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公开(公告)号：US12120958B2
公开(公告)日：2024-10-15
申请号：US17164889
申请日：2021-02-02
发明人： Zhengbao Yang , Yao Shan
IPC分类号： H10N30/097 , H10N30/045 , H10N30/08 , H10N30/853 , H10N30/20
CPC分类号： H10N30/045 , H10N30/097 , H10N30/8536 , H10N30/8542 , H10N30/8554 , H10N30/08 , H10N30/2048 , Y10T29/42
摘要： A method of manufacturing a ceramic structure, a method of manufacturing a ceramic structure with multiple layers of ceramic material, and a method of manufacturing a piezoelectric ceramic structure. The method of manufacturing a ceramic structure includes the steps of: placing a sheet of ceramic material on a supporting platform, wherein the supporting platform is arranged to elevate the sheet of ceramic material from a base of the supporting platform by supporting only a first portion of the sheet of ceramic material; sintering the sheet of ceramic material; and during the step of sintering of the sheet of ceramic material, facilitating forming a curvature on the sheet of ceramic material at a second portion of the sheet of ceramic material which is not supported by the supporting platform.
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公开(公告)号：US12063862B2
公开(公告)日：2024-08-13
申请号：US17094357
申请日：2020-11-10
发明人： Kenji Ishiguro , Yutaka Murai , Kouichi Hosoya , Osamu Onishi , Daiji Tamakura , Takafumi Inoue , Masayuki Tsuji , Kenichiro Takumi
IPC分类号： H10N30/00 , D03D1/00 , H02N2/18 , H10N30/857
CPC分类号： H10N30/1061 , D03D1/0088 , H02N2/18 , H10N30/857 , D10B2401/16 , Y10T29/42
摘要： A piezoelectric fiber composite that includes a substrate having a first expansion and contraction rate, a piezoelectric fiber assembly having piezoelectric fibers that generate electrical charges upon application of external energy and has a second expansion and contraction rate different from the first expansion and contraction rate of the substrate, and a joint portion that joins the substrate and the piezoelectric fiber assembly.
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公开(公告)号：US11931203B2
公开(公告)日：2024-03-19
申请号：US17376816
申请日：2021-07-15
CPC分类号： A61B8/4272 , B06B1/067 , G10K11/30 , H10N30/04 , H10N30/06 , Y10T29/42 , Y10T156/10
摘要： Methods for fabricating high frequency ultrasound transducers are disclosed. The methods include fabricating an acoustic lens layer with a curved center section and two flat side sections. The curved section includes a center portion with a midpoint and an edge. The midpoint has a first thickness, and the edge has a second thickness. The center portion is fabricated so that an average of the first and second thicknesses is approximately equal to an odd multiple of a quarter-wavelength of the center frequency of the ultrasound transducer. The methods can also include bonding the lens layer to a matching layer that is operationally coupled to a transducer layer. The matching layer can include an epoxy layer and another layer. Bonding the lens layer includes bonding the other layer to the lens layer using the epoxy layer such that the other layer is positioned between the epoxy layer and the transducer layer.
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公开(公告)号：US20240088863A1
公开(公告)日：2024-03-14
申请号：US18515882
申请日：2023-11-21
发明人： Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC分类号： H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87
CPC分类号： H03H9/0222 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87 , H10N30/877 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号：US11925378B2
公开(公告)日：2024-03-12
申请号：US16527647
申请日：2019-07-31
发明人： Jeffrey D. Messerly , Brian D. Black , William A. Olson , Foster B. Stulen , Frederick Estera , William E. Clem , Jerome R. Morgan , Jeffrey L. Aldridge , Stephen M. Leuck , Kevin L. Houser
IPC分类号： A61B17/00 , A61B17/32 , A61N7/02 , B29C65/48 , H10N30/20 , H10N30/50 , H10N30/88 , A61B17/16 , A61B17/22 , A61B17/29 , A61B18/00 , B29L31/00
CPC分类号： A61B17/320068 , A61B17/00234 , A61N7/02 , B29C65/4805 , H10N30/206 , H10N30/50 , H10N30/505 , H10N30/886 , A61B2017/00017 , A61B2017/00402 , A61B2017/00477 , A61B2017/00526 , A61B2017/0088 , A61B17/1628 , A61B2017/22027 , A61B2017/294 , A61B2017/32007 , A61B2017/320074 , A61B2017/320082 , A61B2017/320088 , A61B2017/320089 , A61B2017/320098 , A61B2018/00565 , A61B2018/00589 , A61B2018/00595 , B29L2031/7546 , Y10T29/42
摘要： An ultrasonic surgical device is disclosed including a surgical tool including a proximal transducer mounting portion defining a surface, a distal end effector end, and a waveguide disposed therebetween, the waveguide extending along a longitudinal axis. The ultrasonic surgical device further includes a transducer is in mechanical communication with the surface of the transducer mounting portion. The transducer is configured to operate in a D31 mode with respect to the longitudinal axis of the waveguide. Upon activation by an electrical signal having a predetermined frequency component, the transducer is configured to induce a standing wave in the surgical tool to cause the end effector to vibrate, the standing wave having a wavelength proportional to the predetermined frequency component of the electrical signal.
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公开(公告)号：US11895920B2
公开(公告)日：2024-02-06
申请号：US17811222
申请日：2022-07-07
申请人： Akoustis, Inc.
IPC分类号： H10N30/076 , H03H3/02 , H10N30/06 , H10N30/053 , H10N30/85
CPC分类号： H10N30/076 , H03H3/02 , H10N30/053 , H10N30/06 , H10N30/85 , Y10T29/42 , Y10T29/49005
摘要： A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
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公开(公告)号：US11894833B2
公开(公告)日：2024-02-06
申请号：US16851729
申请日：2020-04-17
发明人： Jea Shik Shin , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , In Sang Song , Moon Chul Lee
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02118 , H03H2003/021 , Y10T29/42
摘要： Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
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公开(公告)号：US11832521B2
公开(公告)日：2023-11-28
申请号：US16852007
申请日：2020-04-17
申请人： Akoustis, Inc.
发明人： Craig Moe , Jeffrey M. Leathersich
IPC分类号： H10N30/074 , H03H3/02 , H10N30/079 , H10N30/85 , H10N30/076
CPC分类号： H10N30/074 , H03H3/02 , H10N30/079 , H10N30/85 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H10N30/076 , Y10T29/42 , Y10T29/49005
摘要： A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.
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公开(公告)号：US20230275559A1
公开(公告)日：2023-08-31
申请号：US18302440
申请日：2023-04-18
申请人： Soitec
发明人： Arnaud Castex , Daniel Delprat , Bernard Aspar , Ionut Radu
IPC分类号： H03H9/02 , H03H3/04 , H10N30/072 , H10N30/073 , H10N30/00 , H10N30/853 , H03H3/10
CPC分类号： H03H9/02834 , H03H9/02574 , H03H3/04 , H10N30/072 , H10N30/073 , H10N30/1051 , H10N30/8542 , H03H3/10 , Y10T29/42 , H10N30/082
摘要： The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
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公开(公告)号：US11723276B2
公开(公告)日：2023-08-08
申请号：US16830721
申请日：2020-03-26
发明人： Masaaki Fukumoto
IPC分类号： H01H13/85 , H10N30/20 , H10N30/01 , H03K17/96 , H10N30/87 , H01H13/14 , H01H13/704 , G06F3/02 , G06F3/041 , H01H13/703 , H01H13/7057 , H01H13/702 , H03K17/967 , H01H13/705
CPC分类号： H10N30/01 , H01H13/14 , H01H13/704 , H01H13/85 , H03K17/9622 , H10N30/20 , H10N30/87 , G06F3/0202 , G06F3/041 , G06F3/0414 , H01H13/702 , H01H13/703 , H01H13/705 , H01H13/7057 , H01H2201/02 , H01H2215/052 , H01H2223/042 , H01H2231/002 , H03K17/964 , H03K17/967 , H03K2217/96054 , H03K2217/96062 , Y10T29/42
摘要： A method of making an actuator switch is disclosed. One method including: receiving a threshold amount of pressure on a top surface of a flexible film; in response to receiving the threshold amount of pressure, contacting a first electrode with a second electrode; in response to receiving the threshold amount of pressure, generating i) a first capacitive connection between a row electrode and the second electrode and ii) a second capacitive connection between a column electrode and the second electrode; in response to the first electrode contacting the second electrode, generating, by a piezoelectric actuator, haptic feedback; and in response to the generating the first capacitive connection and the second capacitive connection, providing an input detection signal.
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