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公开(公告)号：US12021498B2
公开(公告)日：2024-06-25
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US11979134B2
公开(公告)日：2024-05-07
申请号：US17071831
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.
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公开(公告)号：US20240088863A1
公开(公告)日：2024-03-14
申请号：US18515882
申请日：2023-11-21
发明人： Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC分类号： H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87
CPC分类号： H03H9/0222 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87 , H10N30/877 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号：US20240049605A1
公开(公告)日：2024-02-08
申请号：US18382604
申请日：2023-10-23
发明人： Kentaro NAKAMURA , Tetsuya KIMURA
CPC分类号： H10N30/85 , H03H9/02133 , H03H9/02228 , H03H9/02566 , H03H9/02818
摘要： An acoustic wave device includes a scandium-containing aluminum nitride film (ScAlN film), and an electrode on the ScAlN film. The ScAlN film includes at least one portion where a crystal orientation toward 90° from a crystal c-axis direction is rotated about 30°±5° or rotated about 15°±5°, the crystal c-axis direction being a film thickness direction of the ScAlN film or substantially a film thickness direction of the ScAlN film.
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公开(公告)号：US11895920B2
公开(公告)日：2024-02-06
申请号：US17811222
申请日：2022-07-07
申请人： Akoustis, Inc.
IPC分类号： H10N30/076 , H03H3/02 , H10N30/06 , H10N30/053 , H10N30/85
CPC分类号： H10N30/076 , H03H3/02 , H10N30/053 , H10N30/06 , H10N30/85 , Y10T29/42 , Y10T29/49005
摘要： A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
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公开(公告)号：US11832521B2
公开(公告)日：2023-11-28
申请号：US16852007
申请日：2020-04-17
申请人： Akoustis, Inc.
发明人： Craig Moe , Jeffrey M. Leathersich
IPC分类号： H10N30/074 , H03H3/02 , H10N30/079 , H10N30/85 , H10N30/076
CPC分类号： H10N30/074 , H03H3/02 , H10N30/079 , H10N30/85 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H10N30/076 , Y10T29/42 , Y10T29/49005
摘要： A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.
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公开(公告)号：US11757408B2
公开(公告)日：2023-09-12
申请号：US17914258
申请日：2021-03-08
摘要： An electrical field detector includes an electromechanical oscillator, part of which is included of a piezoelectric element, a frequency measuring device which is coupled to the oscillator so as to measure the oscillation frequency, and an electrical masking assembly. The electrical masking assembly is arranged close to the piezoelectric element so that, during an use of the detector, the piezoelectric element moves by vibrating relative to the electrical masking assembly. A variable part of the piezoelectric element is thus exposed to the electrical field to be measured. A change in the oscillating frequency then forms an electrical field measurement result.
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8.发明公开公开(公告)号：US20230163743A1
公开(公告)日：2023-05-25
申请号：US18157881
申请日：2023-01-23
申请人： Akoustis, Inc.
发明人： Jeffrey B. Shealy , Mary Winters , Craig Moe
IPC分类号： H03H3/02 , H03H9/13 , H03H9/17 , H03H9/10 , H03H9/05 , H03H9/02 , H03H9/54 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/85 , H10N30/086 , H10N30/88 , H10N30/87 , H10N30/00
CPC分类号： H03H3/02 , H03H9/13 , H03H9/105 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/0523 , H03H9/547 , H03H9/02015 , H03H9/02118 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/85 , H10N30/086 , H10N30/88 , H10N30/875 , H10N30/877 , H10N30/10513 , H03H2003/021 , H03H2003/025 , H10N30/072 , Y10T29/42
摘要： An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.
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公开(公告)号：US11999615B2
公开(公告)日：2024-06-04
申请号：US17415691
申请日：2019-12-27
CPC分类号： C01B21/0602 , H10N30/20 , H10N30/85
摘要： An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.
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公开(公告)号：US20240088860A1
公开(公告)日：2024-03-14
申请号：US18510119
申请日：2023-11-15
申请人： Akoustis, Inc.
发明人： Craig Moe , Jeffrey M. Leathersich
IPC分类号： H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54 , H10N30/00 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/85 , H10N30/87 , H10N30/88
CPC分类号： H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/10513 , H10N30/85 , H10N30/875 , H10N30/877 , H10N30/88 , H03H2003/021 , H03H2003/025 , H10N30/072 , Y10T29/42
摘要： A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.
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