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公开(公告)号：US20210111699A1
公开(公告)日：2021-04-15
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US11764750B2
公开(公告)日：2023-09-19
申请号：US16455627
申请日：2019-06-27
发明人： Liping D. Hou , Kun-Mao Pan , Shing-Kuo Wang
CPC分类号： H03H9/02102 , H03H3/02 , H03H9/0504 , H03H9/13 , H10N30/06 , H10N30/09 , H03H2003/021
摘要： Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.
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公开(公告)号：US20210111693A1
公开(公告)日：2021-04-15
申请号：US17071831
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.
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公开(公告)号：US11909373B2
公开(公告)日：2024-02-20
申请号：US17071849
申请日：2020-10-15
CPC分类号： H03H9/02015 , H03H9/0211 , H03H9/02102 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.
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公开(公告)号：US20220416149A1
公开(公告)日：2022-12-29
申请号：US17680231
申请日：2022-02-24
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave resonator includes a substrate, and a stack that is supported by the substrate. The stack includes a first electrode, a multilayer buffer, a piezoelectric layer, and a second electrode. The multilayer buffer is disposed between the first electrode and the piezoelectric layer, and the piezoelectric layer is disposed between the multilayer buffer and the second electrode. The multilayer buffer includes two or more pairs of alternating layers. A first pair of the two or more pairs include a first layer of crystalline material having a first lattice constant, and a second layer of crystalline material having a lattice constant that is distinct from the first lattice constant.
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公开(公告)号：US20210111702A1
公开(公告)日：2021-04-15
申请号：US17071849
申请日：2020-10-15
摘要： A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.
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公开(公告)号：US20240243723A1
公开(公告)日：2024-07-18
申请号：US18415521
申请日：2024-01-17
发明人： Romain Gerbe , Liping D. Hou , Shing-Kuo Wang , Yuefei Yang , Kun-Mao Pan , Andy Chien-Hsiang Chen
CPC分类号： H03H9/173 , H03H9/02086 , H03H9/175
摘要： A bulk acoustic resonator includes a stack structures, including a piezoelectric layer having a first side and an opposing second side; a first electrode disposed under the first side of the piezoelectric layer; a second electrode disposed over the second side of the piezoelectric layer; and a multistep structure with a bottom part having first dimensions disposed between the piezoelectric layer and second electrode and a second part having second dimensions, different from the first dimensions, disposed between the bottom part of the multistep structure and the second electrode. An active region of the stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode, and the multistep structure is arranged to provide destructive interference of lateral acoustic waves within the bulk acoustic resonator.
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公开(公告)号：US12021498B2
公开(公告)日：2024-06-25
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US11979134B2
公开(公告)日：2024-05-07
申请号：US17071831
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.
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公开(公告)号：US11736088B2
公开(公告)日：2023-08-22
申请号：US16820625
申请日：2020-03-16
发明人： Robert B. Stokes , Alvin M. Kong , Liping D. Hou , Dae-Jin Hyun , Shing-Kuo Wang
CPC分类号： H03H9/173 , H03H9/02015 , H03H9/02118 , H03H9/02574 , H03H9/131 , H03H2009/0233
摘要： Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.
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