公开(公告)号：US12104278B2

公开(公告)日：2024-10-01

申请号：US17611138

申请日：2020-03-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa Honke ,  Kyoko Okita

IPC: C30B29/06 ,  C30B29/36 ,  C30B29/64 ,  C30B33/00 ,  H01L21/02 ,  H01L29/16 ,  H01L29/36 ,  C09G1/02 ,  C09G1/04 ,  C30B23/00 ,  C30B23/02

CPC classification number: C30B29/36 ,  C30B29/06 ,  C30B33/00 ,  H01L21/02021 ,  H01L21/02024 ,  H01L21/02052 ,  H01L29/1608 ,  H01L29/36 ,  C09G1/02 ,  C09G1/04 ,  C30B23/00 ,  C30B23/02 ,  C30B23/025 ,  C30B29/64 ,  H01L21/02019 ,  H01L21/02378 ,  H01L21/02529 ,  Y10T428/219 ,  Y10T428/24355 ,  Y10T428/24777 ,  Y10T428/24942 ,  Y10T428/31

Abstract: A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.

公开(公告)号：US12084388B2

公开(公告)日：2024-09-10

申请号：US18096568

申请日：2023-01-13

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chih-Hsing Wang ,  Cheng-Jung Ko ,  Chuen-Ming Gee ,  Chih-Wei Kuo ,  Hsueh-I Chen ,  Jun-Bin Huang ,  Ying-Tsung Chao

IPC: C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/64 ,  C04B35/645 ,  C30B23/00 ,  C30B35/00

CPC classification number: C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C04B2235/3839 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/661 ,  C30B23/00 ,  C30B35/002

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

公开(公告)号：US20240068128A1

公开(公告)日：2024-02-29

申请号：US18269888

申请日：2022-01-25

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

Inventor： Daisuke NAKAMURA

IPC: C30B35/00 ,  C30B23/00

CPC classification number: C30B35/002 ,  C30B23/00

Abstract: A heat-resistant member comprises: a substrate made of isotropic graphite; a single-layered dense low-emissivity layer covering part of surfaces of the substrate; and a single-layered or multi-layered dense high-emissivity layer covering all or part of the remaining surfaces of the substrate. The dense low-emissivity layer has an outermost surface with an emissivity of εA, and has a relative density of 97% or more. The dense high-emissivity layer has an outermost surface with an emissivity of εB (>εA), and has a high-density region with a relative density of 97% or more in any portion between the outermost surface and the interface with the substrate. Preferably, an emissivity difference (εB−εA) is 0.1 or more.

公开(公告)号：US20180183007A1

公开(公告)日：2018-06-28

申请号：US15738214

申请日：2016-06-21

Applicant: John N. MAGNO ,  Gene C. KOCH

Inventor： John N. MAGNO ,  Gene C. KOCH

IPC: H01L51/52

CPC classification number: H01L51/5265 ,  C30B23/00 ,  C30B29/16 ,  C30B29/54 ,  G02B1/02 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5221 ,  H01L51/5275 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/533 ,  H01L2251/558

Abstract: A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies periodically such as distributed Bragg reflectors, aligned nematic liquid crystals, and holographically recorded gratings.

公开(公告)号：US09985196B2

公开(公告)日：2018-05-29

申请号：US15319617

申请日：2015-06-11

Applicant: ULVAC, INC.

Inventor： Hiroki Kobayashi ,  Mitsunori Henmi ,  Mitsutaka Hirose ,  Kazuya Tsukagoshi ,  Isao Kimura ,  Koukou Suu

IPC: B32B15/04 ,  H01L41/187 ,  C01G25/02 ,  C01G53/04 ,  C23C14/14 ,  C23C14/08 ,  H01L41/047 ,  H01L41/319 ,  H01L41/316

CPC classification number: H01L41/1876 ,  C01G25/00 ,  C01G25/02 ,  C01G53/00 ,  C01G53/04 ,  C23C14/024 ,  C23C14/025 ,  C23C14/08 ,  C23C14/088 ,  C23C14/14 ,  C23C14/3492 ,  C30B23/00 ,  C30B29/22 ,  C30B29/32 ,  H01L41/0477 ,  H01L41/316 ,  H01L41/319

Abstract: A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

公开(公告)号：US09915011B2

公开(公告)日：2018-03-13

申请号：US12592747

申请日：2009-12-01

Applicant: Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

Inventor： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC: B32B5/00 ,  C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/40 ,  C30B33/02

CPC classification number: C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/403 ,  C30B33/02 ,  Y10T428/24355

Abstract: The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

公开(公告)号：US20180066379A1

公开(公告)日：2018-03-08

申请号：US15593938

申请日：2017-05-12

Applicant: MELIOR INNOVATIONS, INC.

Inventor： Mark S. Land ,  Ashish P. Diwanji ,  Andrew R. Hopkins ,  Walter J. Sherwood ,  Douglas M. Dukes ,  Glenn Sandgren ,  Brian L. Benac

IPC: C30B23/00 ,  H01L21/02 ,  H01L29/66 ,  H01L29/16 ,  C30B29/06 ,  C30B29/36 ,  C30B23/02 ,  C08G77/50 ,  C08G77/20

CPC classification number: C30B23/00 ,  C01B32/956 ,  C04B35/56 ,  C04B35/5603 ,  C04B35/571 ,  C04B35/806 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/44 ,  C04B2235/48 ,  C04B2235/483 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/96 ,  C08G77/12 ,  C08G77/20 ,  C08G77/50 ,  C08G77/80 ,  C08L83/00 ,  C08L83/04 ,  C30B23/025 ,  C30B29/06 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66893

Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

公开(公告)号：US20170301366A1

公开(公告)日：2017-10-19

申请号：US15634671

申请日：2017-06-27

Applicant: National University of Singapore

Inventor： Jingsheng Chen ,  Kaifeng Dong ,  Ganping Ju ,  Yingguo Peng

IPC: G11B5/65 ,  G11B5/851 ,  G11B5/738

CPC classification number: G11B5/653 ,  C23C14/024 ,  C23C14/185 ,  C23C14/3464 ,  C23C14/352 ,  C30B23/00 ,  C30B29/16 ,  C30B29/52 ,  G11B5/65 ,  G11B5/73 ,  G11B5/7325 ,  G11B5/851

Abstract: A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

公开(公告)号：US09790619B2

公开(公告)日：2017-10-17

申请号：US13181167

申请日：2011-07-12

Applicant: Robert Tyler Leonard ,  Adrian Powell ,  Valeri F. Tsvetkov

Inventor： Robert Tyler Leonard ,  Adrian Powell ,  Valeri F. Tsvetkov

IPC: C30B23/02 ,  C30B29/36 ,  C30B23/00 ,  C30B33/00 ,  H01L21/324

CPC classification number: C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  C30B33/00 ,  H01L21/324 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1016 ,  Y10T428/21 ,  Y10T428/31

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

公开(公告)号：US09771666B2

公开(公告)日：2017-09-26

申请号：US14684754

申请日：2015-04-13

Applicant: Crystal IS, Inc.

Inventor： Robert T. Bondokov ,  Leo J. Schowalter ,  Kenneth Morgan ,  Glen A. Slack ,  Shailaja P. Rao ,  Shawn Robert Gibb

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/40

CPC classification number: C30B23/025 ,  C30B23/00 ,  C30B29/403 ,  Y10T428/2982

Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.