公开(公告)号：US11805700B2

公开(公告)日：2023-10-31

申请号：US16619871

申请日：2018-04-19

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Kenji Shibata ,  Kazutoshi Watanabe ,  Fumimasa Horikiri

IPC: H01L41/047 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H10N30/87 ,  H10N30/06 ,  H10N30/076 ,  H10N30/853

CPC classification number: H10N30/878 ,  H10N30/06 ,  H10N30/076 ,  H10N30/8542

Abstract: There is provided a laminated substrate having a piezoelectric film, including: a substrate; a first electrode film provided on the substrate; and a piezoelectric film provided on the first electrode film, wherein an oxide film containing an oxide represented by a composition formula of RuOx or IrOx, is provided on the piezoelectric film.

公开(公告)号：US20230083830A1

公开(公告)日：2023-03-16

申请号：US17943600

申请日：2022-09-13

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： AKIHIKO TESHIGAHARA ,  TETSUYA ENOMOTO ,  HIDEO YAMADA

IPC: H01L41/08 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319

Abstract: A piezoelectric film laminated body includes a metal film, an amorphous film, and a scandium aluminum nitride film. The amorphous film has an insulation property and is disposed on the metal film. The scandium aluminum nitride film is disposed on the amorphous film and is in contact with a surface of the amorphous film.

公开(公告)号：US11601110B2

公开(公告)日：2023-03-07

申请号：US16356333

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Ran Hee Shin ,  Tae Kyung Lee ,  Je Hong Kyoung ,  Jin Suk Son ,  Hwa Sun Lee ,  Sung Sun Kim

IPC: H03H9/13 ,  H01L41/047 ,  H01L41/187 ,  H03H9/02 ,  H01L41/316 ,  H03H9/17 ,  C22C21/00 ,  H03H3/02 ,  H03H9/54

Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.

公开(公告)号：US20230032638A1

公开(公告)日：2023-02-02

申请号：US17967556

申请日：2022-10-17

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC: H01L41/319 ,  C23C14/54 ,  C23C14/06 ,  H01L41/08 ,  C23C14/35 ,  H01L41/187 ,  H01L41/047 ,  H01L41/316

Abstract: A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

公开(公告)号：US20220352456A1

公开(公告)日：2022-11-03

申请号：US17811222

申请日：2022-07-07

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H01L41/316 ,  H01L41/18 ,  H01L41/29 ,  H01L41/273 ,  H03H3/02

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

公开(公告)号：US11411169B2

公开(公告)日：2022-08-09

申请号：US16742202

申请日：2020-01-14

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H01L41/316 ,  H01L41/18 ,  H01L41/29 ,  H01L41/273 ,  H03H3/02

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

公开(公告)号：US11411162B2

公开(公告)日：2022-08-09

申请号：US16503494

申请日：2019-07-04

Applicant: SAE Magnetics (H.K.) Ltd.

Inventor： Wei Xiong ,  Atsushi Iijima

IPC: H01L41/047 ,  H01L41/09 ,  H01L41/18 ,  H01L41/316 ,  G11B5/48

Abstract: A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The piezoelectric-material film includes a size larger than the upper electrode film, a riser end-surface and step-surface formed on a top-surface of the upper electrode film side. The riser end-surface connects smoothly with a peripheral end-surface of the upper electrode film and vertically intersects with the top-surface. The step-surface intersects vertically with the riser end-surface. The lower piezoelectric-material protective-film, and the upper piezoelectric-material protective-film are formed with alloy material including Fe as main ingredient and having Co and Mo, by Ion beam deposition.

公开(公告)号：US20220238791A1

公开(公告)日：2022-07-28

申请号：US17614706

申请日：2020-06-23

Applicant: Robert Bosch GmbH

Inventor： Daniel Monteiro Diniz Reis ,  Daniel Pantel ,  Frank Schatz ,  Jochen Tomaschko ,  Mathias Mews ,  Timo Schary

IPC: H01L41/187 ,  H01L41/316 ,  H01L41/08

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times τ1 and τ2, and generate the maximum changes in barrier height δΦ1 and δΦ2 at the electrodes. τ1 and δΦ1 are associated with the first defect type, and τ2 and δΦ2 are associated with the second defect type. τ1

公开(公告)号：US20220231219A1

公开(公告)日：2022-07-21

申请号：US17612677

申请日：2020-06-23

Applicant: Robert Bosch GmbH

Inventor： Daniel Monteiro Diniz Reis ,  Daniel Pantel ,  Frank Schatz ,  Jochen Tomaschko ,  Mathias Mews ,  Timo Schary

IPC: H01L41/09 ,  H01L41/316 ,  H01L41/187 ,  H01L41/047 ,  H01L41/08

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.

公开(公告)号：US20220157901A1

公开(公告)日：2022-05-19

申请号：US17486754

申请日：2021-09-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yuju CHEN

IPC: H01L27/32 ,  B06B1/06 ,  H01L41/047 ,  H01L41/187 ,  H01L41/257 ,  H01L41/316 ,  H01L41/332 ,  H01L51/52 ,  H01L51/56

Abstract: A display module and a fabrication method thereof, and a display device, and relates to the field of display technologies, to synchronously implement a display function and a surface tactile reproduction function. The display module includes: a base substrate, a plurality of piezoelectric structures positioned on a first side of the base substrate, and at least one isolation portion positioned on the first side of the base substrate and configured to separate any two adjacent piezoelectric structures. A pixel hole is arranged in at least one of three positions, i.e., a position of the piezoelectric structure, a position of the isolation portion, and a position between the piezoelectric structure and the isolation portion. The display module also includes a plurality of pixel structures, and each of the plurality of pixel structures is positioned in one of the pixel holes.