公开(公告)号：US11955251B2

公开(公告)日：2024-04-09

申请号：US17233845

申请日：2021-04-19

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Takashi Sakurada ,  Tomohiro Kawase

IPC分类号： C30B29/42 ,  C22F1/16 ,  C30B11/00 ,  C30B33/00 ,  C30B33/02 ,  H01B1/02

CPC分类号： H01B1/02 ,  C22F1/16 ,  C30B11/00 ,  C30B29/42 ,  C30B33/00 ,  C30B33/02 ,  Y10T428/24355

摘要： An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10−2 cm2 or at least 1×10−3 cm2.

公开(公告)号：US11730857B2

公开(公告)日：2023-08-22

申请号：US17195997

申请日：2021-03-09

申请人： University of Cincinnati

发明人： Vesselin N. Shanov ,  Vibhor Chaswal ,  Pravahan Salunke ,  Madhura Joshi ,  Guangqi Zhang ,  Mark J. Schulz ,  Sergey N. Yarmolenko ,  Doug Nienaber

IPC分类号： C30B11/00 ,  C30B15/00 ,  A61L27/04 ,  A61L27/50 ,  A61L31/02 ,  A61L31/14 ,  A61B17/80 ,  A61B17/86 ,  C30B29/02 ,  C30B13/00 ,  A61L27/58 ,  C30B25/00 ,  C30B23/00 ,  A61F2/30 ,  C25D11/30 ,  C30B11/02 ,  C30B33/00 ,  A61B17/00 ,  A61F2/08

CPC分类号： A61L27/047 ,  A61B17/80 ,  A61B17/86 ,  A61F2/3099 ,  A61L27/58 ,  A61L31/02 ,  A61L31/022 ,  A61L31/148 ,  C25D11/30 ,  C30B11/00 ,  C30B11/02 ,  C30B13/00 ,  C30B15/00 ,  C30B23/00 ,  C30B25/00 ,  C30B29/02 ,  C30B33/005 ,  A61B2017/00526 ,  A61F2002/0858

摘要： A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

公开(公告)号：US11685860B2

公开(公告)日：2023-06-27

申请号：US17441920

申请日：2020-10-30

申请人： GRIREM ADVANCED MATERIALS CO., LTD. ,  GRIREM HI-TECH CO., LTD. ,  Rare Earth Functional Materials (Xiong 'an) Innovation Center Co., Ltd.

发明人： Jinqiu Yu ,  Liang Luo ,  Chengpeng Diao ,  Lei Cui ,  Hao Wu ,  Huaqiang He

IPC分类号： C30B11/00 ,  C09K11/77 ,  G01T1/36

CPC分类号： C09K11/7719 ,  C30B11/00 ,  G01T1/362

摘要： A rare earth halide scintillation material the chemical formula of the material being CeBr3+x, wherein 0.0001x0.1. The rare earth halide scintillation material has excellent scintillation properties including high light output, high energy resolution, and fast decay.

公开(公告)号：US20190107636A1

公开(公告)日：2019-04-11

申请号：US16206545

申请日：2018-11-30

申请人： Saint-Gobain Cristaux Et Detecteurs

发明人： Vladimir OUSPENSKI ,  Samuel BLAHUTA ,  Raphaël HUCHET ,  Julien LEJAY

IPC分类号： G01T1/202 ,  C30B15/04 ,  C30B11/04 ,  C30B11/02 ,  C30B11/00 ,  C09K11/77 ,  C30B29/12 ,  C30B15/00

CPC分类号： G01T1/2023 ,  C09K11/77 ,  C09K11/7766 ,  C09K11/7773 ,  C30B11/00 ,  C30B11/02 ,  C30B11/04 ,  C30B15/00 ,  C30B15/04 ,  C30B29/12 ,  G01T1/20 ,  G01T1/202

摘要： The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.

公开(公告)号：US20180233654A1

公开(公告)日：2018-08-16

申请号：US15955687

申请日：2018-04-18

申请人： NIPPON KOSHUHA STEEL Co., Ltd

发明人： Katsuya IMAI

IPC分类号： H01L41/12 ,  H01L41/47 ,  H01L41/20 ,  C22C38/00 ,  C30B11/00 ,  C30B29/52

CPC分类号： H01L41/12 ,  C22C38/00 ,  C22C38/002 ,  C22C2202/02 ,  C30B11/00 ,  C30B29/52 ,  H01L41/20 ,  H01L41/47

摘要： The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations.The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

公开(公告)号：US09916958B1

公开(公告)日：2018-03-13

申请号：US14608777

申请日：2015-01-29

申请人： Harish B. Bhandari ,  Vivek V. Nagarkar ,  Olena E. Ovechkina ,  Henry J. Frisch ,  Klaus Attenkofer ,  John M. Smedley

发明人： Harish B. Bhandari ,  Vivek V. Nagarkar ,  Olena E. Ovechkina ,  Henry J. Frisch ,  Klaus Attenkofer ,  John M. Smedley

IPC分类号： H01J9/00 ,  H01J9/12 ,  H01J1/34 ,  H02S50/15 ,  G01N21/63 ,  C23C14/02 ,  C23C14/16 ,  C23C14/54 ,  C23C14/34

CPC分类号： H01J9/12 ,  C23C14/0036 ,  C23C14/06 ,  C23C14/3414 ,  C23C14/548 ,  C30B11/00 ,  H01J1/34 ,  H02S50/15

摘要： Methods and systems for fabricating a film, such as, for example, a photocathode, having a tailored band structure and thin-film components that can be tailored for specific applications, such as, for example photocathode having a high quantum efficiency, and simple components fabricated by those methods.

公开(公告)号：US09816161B2

公开(公告)日：2017-11-14

申请号：US14419765

申请日：2013-07-30

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  MITSUBISHI HEAVY INDUSTRIES, LTD.

发明人： Kyoko Kawagishi ,  Hiroshi Harada ,  Tadaharu Yokokawa ,  Yutaka Koizumi ,  Toshiharu Kobayashi ,  Masao Sakamoto ,  Michinari Yuyama ,  Masaki Taneike ,  Ikuo Okada ,  Sachio Shimohata ,  Hidetaka Oguma ,  Ryota Okimoto ,  Keizo Tsukagoshi ,  Yoshitaka Uemura ,  Junichiro Masada ,  Shunsuke Torii

IPC分类号： C22F1/10 ,  C22C19/05 ,  F01D5/28 ,  C30B29/52 ,  C30B11/00 ,  C30B33/02

CPC分类号： C22C19/057 ,  C22C19/056 ,  C22F1/10 ,  C30B11/00 ,  C30B29/52 ,  C30B33/02 ,  F01D5/28 ,  F05D2300/132 ,  F05D2300/175 ,  F05D2300/607 ,  Y02T50/671

摘要： Provided is a Ni-based single crystal superalloy containing 6% by mass or more and 12% by mass or less of Cr, 0.4% by mass or more and 3.0% by mass or less of Mo, 6% by mass or more and 10% by mass or less of W, 4.0% by mass or more and 6.5% by mass or less of Al, 0% by mass or more and 1% by mass or less of Nb, 8% by mass or more and 12% by mass or less of Ta, 0% by mass or more and 0.15% by mass or less of Hf, 0.01% by mass or more and 0.2% by mass or less of Si, and 0% by mass or more and 0.04% by mass or less of Zr, and optionally containing at least one element selected from B, C, Y, La, Ce, and V, with a balance being Ni and inevitable impurities.

公开(公告)号：US09770758B2

公开(公告)日：2017-09-26

申请号：US15219921

申请日：2016-07-26

申请人： United Technologies Corporation

发明人： JinQuan Xu

IPC分类号： B22D23/06 ,  B22D27/04 ,  B33Y10/00 ,  B33Y40/00 ,  B33Y80/00 ,  B22C9/10 ,  B22C9/22 ,  B22D29/00 ,  B22D25/02 ,  B22F3/105 ,  B22F3/24 ,  B22F5/04 ,  B23K15/00 ,  B23K26/342 ,  B23K26/70 ,  B23K37/00 ,  F01D5/00 ,  F01D5/12 ,  F01D9/04 ,  F02C7/22 ,  F23R3/00 ,  B23K101/00

CPC分类号： B22D27/045 ,  B22C9/02 ,  B22C9/04 ,  B22C9/10 ,  B22C9/108 ,  B22C9/12 ,  B22C9/22 ,  B22D23/06 ,  B22D25/02 ,  B22D29/001 ,  B22F3/1055 ,  B22F3/24 ,  B22F5/007 ,  B22F5/009 ,  B22F5/04 ,  B22F2003/248 ,  B22F2998/10 ,  B23K1/0018 ,  B23K9/04 ,  B23K9/167 ,  B23K15/0046 ,  B23K15/0086 ,  B23K20/00 ,  B23K26/34 ,  B23K26/342 ,  B23K26/70 ,  B23K31/02 ,  B23K37/00 ,  B23K2101/001 ,  B23P6/005 ,  B23P6/007 ,  B23P6/045 ,  B33Y10/00 ,  B33Y40/00 ,  B33Y80/00 ,  C30B11/00 ,  C30B11/003 ,  C30B21/02 ,  C30B29/52 ,  F01D5/005 ,  F01D5/12 ,  F01D5/18 ,  F01D5/186 ,  F01D5/187 ,  F01D9/04 ,  F02C7/222 ,  F05D2220/32 ,  F05D2230/21 ,  F05D2230/233 ,  F05D2230/234 ,  F05D2230/235 ,  F05D2230/238 ,  F05D2230/30 ,  F05D2230/80 ,  F05D2240/122 ,  F05D2240/304 ,  F05D2260/202 ,  F05D2260/204 ,  F05D2300/175 ,  F05D2300/20 ,  F05D2300/606 ,  F05D2300/608 ,  F23R3/002 ,  Y02P10/292 ,  Y02P10/295

摘要： A method of manufacturing a replacement body for a component is provided. The method includes the steps of: a) additively manufacturing a crucible for casting of the replacement body; b) solidifying a metal material within the crucible to form a directionally solidified microstructure within the replacement body; and c) removing the crucible to reveal the directionally solidified replacement body.

公开(公告)号：US20170197841A1

公开(公告)日：2017-07-13

申请号：US15287062

申请日：2016-10-06

申请人： Milwaukee Silicon, LLC

发明人： M. Robert Showalter

IPC分类号： C01B33/037 ,  B01D21/00 ,  B01J10/00

CPC分类号： C01B33/037 ,  B01D15/02 ,  B01D21/0084 ,  B01J8/0278 ,  B01J8/1881 ,  B01J8/20 ,  B01J8/24 ,  B01J10/005 ,  B01J2208/00548 ,  B01J2208/00752 ,  B01J2208/00893 ,  C01P2006/80 ,  C30B11/00 ,  F27B14/06

摘要： The present disclosure provides devices and systems that utilize concurrent and countercurrent exchange platforms to produce purified silicon.

公开(公告)号：US09678223B2

公开(公告)日：2017-06-13

申请号：US14239366

申请日：2012-08-17

申请人： Daisuke Totsuka ,  Susumu Matsumoto ,  Akira Yoshikawa ,  Takayuki Yanagida

发明人： Daisuke Totsuka ,  Susumu Matsumoto ,  Akira Yoshikawa ,  Takayuki Yanagida

IPC分类号： C09K11/74 ,  G01T1/202 ,  C30B29/12 ,  C09K11/02 ,  G21K4/00 ,  C30B11/00 ,  C30B15/00

CPC分类号： G01T1/2023 ,  C09K11/025 ,  C09K11/7435 ,  C30B11/00 ,  C30B15/00 ,  C30B29/12 ,  G21K4/00 ,  G21K2004/06

摘要： An afterglow property of cesium iodide:thallium (CsI:Tl), in which CsI is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including CsI (cesium iodide), as a host material, and thallium (Tl), as a luminescent center, with bismuth (Bi).