Abstract:
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.
Abstract:
An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.
Abstract:
A filter comprises a series unit, and a shunt unit disposed between the series unit and a ground. The shunt unit includes resonators that are selectively operated, and each of the shunt resonators includes a film bulk acoustic resonator.
Abstract:
A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.
Abstract:
Circuitry includes an input node, an output node, acoustic filtering circuitry, an inductive element, and a capacitor. The acoustic filtering circuitry includes an acoustic filtering input node and an acoustic filtering output node. The inductive element is coupled in series with the acoustic filtering circuitry between the input node and the output node such that the inductive element is coupled between the input node and the acoustic filtering input node and the acoustic filtering output node is coupled to the output node. The capacitor is coupled in parallel with the acoustic filtering circuitry and the inductive element between the input node and the output node. Providing the inductive element in series with the acoustic filtering circuitry and the capacitor in parallel with the acoustic filtering circuitry and the inductive element provides a highly selective notch filter response between the input node and the output node with high attenuation.
Abstract:
A duplexer includes an antenna terminal, a transmission amplifier terminal and a reception amplifier terminal. The transmission amplifier terminal is coupled to the antenna terminal via a transmission filter. The reception amplifier terminal is coupled to a reception filter and the reception filter is coupled to the antenna terminal via a band-stop filter.
Abstract:
Circuitry includes an input node, an output node, acoustic filtering circuitry, an inductive element, and a capacitor. The acoustic filtering circuitry includes an acoustic filtering input node and an acoustic filtering output node. The inductive element is coupled in series with the acoustic filtering circuitry between the input node and the output node such that the inductive element is coupled between the input node and the acoustic filtering input node and the acoustic filtering output node is coupled to the output node. The capacitor is coupled in parallel with the acoustic filtering circuitry and the inductive element between the input node and the output node. Providing the inductive element in series with the acoustic filtering circuitry and the capacitor in parallel with the acoustic filtering circuitry and the inductive element provides a highly selective notch filter response between the input node and the output node with high attenuation.
Abstract:
A method and system for an acoustic wave band reject filter are disclosed. According to one aspect, an acoustic wave band reject filter includes a substrate and a plurality of acoustic wave band reject filter blocks. The substrate includes bonding pads formed on the substrate. Each one of the plurality of acoustic wave band reject filter blocks is fixed on a separate die. Each separate die has solder balls on a side of the die facing the substrate. The solder balls are positioned to electrically connect the bonding pads formed on the substrate to positions on each of the die.
Abstract:
Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.
Abstract:
Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.