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公开(公告)号：US20240341196A1
公开(公告)日：2024-10-10
申请号：US18130521
申请日：2023-04-04
发明人： Xudong Wang , Jun Li
IPC分类号： H10N30/85 , C08J7/04 , D01F4/00 , H02N2/18 , H10N30/092
CPC分类号： H10N30/852 , C08J7/0427 , D01F4/00 , H02N2/186 , H10N30/092 , C08J2383/04 , C08J2477/04 , D10B2401/16
摘要： A stretchable piezoelectric thin film, and method of manufacture, an open mesh structure formed by a repeating branching and joining pattern. The thin film is manufactured by slowly lifting amino acid nanofibrils from a water-alcohol biphasic solvent. The film automatically assembles into a truss-like mesh network of amino acid nanofibrils that allows the open meshes to close with narrowed intersection angles between the amino acid nanofibrils. The alcohol molecules of the water-alcohol biphasic solvent preferably bind to the carboxyl groups on the amino acid surfaces thus limiting the growth along the side facets of the amino acid surfaces and promoting growth along the growth front producing a bifurcation in the amino acid biocrystal network.
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公开(公告)号：US12021498B2
公开(公告)日：2024-06-25
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US11998389B2
公开(公告)日：2024-06-04
申请号：US17498793
申请日：2021-10-12
发明人： Paul Douglas Corl
CPC分类号： A61B8/4483 , A61B6/461 , A61B8/0891 , A61B8/12 , A61B8/14 , A61B8/445 , B06B1/0622 , B06B1/067 , H10N30/092 , H10N30/852 , B06B2201/76 , Y10T29/49005
摘要： An ultrasound transducer for use in intravascular ultrasound (IVUS) imaging systems including a single crystal composite (SCC) layer is provided. The transducer has a front electrode on a side of the SCC layer; and a back electrode on the opposite side of the SCC layer. The SCC layer may have a bowl shape including pillars made of a single crystal piezoelectric material embedded in a polymer matrix. Also provided is an ultrasound transducer as above, with the back electrode split into two electrodes electrically isolated from one another. A method of forming an ultrasound transducer as above is also provided. An IVUS imaging system is provided, including an ultrasound emitter and receiver rotationally disposed within an elongate member; an actuator; and a control system controlling emission of pulses and receiving ultrasound echo data associated with the pulses. The ultrasound emitter and receiver include an ultrasound transducer as above.
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公开(公告)号：US11979134B2
公开(公告)日：2024-05-07
申请号：US17071831
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.
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公开(公告)号：US20240088863A1
公开(公告)日：2024-03-14
申请号：US18515882
申请日：2023-11-21
发明人： Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC分类号： H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87
CPC分类号： H03H9/0222 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87 , H10N30/877 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号：US11910719B2
公开(公告)日：2024-02-20
申请号：US17553804
申请日：2021-12-17
申请人： FUJIFILM Corporation
发明人： Shingo Fujikata
CPC分类号： H10N30/852 , H04R17/00
摘要： Provided is a piezoelectric film capable of realizing a piezoelectric speaker in which a high sound pressure is obtained, a sufficient sound pressure characteristic is obtained in a wide frequency band, and generation of a chattering sound particularly in a low sound can be suppressed. The piezoelectric film is a piezoelectric film including a polymer-based piezoelectric composite material which contains piezoelectric particles in a matrix containing a polymer material, and electrode layers which are laminated on both surfaces of the polymer-based piezoelectric composite material, in which a variation coefficient of a destructive force of a laminate having the polymer-based piezoelectric composite material and the electrode layers in a plane direction is 0.25 or less.
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公开(公告)号：US20240049605A1
公开(公告)日：2024-02-08
申请号：US18382604
申请日：2023-10-23
发明人： Kentaro NAKAMURA , Tetsuya KIMURA
CPC分类号： H10N30/85 , H03H9/02133 , H03H9/02228 , H03H9/02566 , H03H9/02818
摘要： An acoustic wave device includes a scandium-containing aluminum nitride film (ScAlN film), and an electrode on the ScAlN film. The ScAlN film includes at least one portion where a crystal orientation toward 90° from a crystal c-axis direction is rotated about 30°±5° or rotated about 15°±5°, the crystal c-axis direction being a film thickness direction of the ScAlN film or substantially a film thickness direction of the ScAlN film.
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公开(公告)号：US11895920B2
公开(公告)日：2024-02-06
申请号：US17811222
申请日：2022-07-07
申请人： Akoustis, Inc.
IPC分类号： H10N30/076 , H03H3/02 , H10N30/06 , H10N30/053 , H10N30/85
CPC分类号： H10N30/076 , H03H3/02 , H10N30/053 , H10N30/06 , H10N30/85 , Y10T29/42 , Y10T29/49005
摘要： A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
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公开(公告)号：US11871672B2
公开(公告)日：2024-01-09
申请号：US16660647
申请日：2019-10-22
发明人： Donald J. Sirbuly , Shaochen Chen , Kanguk Kim , Wei Zhu
IPC分类号： H01L41/37 , H01L41/33 , H01L41/18 , H10N30/092 , C08L67/07 , C08K5/5419 , C08K3/22 , C08K3/04 , H10N30/00 , H10N30/08 , H10N30/80 , H10N30/85 , H04R17/00 , H10N30/853
CPC分类号： H10N30/092 , C08K3/046 , C08K3/22 , C08K5/5419 , C08L67/07 , H10N30/00 , H10N30/08 , H10N30/80 , H10N30/852 , H04R17/005 , H10N30/8536
摘要： Methods, systems, and devices are disclosed for fabricating 3D piezoelectric materials. In one aspect, a method includes photopolymerizing a selected portion of a two dimensional plane in a sample of a photolabile polymer solution containing piezoelectric nanoparticles to form a layer of a piezoelectric material, the photopolymerizing including directing light from a light source based on a pattern design in the selected portion of the photolabile polymer solution; and moving one or both of the sample and the directed light to photopolymerize another selected portion of another two dimensional plane in the sample to form another layer of the piezoelectric material.
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公开(公告)号：US20230421964A1
公开(公告)日：2023-12-28
申请号：US18464417
申请日：2023-09-11
申请人： FUJIFILM Corporation
发明人： Yoshinori Tamada
IPC分类号： H04R17/00 , H10N30/85 , H10N30/88 , H10N30/092
CPC分类号： H04R17/00 , H10N30/852 , H10N30/883 , H10N30/092
摘要： An object of the present invention is to provide a piezoelectric film that has satisfactory durability, is capable of outputting a sound with a high sound pressure, decreases the resistance of an electrode layer, and is capable of suppressing heat generation. The above-described object is achieved by providing the piezoelectric film including a piezoelectric layer containing piezoelectric particles in a matrix that contains a polymer material, electrode layers provided on both surfaces of the piezoelectric layer, and an interlayer provided on at least one side between the piezoelectric layer and the electrode layers, in which the interlayer contains carbon and/or a metal, and a metal atom concentration of 30 to 90 atm % or a carbon atom concentration of 85 to 95 atm % is satisfied.
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