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公开(公告)号：US11764750B2
公开(公告)日：2023-09-19
申请号：US16455627
申请日：2019-06-27
发明人： Liping D. Hou , Kun-Mao Pan , Shing-Kuo Wang
CPC分类号： H03H9/02102 , H03H3/02 , H03H9/0504 , H03H9/13 , H10N30/06 , H10N30/09 , H03H2003/021
摘要： Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.
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公开(公告)号：US20210111693A1
公开(公告)日：2021-04-15
申请号：US17071831
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.
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公开(公告)号：US12027616B1
公开(公告)日：2024-07-02
申请号：US17166258
申请日：2021-02-03
IPC分类号： H01L29/778 , H01L29/20 , H01L29/40 , H01L29/423
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42372
摘要： A device includes a semiconductor die, a source contact, a drain contact, a first passivation layer, a T-shaped gate contact, a field plate, and a second passivation layer. The semiconductor die generally includes a plurality of semiconductor layers disposed on an insulating substrate. The source contact and the drain contact are electrically coupled to a channel formed in the semiconductor layers and defining an active area of the device. The first passivation layer generally covers the active area of the device, the source contact, and the drain contact. The T-shaped gate contact may be disposed within the active area of the device. The T-shaped gate contact is generally electrically separated from the channel and comprises a column portion and a cap portion. The field plate may be disposed above the active area of the device. The field plate is generally adjacent to and laterally separated from the cap portion of the T-shaped gate contact. The second passivation layer generally covers the first passivation layer, the cap portion of the T-shaped gate contact, and the field plate.
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公开(公告)号：US20220416149A1
公开(公告)日：2022-12-29
申请号：US17680231
申请日：2022-02-24
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave resonator includes a substrate, and a stack that is supported by the substrate. The stack includes a first electrode, a multilayer buffer, a piezoelectric layer, and a second electrode. The multilayer buffer is disposed between the first electrode and the piezoelectric layer, and the piezoelectric layer is disposed between the multilayer buffer and the second electrode. The multilayer buffer includes two or more pairs of alternating layers. A first pair of the two or more pairs include a first layer of crystalline material having a first lattice constant, and a second layer of crystalline material having a lattice constant that is distinct from the first lattice constant.
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公开(公告)号：US20210111702A1
公开(公告)日：2021-04-15
申请号：US17071849
申请日：2020-10-15
摘要： A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.
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公开(公告)号：US11276764B1
公开(公告)日：2022-03-15
申请号：US16988686
申请日：2020-08-09
发明人： Yuefei Yang , Shing-Kuo Wang , Dheeraj Mohata , Liping Daniel Hou
IPC分类号： H01L29/66 , H01L23/66 , H01L29/737 , H01L29/423 , H01L29/40 , H01L29/417
摘要： A device including a semiconductor die, a first contact, a second contact, a third contact, a first passivation layer, a second passivation layer and an interconnect metal. The semiconductor die may include a plurality of semiconductor layers disposed on a GaAs substrate. The first contact may be electrically coupled to a semiconductor emitter layer. The second contact may be electrically coupled to a semiconductor base layer. The third contact may be electrically coupled to a semiconductor sub-collector layer. The first passivation layer may cover one or more of the semiconductor and the contacts. The first passivation layer may comprise an inorganic insulator. The second passivation layer may comprise an inorganic insulator or organic polymer with low dielectric constant deposited on the passivation layer. The interconnect metal may be coupled to the first contact and separated from the first passivation layer by the second passivation layer.
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公开(公告)号：US20210111699A1
公开(公告)日：2021-04-15
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US20200313648A1
公开(公告)日：2020-10-01
申请号：US16368754
申请日：2019-03-28
发明人： Shing-Kuo Wang , Liping Daniel Hou
摘要： Design and processes are described for fabricating single-crystal bulk acoustic wave resonators with better performance and better manufacturability. A low-acoustic-loss single-crystal piezoelectric layer is epitaxially grown on a substrate, followed with the formation of bottom electrode, metallic cavity frames, and gap filler material on the piezoelectric layer. Matching metallic cavity frames and gap filler material are formed on a second substrate. The two wafers are then bonded together by metal-to-metal bonding of the metallic cavity frames on the first wafer to the matching metallic cavity frame on the second wafer to form a sealed cavity between the bottom electrodes and the second wafer. The first substrate is then removed to expose the piezoelectric layer. This second wafer and the structures thereon are then ready to complete the BAW resonator and filter fabrication using standard wafer processing steps.
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公开(公告)号：US11909373B2
公开(公告)日：2024-02-20
申请号：US17071849
申请日：2020-10-15
CPC分类号： H03H9/02015 , H03H9/0211 , H03H9/02102 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.
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公开(公告)号：US11817839B2
公开(公告)日：2023-11-14
申请号：US17002498
申请日：2020-08-25
发明人： Shing-Kuo Wang , Liping Daniel Hou , Yuefei Yang
CPC分类号： H03H9/175 , H03H9/02015 , H03H9/131 , H03H9/176
摘要： A single-crystal bulk acoustic wave resonators with better performance and better manufacturability and a process for fabricating the same are described. A low-acoustic-loss layer of one or more single-crystal and/or poly-crystal piezoelectric materials is epitaxially grown and/or physically deposited on a surrogate substrate, followed with the formation of a bottom electrode and then a support structure on a first side of the piezoelectric layer. The surrogate substrate is subsequently removed to expose a second side of the piezoelectric layer that is opposite to the first side. A top electrode is then formed on the second side of the piezoelectric layer, followed by further processes to complete the BAW resonator and filter fabrication using standard wafer processing steps. In some embodiments, the support structure has a cavity or an acoustic mirror adjacent the first electrode layer to minimize leakage of acoustic wave energy.
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