公开(公告)号：US20240065105A1

公开(公告)日：2024-02-22

申请号：US17890057

申请日：2022-08-17

Applicant: FUJIFILM DIMATIX, INC.

Inventor： Youming Li ,  Diane Liu ,  Darren Imai

IPC: H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/09 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  B41J2/14

CPC classification number: H01L41/319 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/316 ,  B41J2/14274

Abstract: A piezoelectric film stack is created by forming a lower electrode stack on a structured substrate. A pyrochlore lead zirconium titanate (PZT) buffer substrate layer is then formed on the lower electrode stack. A rapid thermal anneal of the PZT buffer substrate layer is then performed. Epitaxial perovskite (100) PZT film on the PZT buffer substrate layer is grown. An upper electrode stack is formed on the perovskite (100) PZT film.

公开(公告)号：US10074798B2

公开(公告)日：2018-09-11

申请号：US14560902

申请日：2014-12-04

Applicant: SAMSUNG MEDISON CO., LTD.

Inventor： Won-Hee Lee ,  Jin-Ho Gu ,  Jae-Yk Kim

IPC: H01L41/314 ,  H01L41/18 ,  H01L41/047 ,  H01L41/332 ,  H01L41/319 ,  H01L41/317 ,  H01L41/37 ,  B06B1/06

CPC classification number: H01L41/314 ,  B06B1/0622 ,  B06B1/0629 ,  B06B1/064 ,  H01L41/0471 ,  H01L41/183 ,  H01L41/317 ,  H01L41/319 ,  H01L41/332 ,  H01L41/37 ,  Y10T29/42 ,  Y10T156/11

Abstract: Provided is a method of manufacturing an ultrasonic probe. The method includes forming a sacrificial layer on a substrate; forming a plurality of openings in the sacrificial layer that are separated from one another; forming piezoelectric units by growing a piezoelectric element in each of the plurality of openings; and removing the sacrificial layer.

公开(公告)号：US09882116B2

公开(公告)日：2018-01-30

申请号：US15144585

申请日：2016-05-02

Applicant: INDIAN INSTITUTE OF TECHNOLOGY MADRAS

Inventor： Maneesh Chandran ,  M. S. Ramachandra Rao

IPC: H01L29/15 ,  H01L41/08 ,  H01L41/319 ,  H03H9/02 ,  H01L29/16 ,  H01L29/66 ,  H01L29/84 ,  H01L41/187 ,  H01L41/316 ,  H01L21/02 ,  H01L41/253

CPC classification number: H01L41/0815 ,  H01L21/02521 ,  H01L29/1602 ,  H01L29/66015 ,  H01L29/84 ,  H01L41/1876 ,  H01L41/253 ,  H01L41/316 ,  H01L41/319 ,  H03H9/02582

Abstract: Methods for fabricating a piezoelectric device are provided. The methods can include providing a substrate and forming a nanocrystalline diamond layer on a first surface of the substrate. The methods can also include depositing a piezoelectric layer on a first surface of the nanocrystalline diamond layer.

公开(公告)号：US09868281B2

公开(公告)日：2018-01-16

申请号：US15585569

申请日：2017-05-03

Applicant: ROHM CO., LTD.

Inventor： Takaya Nagahata

IPC: B41J2/14 ,  B41J2/045 ,  B41J2/175 ,  H01L41/047 ,  H01L41/053 ,  H01L41/08 ,  H01L41/083 ,  H01L41/09 ,  H01L41/187 ,  B41J2/16

CPC classification number: B41J2/04581 ,  B41J2/04541 ,  B41J2/14032 ,  B41J2/1404 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2/17596 ,  B41J2002/14241 ,  B41J2002/14306 ,  B41J2002/14491 ,  B41J2202/03 ,  B41J2202/05 ,  B41J2202/07 ,  B41J2202/13 ,  B41J2202/22 ,  H01L41/0472 ,  H01L41/0475 ,  H01L41/0533 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/187 ,  H01L41/1876 ,  H01L41/27 ,  H01L41/318 ,  H01L41/319 ,  H01L41/33

Abstract: An inkjet head includes a substrate that defines a cavity in which ink is stored, a vibrating membrane that is supported by the substrate and that defines the cavity, and a piezoelectric device that is disposed on the vibrating membrane and that changes a volume of the cavity by displacing the vibrating membrane. A driving IC is mounted on the actuator substrate and drives the piezoelectric device.

公开(公告)号：US09821342B2

公开(公告)日：2017-11-21

申请号：US14582304

申请日：2014-12-24

Applicant: Seiko Epson Corporation

Inventor： Chikara Kojima ,  Koji Ohashi ,  Yoshinao Miyata

IPC: H01L41/08 ,  B06B1/06 ,  H01L27/18 ,  H01L41/09 ,  H01L41/113 ,  H01L41/319 ,  H01L41/332 ,  G01S15/89

CPC classification number: B06B1/0629 ,  G01S15/8915 ,  H01L27/18 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/319 ,  H01L41/332

Abstract: Provided is an ultrasonic sensor including a piezoelectric elements arranged along a first direction and a second direction on a vibration plate, an insulation layer, and conductive lines. Each piezoelectric element including a first electrode, a piezoelectric layer, and a second electrode. The first electrode is partially removed in a regions between the piezoelectric elements. The second electrode is a separate electrode provided for each piezoelectric element. The insulation layer covers the second electrodes and has holes through which portions at opposite ends of the second electrodes along the first direction are partially exposed. Each conductive line is provided between adjacent ones of the second electrodes along the first direction and electrically connects, via the holes, the adjacent ones of the second electrodes.

公开(公告)号：US09799821B2

公开(公告)日：2017-10-24

申请号：US14890518

申请日：2014-05-01

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Toshihiro Doi ,  Hideaki Sakurai ,  Nobuyuki Soyama

IPC: B32B3/00 ,  H01L41/187 ,  C23C18/12 ,  H01L49/02 ,  H01L41/318 ,  H01L41/319 ,  H01L21/02 ,  H01L27/108 ,  H01L27/11507 ,  H01L29/51 ,  H01L37/02 ,  H01L41/08

CPC classification number: H01L41/1876 ,  C23C18/1216 ,  C23C18/1254 ,  H01L21/02197 ,  H01L21/02282 ,  H01L27/10805 ,  H01L27/11507 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517 ,  H01L37/025 ,  H01L41/0815 ,  H01L41/318 ,  H01L41/319

Abstract: A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.

公开(公告)号：US20170158571A1

公开(公告)日：2017-06-08

申请号：US15325592

申请日：2015-04-27

Applicant: YOUTEC CO., LTD.

Inventor： Takeshi KIJIMA

IPC: C04B41/50 ,  C04B35/472 ,  C04B35/622 ,  H01L41/39 ,  C04B41/87 ,  H01L41/047 ,  H01L41/187 ,  C04B35/491 ,  C04B41/00

CPC classification number: C04B41/5041 ,  B32B18/00 ,  C04B35/472 ,  C04B35/491 ,  C04B35/62218 ,  C04B41/009 ,  C04B41/87 ,  C04B2235/3234 ,  C04B2235/3249 ,  C04B2235/3296 ,  C04B2235/768 ,  C04B2237/34 ,  C04B2237/346 ,  C04B2237/348 ,  C04B2237/704 ,  C23C14/088 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/318 ,  H01L41/319 ,  H01L41/39

Abstract: To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(Zr1-ATiA)O3 film; and a Pb(Zr1-xTix)O3 film formed on the Pb(Zr1-ATiA)O3 film; wherein the A and x satisfy the following Formulae 1 to 3: 0≦A≦0.1  Formula 1 0.1

公开(公告)号：US20170141750A1

公开(公告)日：2017-05-18

申请号：US15342045

申请日：2016-11-02

Applicant: IQE, PLC

Inventor： Rodney Pelzel ,  Rytis Dargis ,  Andrew Clark ,  Howard Williams ,  Patrick Chin ,  Michael Lebby

IPC: H03H1/00 ,  H01L27/06 ,  H01L29/737 ,  H01L29/66 ,  H01L23/66 ,  H01L29/778

CPC classification number: H03H1/0007 ,  H01L23/66 ,  H01L27/0688 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/778 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/319 ,  H01L2223/6672 ,  H03H3/02 ,  H03H3/08 ,  H03H9/175 ,  H03H2001/0064 ,  H03H2001/0085 ,  H03H2003/025

Abstract: Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：US20170119349A1

公开(公告)日：2017-05-04

申请号：US15332381

申请日：2016-10-24

Applicant: SEIKO EPSON CORPORATION

Inventor： Hiromu MIYAZAWA ,  Hiroshi ITO ,  Tomoaki NAKAMURA ,  Masayoshi YAMADA ,  Sayaka YAMASAKI ,  Tsukasa FUNASAKA

IPC: A61B8/00 ,  H01L41/08 ,  H01L41/113 ,  G01S7/52 ,  H01L41/29 ,  H01L41/27 ,  B06B1/06 ,  G01S15/89 ,  H01L41/047 ,  H01L41/187

CPC classification number: A61B8/4494 ,  A61B8/4472 ,  A61B8/54 ,  B06B1/0622 ,  G01S7/5208 ,  G01S7/52082 ,  G01S15/8913 ,  G01S15/8925 ,  H01L27/20 ,  H01L41/047 ,  H01L41/081 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/1876 ,  H01L41/27 ,  H01L41/29 ,  H01L41/318 ,  H01L41/319 ,  H01L41/332

Abstract: A receiving transducer includes: a flexible portion; a piezoelectric film provided on the flexible portion; a first electrode provided between a first surface of the flexible portion, on which the piezoelectric body is provided, and a second surface of the piezoelectric film that is a surface not facing the flexible portion; and a second electrode that is provided between the first and second surfaces and that faces the first electrode with a gap interposed therebetween in plan view as viewed from the thickness direction of the flexible portion.

公开(公告)号：US20170092841A1

公开(公告)日：2017-03-30

申请号：US15275935

申请日：2016-09-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Minako Nakasu ,  Motokazu Kobayashi ,  Hiroto Numazawa ,  Masatoshi Watanabe

IPC: H01L41/27 ,  H01L41/08 ,  H01L41/297 ,  B05D3/00 ,  C23C30/00 ,  B05C11/00 ,  B05C9/02 ,  H01L41/047 ,  H01L41/317

CPC classification number: B05D3/007 ,  B05C9/02 ,  B05C11/00 ,  B41J2/14233 ,  B41J2202/03 ,  B41J2202/11 ,  C23C30/005 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/29 ,  H01L41/317 ,  H01L41/319

Abstract: A substrate for piezoelectric body formation has a base substrate layer containing at least SiO2 or SiN in the surface, an intermediate layer containing at least one of Ti and TiO2 on the base substrate layer, and an electrode layer containing Pt on the intermediate layer, in which the film thickness of the electrode layer is 40 nm or more and 1000 nm or less and Ti is not detected in the surface of the electrode layer by an elemental quantitative analysis method.