598

申请日：2015-10-27

申请人： NGK INSULATORS, LTD.

发明人： Makoto Iwai ,  Masahiro Sakai ,  Katsuhiro Imai ,  Yoshitaka Kuraoka

IPC分类号： H01L33/00 ,  C30B25/00 ,  H01L33/32 ,  C30B9/10 ,  C30B19/02 ,  C30B29/40 ,  H01L33/20 ,  C30B25/02 ,  H01L33/02

CPC分类号： H01L33/32 ,  C30B9/10 ,  C30B19/02 ,  C30B25/02 ,  C30B29/406 ,  H01L33/02 ,  H01L33/20

摘要： The maximum value of peak intensities of cathode luminescence of a wavelength corresponding to a band gap of gallium nitride and in a measured visual field of 0.1 mm×0.1 mm is 140 percent or higher of an average value of the peak intensities of the cathode luminescence, provided that the peak intensities of the cathode luminescence are measured on a surface of the gallium nitride substrate.

公开(公告)号：US20170081780A1

公开(公告)日：2017-03-23

申请号：US15365316

申请日：2016-11-30

申请人： Toyoda Gosei Co., Ltd.

发明人： Seiji NAGAI ,  Miki MORIYAMA ,  Shohei KUMEGAWA ,  Shiro YAMAZAKI

IPC分类号： C30B19/12 ,  H01L21/78 ,  C30B29/40 ,  H01L21/02 ,  C30B9/06 ,  C30B19/04

CPC分类号： C30B19/12 ,  C30B9/06 ,  C30B9/10 ,  C30B19/02 ,  C30B19/04 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/7806

摘要： A method for producing a Group III nitride semiconductor single crystal, includes forming a mask layer on an underlayer, to thereby form a seed crystal in which a portion of the underlayer is covered with the mask layer and in which the remaining portion of the underlayer is not covered with the mask layer, etching the remaining portion, and growing a Group III nitride semiconductor single crystal on the seed crystal.

公开(公告)号：US20170073839A1

公开(公告)日：2017-03-16

申请号：US15123556

申请日：2015-02-26

申请人： OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masashi ISEMURA ,  Akira USUI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B29/40 ,  C30B19/06 ,  C30B25/18 ,  C30B25/20 ,  C30B33/00 ,  B28D5/00 ,  H01L21/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  C30B19/02 ,  H01L21/02

CPC分类号： C30B29/406 ,  B28D5/00 ,  C30B19/02 ,  C30B19/061 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/7813 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3013 ,  H01S2304/06

摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

摘要翻译： 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。

公开(公告)号：US09464367B2

公开(公告)日：2016-10-11

申请号：US14474924

申请日：2014-09-02

申请人： Hirokazu Iwata

发明人： Hirokazu Iwata

IPC分类号： C30B29/40 ,  C30B9/10 ,  H01B1/06 ,  C30B9/00 ,  C30B29/38 ,  C01B21/06

CPC分类号： C30B29/406 ,  C01B21/0632 ,  C30B9/00 ,  C30B9/10 ,  C30B19/02 ,  C30B19/12 ,  C30B29/38 ,  C30B29/403 ,  H01B1/06 ,  H01L33/0075 ,  Y10T117/1068

摘要： A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

摘要翻译： 制造n型III族氮化物单晶的方法包括将至少包含III族元素，碱金属和氧化硼的物质的原料放入反应容器中; 通过将反应容器加热至氧化硼的熔点来熔化氧化硼; 通过将反应容器加热至III族氮化物的晶体生长温度，在反应容器中形成包含III族元素，碱金属和氧化硼的混合熔体; 通过使含氮气体与混合熔体接触将氮气混合到混合熔体中; 并且从溶解在混合熔体中的氧化硼中的III族元素，氮和氧生长出掺杂有氧作为供体的n型III族氮化物单晶。

公开(公告)号：US20160130723A1

公开(公告)日：2016-05-12

申请号：US14891936

申请日：2014-01-23

申请人： XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCIENCES

发明人： Shilie PAN ,  Zhaohui CHEN

IPC分类号： C30B19/02 ,  C30B29/22 ,  C01B35/12 ,  C30B19/12

CPC分类号： G02F1/3551 ,  C01B35/126 ,  C30B9/08 ,  C30B15/00 ,  C30B19/02 ,  C30B19/12 ,  C30B29/10 ,  C30B29/22

摘要： The present invention relates to a barium tetraborate compound and a barium tetraborate non-linear optical crystal, and a preparation method and use thereof, wherein the chemical formulae of the barium tetraborate compound and the non-linear optical crystal thereof are both BaB4O7, with a molecular weight of 292.58; the barium tetraborate non-linear optical crystal has a non-centrosymmetric structure, which belongs to a hexagonal system, and has a space group P65 and lattice parameters of a=6.7233(6) Å, c=18.776(4) Å, V=735.01(17) Å3, and Z=6, wherein the powder frequency-doubled effect thereof is two times that of KDP (KH2PO4), and the ultraviolet cut-off edge is lower than 170 nm. The barium tetraborate compound is synthesised by a solid-phase reaction method; the barium tetraborate non-linear optical crystal is grown by a high-temperature molten solution method; and the crystal has a moderate mechanical hardness, is easy to cut, polish and store, and is widely applicable in the non-linear optics of a double-frequency doubling generator, an upper frequency converter, a lower frequency converter or an optical parameter oscillator etc.

摘要翻译： 本发明涉及四硼酸钡化合物和四硼酸钡非线性光学晶体及其制备方法和用途，其中四硼酸钡化合物及其非线性光学晶体的化学式均为BaB4O7，其中 分子量292.58; 四硼酸钡非线性光学晶体具有属于六方晶系的非中心对称结构，具有空间群P65和晶格参数a = 6.7233（6），c = 18.776（4），V = 735.01（17）Å3和Z = 6，其中粉末倍频效应是KDP（KH 2 PO 4）的两倍，紫外线截止边缘低于170nm。 四硼酸钡化合物通过固相反应法合成; 通过高温熔融溶液法生长四硼酸钡非线性光学晶体; 并且晶体具有中等的机械硬度，易于切割，抛光和存储，并且广泛应用于双倍频发生器，上变频器，下变频器或光参数振荡器的非线性光学器件 等等