公开(公告)号：US09222199B2

公开(公告)日：2015-12-29

申请号：US12748515

申请日：2010-03-29

Applicant: Seiji Sarayama ,  Hirokazu Iwata

Inventor： Seiji Sarayama ,  Hirokazu Iwata

IPC: C30B35/00 ,  C30B29/40 ,  C30B9/10

CPC classification number: C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1064

Abstract: A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.

Abstract translation: 用于制造III族氮化物晶体的晶体制造装置包括：保持包含碱金属和III族金属的混合熔融液的坩埚; 将坩埚容纳在反应容器中的反应容器; 用反应容器加热坩埚的加热装置; 保持容器，其具有能够打开和关闭的盖子，将反应容器和加热装置容纳在容纳容器中; 容纳保持容器在密封容器中的密封容器，具有能够打开保持容器的盖以将源材料供应到坩埚中并在密封状态下取出制造的GaN晶体的操作装置，并且关闭盖 保持容器密封在密封容器中，密封容器包括惰性气体气氛或氮气氛; 以及用于通过每个容器向混合的熔融液体供给氮气的气体供给装置。

公开(公告)号：US08475593B2

公开(公告)日：2013-07-02

申请号：US13170431

申请日：2011-06-28

Applicant: Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

Inventor： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

IPC: C30B9/00 ,  C30B11/00

CPC classification number: C30B9/10 ,  C30B17/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024

Abstract: In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

Abstract translation: 在晶体制备装置中，坩埚保持含有碱金属和III族金属的混合熔融金属。 容器具有与混合熔融金属接触的容器空间，并且在容器空间和容器外部之间保持熔融碱金属，熔融碱金属与容器空间接触。 气体供给装置向容器空间供给氮气。 加热装置将坩埚加热至晶体生长温度。 提供了晶体制备装置，使得从熔融碱金属蒸发的碱金属的蒸汽压基本上等于从混合的熔融金属蒸发的碱金属的蒸气压。

公开(公告)号：US08194266B2

公开(公告)日：2012-06-05

申请号：US12333621

申请日：2008-12-12

Applicant: Tatsuya Miyadera ,  Kenji Asuwa ,  Izumi Kinoshita ,  Hiroaki Ikeda ,  Tatsuya Ozaki ,  Yasuo Matsuyama ,  Hirokazu Iwata

Inventor： Tatsuya Miyadera ,  Kenji Asuwa ,  Izumi Kinoshita ,  Hiroaki Ikeda ,  Tatsuya Ozaki ,  Yasuo Matsuyama ,  Hirokazu Iwata

IPC: G06F3/12 ,  G06K15/00

CPC classification number: G06K15/129 ,  G03G15/0131 ,  G03G15/5058 ,  G03G2215/00059 ,  G03G2215/0141 ,  G03G2215/0161 ,  G06K15/1219

Abstract: A positional error detection method forms, on a belt which is transported in a transport direction, positional error detection marks for detecting a positional error between image positions of first and second colors, detects the positional error detection marks on the belt, and computes the positional error based on the detected positional error detection marks. The positional error detection marks include first and second marks which are inclined in mutually opposite directions with respect to the transport direction, and third marks which are perpendicular to the transport direction.

Abstract translation: 位置误差检测方法在传送方向上传送的带上形成用于检测第一和第二颜色的图像位置之间的位置误差的位置误差检测标记，检测带上的位置错误检测标记，并计算位置 基于检测到的位置错误检测标记的错误。 位置误差检测标记包括相对于输送方向相互相反的方向倾斜的第一和第二标记以及与输送方向垂直的第三标记。

公开(公告)号：US20120085279A1

公开(公告)日：2012-04-12

申请号：US13313359

申请日：2011-12-07

Applicant: Seiji SARAYAMA ,  Hirokazu Iwata ,  Akihiro Fuse

Inventor： Seiji SARAYAMA ,  Hirokazu Iwata ,  Akihiro Fuse

IPC: C30B9/00

CPC classification number: C30B9/12 ,  C30B9/00 ,  C30B9/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/062 ,  C30B19/106 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092

Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Abstract translation: 晶体生长装置包括保持含有碱金属和III族金属的熔融混合物的反应容器，向暴露于反应容器内的熔融混合物的容器空间供给氮源气体的供气装置，加热单元 熔融混合物至晶体生长温度，以及支撑单元，其在熔融混合物内支撑III族氮化物晶体的籽晶。

公开(公告)号：US20120049137A1

公开(公告)日：2012-03-01

申请号：US13220939

申请日：2011-08-30

Applicant: Hirokazu Iwata

Inventor： Hirokazu Iwata

IPC: H01B1/06 ,  C30B9/00

CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B9/00 ,  C30B9/10 ,  C30B19/02 ,  C30B19/12 ,  C30B29/38 ,  C30B29/403 ,  H01B1/06 ,  H01L33/0075 ,  Y10T117/1068

Abstract: A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

Abstract translation: 制造n型III族氮化物单晶的方法包括将至少包含III族元素，碱金属和氧化硼的物质的原料放入反应容器中; 通过将反应容器加热至氧化硼的熔点来熔化氧化硼; 通过将反应容器加热至III族氮化物的晶体生长温度，在反应容器中形成包含III族元素，碱金属和氧化硼的混合熔体; 通过使含氮气体与混合熔体接触将氮气混合到混合熔体中; 并且从溶解在混合熔体中的氧化硼中的III族元素，氮和氧生长出掺杂有氧作为供体的n型III族氮化物单晶。

公开(公告)号：US20110012235A1

公开(公告)日：2011-01-20

申请号：US12891504

申请日：2010-09-27

Applicant: Hirokazu Iwata ,  Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masato Aoki

Inventor： Hirokazu Iwata ,  Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masato Aoki

IPC: H01L29/20 ,  C01B21/06 ,  C01B21/072

CPC classification number: H01L29/7787 ,  C30B11/00 ,  C30B29/403 ,  C30B29/406 ,  H01L29/2003 ,  Y10T428/2982

Abstract: A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.

Abstract translation: 生长III族氮化物晶体的方法从溶解有碱金属，III族金属和氮的溶液中生长III族氮化物晶体，并且在该溶液中包含增加氮的溶解度的材料 解。

公开(公告)号：US07462238B2

公开(公告)日：2008-12-09

申请号：US11498841

申请日：2006-08-04

Applicant: Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

Inventor： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

IPC: C30B25/14

CPC classification number: C30B29/40 ,  C30B7/00 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

Abstract translation: 晶体生长装置包括在其容器空间中容纳含有碱金属和III族金属的熔融混合物的反应容器，通过其表面张力将金属熔体保持在通过其中的碱金属的蒸汽的路径中的多孔构件 与容器空间中的金属混合物接触逃逸到外部空间，多孔构件进一步向外部供给来自反应容器的氮源气体，并通过金属熔体通过在容器空间之间形成的压力差 反应容器和外部空间，以及将熔融混合物加热至晶体生长温度的加热装置。

公开(公告)号：US20080264331A1

公开(公告)日：2008-10-30

申请号：US11596250

申请日：2006-03-13

Applicant: Hirokazu Iwata ,  Seiji Sarayama ,  Minoru Fukuda ,  Tetsuya Takahashi ,  Akira Takahashi

Inventor： Hirokazu Iwata ,  Seiji Sarayama ,  Minoru Fukuda ,  Tetsuya Takahashi ,  Akira Takahashi

IPC: C30B15/00

CPC classification number: C30B19/02 ,  C30B9/00 ,  C30B15/00 ,  C30B15/32 ,  C30B17/00 ,  C30B19/06 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024 ,  Y10T117/1032

Abstract: A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.

Abstract translation: 一种用于在保持容器中的晶种上制造III族氮化物晶体的方法，其中容纳含有III族金属，碱金属和氮的熔体。 该制造方法包括以下步骤：使晶种与熔体接触，将晶种的环境设定为偏离晶体生长条件的第一状态，同时在所述晶种与所述晶种接触的状态下 熔融，增加熔体中的氮浓度，并且当熔体的氮浓度达到适于种植晶种的浓度时，将晶种的环境设定为适合晶体生长的第二状态。

公开(公告)号：US20070266928A1

公开(公告)日：2007-11-22

申请号：US11878125

申请日：2007-07-20

Applicant: Hirokazu Iwata ,  Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masato Aoki

Inventor： Hirokazu Iwata ,  Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masato Aoki

IPC: C30B1/04

CPC classification number: H01L29/7787 ,  C30B11/00 ,  C30B29/403 ,  C30B29/406 ,  H01L29/2003 ,  Y10T428/2982

Abstract: A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.

Abstract translation: 生长III族氮化物晶体的方法从溶解有碱金属，III族金属和氮的溶液中生长III族氮化物晶体，并且在该溶液中包含增加氮的溶解度的材料 解。

公开(公告)号：US07235913B2

公开(公告)日：2007-06-26

申请号：US11475815

申请日：2006-06-26

Applicant: Hirokazu Iwata

Inventor： Hirokazu Iwata

IPC: H01L41/08 ,  H03H9/19

CPC classification number: H03H9/0547 ,  H03H3/04 ,  H03H9/1021 ,  H03H9/17 ,  H03H2003/022 ,  H03H2003/0485

Abstract: In the case where an ultraminiature piezoelectric substrate, which has a resonating portion formed by making a concavity by etching in the surface of the piezoelectric substrate made of an anisotropic crystal material, is mass-produced by batch operation using a large-area piezoelectric substrate wafer, an annular portion surrounding each concavity is formed sufficiently thick to prevent cracking from occurring when the wafer is severed. A piezoelectric substrate 2 of an anisotropic piezoelectric crystal material has a thin resonating portion 4 and a thick annular portion 5 integrally surrounding the outer marginal edge of the resonating portion to form a concavity 3 in at least one of major surfaces of the substrate; the inner wall 5a of the annular portion in the one crystal orientation slopes gently more than the inner wall in the other crystal orientation perpendicular to said one crystal orientation, and the piezoelectric substrate is longer in said one crystal orientation than in the other crystal orientation.

Abstract translation: 在通过使用大面积压电基板晶片的批量操作来批量生产具有通过在由各向异性晶体材料制成的压电基板的表面中通过蚀刻形成凹陷而形成的谐振部分的超微压电基板的情况下 围绕每个凹部的环形部分形成得足够厚以防止当晶片断开时发生裂纹。 各向异性压电晶体材料的压电基片2具有薄的谐振部分4和一个围绕谐振部分的外边缘的厚的环形部分5，以在基片的至少一个主表面中形成凹陷3; 在一个晶体取向中的环形部分的内壁5a在垂直于所述一个晶体取向的另一个晶体取向中比内壁平缓地倾斜，并且压电基片在所述一个晶体取向上比在另一个晶体取向上更长 。