公开(公告)号：US20230345836A1

公开(公告)日：2023-10-26

申请号：US17886854

申请日：2022-08-12

申请人： Applied Materials, Inc.

发明人： Ming GAO ,  Lizhong SUN ,  Xiaodong YANG

IPC分类号： H01L41/319 ,  H01L41/316 ,  H01L41/08 ,  H01L41/083

CPC分类号： H01L41/319 ,  H01L41/316 ,  H01L41/0815 ,  H01L41/083

摘要： A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and depositing a piezoelectric film layer at a second temperature of less than 200 degrees Celsius. The piezoelectric film layer has a surface cone defect count of less than or equal to 2 per 100 microns2 of surface area of the piezoelectric film layer. In some embodiments, no vacuum breaks occur between depositions of the first seed layer, the intermediate film layer, the second seed layer, and the piezoelectric film layer.

公开(公告)号：US11785854B2

公开(公告)日：2023-10-10

申请号：US16762212

申请日：2018-11-09

申请人： I-PEX PIEZO SOLUTIONS INC.

发明人： Takeshi Kijima ,  Yasuaki Hamada

IPC分类号： H01L41/319 ,  H01L41/187 ,  C23C14/35 ,  C23C14/16 ,  C23C14/30 ,  C23C14/08 ,  H10N30/079 ,  H10N30/87 ,  H10N30/853 ,  H10N30/076 ,  H10N30/078

CPC分类号： H10N30/079 ,  C23C14/08 ,  C23C14/082 ,  C23C14/083 ,  C23C14/16 ,  C23C14/30 ,  C23C14/35 ,  H10N30/8554 ,  H10N30/87 ,  H10N30/076 ,  H10N30/078

摘要： A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

公开(公告)号：US20230113584A1

公开(公告)日：2023-04-13

申请号：US17938118

申请日：2022-10-05

申请人： SKYWORKS GLOBAL PTE. LTD.

发明人： Kezia Cheng ,  Kwang Jae Shin ,  Alexandre Augusto Shirakawa ,  Stefan Bader

IPC分类号： H01L41/319 ,  H01L41/08 ,  H01L41/187 ,  H01L41/316 ,  H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/25 ,  H03H9/64

摘要： A piezoelectric film on a substrate is provided comprising an aluminum nitride (AlN) layer, and a Al1-x(J)xN compound layer comprising a graded section with a lower (J) composition, x, adjacent to the AlN layer and a higher (J) composition, x, located away from the AlN layer, the said (J) being a singular element or a binary compound. A method for forming such a piezoelectric film is also provided. A surface acoustic wave resonator comprising such a piezoelectric film, a surface acoustic wave filter comprising such a piezoelectric film, a bulk acoustic wave resonator comprising such a piezoelectric film, and a bulk acoustic wave filter comprising such a piezoelectric film are also provided.

公开(公告)号：US11435242B2

公开(公告)日：2022-09-06

申请号：US17226902

申请日：2021-04-09

申请人： Sentons Inc.

发明人： Samuel W. Sheng ,  Shih-Ming Shih ,  Yenyu Hsieh ,  Shirish A. Altekar

IPC分类号： G01L1/18 ,  G06F3/045 ,  G06F3/043 ,  G06F3/041 ,  G01L9/06 ,  G01L5/00 ,  G01P15/12 ,  G01L9/08 ,  H03K17/96 ,  H01L41/319 ,  G06F1/16

摘要： A physical disturbance sensor includes a plurality of piezoresistive elements configured in a resistive bridge configuration. A signal transmitter is electrically connected to the physical disturbance sensor and configured to send an encoded signal to the piezoresistive elements of the resistive bridge configuration. A signal receiver is electrically connected to the piezoresistive elements and configured to receive a signal from the physical disturbance sensor. The received signal from the physical disturbance sensor is correlated with the sent encoded signal in determining a measure of physical disturbance.

公开(公告)号：US20220263009A1

公开(公告)日：2022-08-18

申请号：US17628255

申请日：2020-07-15

申请人： EVATEC AG

发明人： Andrea Mazzalai ,  Volker Röbisch ,  Bernd Heinz

IPC分类号： H01L41/316 ,  H01L41/08 ,  H01L41/187 ,  H01L41/319 ,  C01B21/06 ,  C23C14/34 ,  C23C14/00 ,  C23C14/06 ,  C23C14/02

摘要： A substrate having a surface coated with a piezoelectric coating I, the coating including A-xMexN, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element Me from the transition metal groups 3b, 4b, 5b 6b the lanthanides, and Mg the coating I having a thickness d, and further including a transition layer wherein the ratio of atomic percentage of Me to atomic percentage of Al steadily rises along a thickness extent δ3 of said coating for which there is valid: δ3≤d.

公开(公告)号：US11411168B2

公开(公告)日：2022-08-09

申请号：US16513143

申请日：2019-07-16

申请人： Akoustis, Inc.

发明人： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters

IPC分类号： H01L41/316 ,  H03H3/02 ,  H01L41/187 ,  H01L41/053 ,  H01J37/34 ,  C23C14/34 ,  C23C14/06 ,  C23C14/02 ,  H03H9/56 ,  H01L41/319

摘要： A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

公开(公告)号：US20220173302A1

公开(公告)日：2022-06-02

申请号：US17672283

申请日：2022-02-15

申请人： ROHM CO., LTD.

发明人： Koji NOMURA ,  Nobufumi MATSUO ,  Tomohiro DATE

IPC分类号： H01L41/08 ,  H01L41/047 ,  H01L41/187 ,  H01L41/319

摘要： A piezoelectric element 10 includes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Q1 is a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Q1 until the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.

公开(公告)号：US20220093844A1

公开(公告)日：2022-03-24

申请号：US17539422

申请日：2021-12-01

申请人： FUJIFILM Corporation

发明人： Kenichi UMEDA ,  Yukihiro OKUNO ,  Takami ARAKAWA

IPC分类号： H01L41/08 ,  H01L41/319

摘要： A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1−dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1αa2)(Zrb1Tib2βb3)Oc, where 0.5

公开(公告)号：US20210376222A1

公开(公告)日：2021-12-02

申请号：US17337301

申请日：2021-06-02

申请人： INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

发明人： Hyung Ho PARK ,  Kyung Mun KANG ,  Yue WANG ,  Min Jae KIM ,  Chabungbam Akendra SINGH ,  Chan LEE

IPC分类号： H01L41/187 ,  H01L41/27 ,  C23C16/455 ,  H01L41/319 ,  H01L41/316 ,  C09K11/55 ,  H01L41/113

摘要： Provided are a piezoluminescence structure, a piezoelectric structure, a manufacturing method thereof, and a high-sensitivity pressure sensor using the same. The piezoelectric structure includes: a plurality of perovskite material layers each including a material having an AnBnO3n perovskite structure; and interlayers inserted between the plurality of perovskite material layers and including A*O which is a metal oxide having reaction resistance to CO2. Here, A and A* are different elements and are one of an alkaline earth metal element, an alkali metal element, a lanthanide element, and a post-transition metal element, B is a transition metal element, O is an oxygen element, and n is a positive (+) integer. The piezoelectric structure may be a piezoluminescence structure.

公开(公告)号：US11101428B2

公开(公告)日：2021-08-24

申请号：US16064416

申请日：2016-12-21

申请人： Soitec

发明人： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC分类号： H01L41/39 ,  H01L41/319 ,  H01L41/187 ,  C30B29/22 ,  C30B25/18 ,  H01L41/312 ,  H01L21/762 ,  C30B29/30 ,  H03H9/02 ,  H03H9/54 ,  H03H9/64 ,  H01L41/316

摘要： A method of manufacturing a monocrystalline layer, comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.