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公开(公告)号：US12231112B2
公开(公告)日：2025-02-18
申请号：US17934414
申请日：2022-09-22
Applicant: RF360 EUROPE GMBH
Inventor： Edgar Schmidhammer , Marc Esquius Morote , Juha Sakari Ella
Abstract: An apparatus is disclosed for a lattice-type filter. In example aspects, the apparatus includes a filter circuit having a first port that is single-ended and a second port that is single-ended. The filter circuit also includes a transformer, a first resonator, a second resonator, a third resonator, and a fourth resonator. The transformer includes a first terminal, a second terminal, and a third terminal, with the third terminal coupled to the second port. The first resonator is coupled between the first port and the first terminal of the transformer. The second resonator is coupled between the first port and the second terminal of the transformer. The third resonator is coupled between the first terminal of the transformer and a ground. The fourth resonator is coupled between the second terminal of the transformer and the ground.
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公开(公告)号：US20240364308A1
公开(公告)日：2024-10-31
申请号：US18636326
申请日：2024-04-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hiroyuki YOSHIOKA
Abstract: A composite filter device includes a piezoelectric substrate, a first filter defining and functioning as a band pass filter and including a longitudinally coupled resonator acoustic wave filter located on the piezoelectric substrate, and a second filter including at least one resonator and an inductor connected to a reference potential. When an area inside an outer periphery of the inductor in a plan view is defined as an inductor area, at least a portion of the inductor area and the longitudinally coupled resonator acoustic wave filter overlap each other in the plan view. The composite filter device further includes a shield electrode located between the inductor and the longitudinally coupled resonator acoustic wave filter without being connected to a signal potential and the reference potential, and the shield electrode overlaps an entirety of the inductor area in the plan view.
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公开(公告)号：US20240348235A1
公开(公告)日：2024-10-17
申请号：US18613675
申请日：2024-03-22
Applicant: Skyworks Solutions, Inc.
Inventor： Kun Chen , Hao Wang , Li Chen , Ahmad Adel Ahmad Gheethan , Zhi Shen
IPC: H03H9/70
CPC classification number: H03H9/70
Abstract: An adjustable filter having a first contact; a second contact; and one or more switchable resonator circuits coupled between the first contact and the second contact, each switchable resonator circuit including a switch, a first impedance, and a resonator coupled in parallel with a second impedance, a parallel combination of the resonator and second impedance being coupled in series with the first impedance.
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公开(公告)号：US20240305273A1
公开(公告)日：2024-09-12
申请号：US18597127
申请日：2024-03-06
Applicant: SKYWORKS SOLUTIONS, INC.
Inventor： Yiliu Wang , Renfeng Jin , David Albert Feld
Abstract: Aspects and embodiments disclosed herein include filter module comprising an input port to receive a radio frequency signal, a first output port connected to an antenna, a filter disposed along a fundamental signal path from the input port to the first output port, and a second output port to output a harmonic signal generated in response to the RF signal, the second output port being electrically connected to a node on the fundamental signal path via a harmonic signal path including a resonating structure configured to improve a linearity response of the filter module, the resonating structure including resonators electrically connected to each other in anti-series or anti-parallel and disposed on a piezoelectric film, a polarity direction of a first half of the resonators opposite to a polarity direction of a second half of the resonators when a voltage is applied across the piezoelectric film.
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5.发明公开公开(公告)号：US20240283430A1
公开(公告)日：2024-08-22
申请号：US18588166
申请日：2024-02-27
Applicant: RF360 Singapore Pte. Ltd.
Inventor： Lasse Jalmari TOIVANEN
CPC classification number: H03H9/6406 , H03H9/703
Abstract: A filter is provided that includes a set of cascaded resonator stages coupled between a filter input and a first filter output, wherein the filter includes a second filter output coupled to an output of a first or an intermediate one of the set of cascaded resonator stages. Another filter includes a set of cascaded resonator stages coupled between a first filter input and a filter output, wherein the filter includes a second filter input coupled to an input of an intermediate or a last one of the set of cascaded resonator stages. Both filters are configured to apply a first filter frequency response to a first signal propagating via the set of cascaded resonator stages, and apply a second filter frequency response to a second signal propagating via a subset of one or more of the set of cascaded resonator stages.
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Patent Agency Ranking
公开(公告)号：US20240283426A1
公开(公告)日：2024-08-22
申请号：US18435564
申请日：2024-02-07
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Koichi SATO , Shinji YAMAMOTO
Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least one pair of comb-shaped electrodes provided on the piezoelectric layer, the at least one pair of comb-shaped electrodes including a plurality of electrode fingers, a first intermediate layer provided between the support substrate and the piezoelectric layer, a second intermediate layer provided between the support substrate and the first intermediate layer, the second intermediate layer having a porosity higher than a porosity of the first intermediate layer, and a third intermediate layer provided between the support substrate and the second intermediate layer, the third intermediate layer having a porosity lower than the porosity of the second intermediate layer.
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公开(公告)号：US20240162859A1
公开(公告)日：2024-05-16
申请号：US18519503
申请日：2023-11-27
Applicant: University of Florida Research Foundation, Inc. , NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Inventor： Roozbeh TABRIZIAN , Kevin S. JONES , George T. WANG
CPC classification number: H03B5/326 , H03H9/02015 , H03H9/173 , H03H9/703
Abstract: In one aspect, the disclosure relates to a super high frequency (SHF) or extremely high frequency (EHF) bulk acoustic resonator that includes a nanostructure, wherein the nanostructure includes a substrate, a three-dimensional structure disposed on the substrate, wherein the three-dimensional structure includes a planar structure including at least one nanocomponent and a matrix material contacting the nanocomponent on at least one side, the matrix material including an SiGe alloy or Ge. The disclosed bulk acoustic resonator operates at frequencies of from about 100 MHz to about 100 GHz, is capable of self-amplification upon application of direct current or voltage, and has a Q factor amplification exceeding 1. Also disclosed are methods for amplification of mechanical resonance in the disclosed bulk acoustic resonators and devices incorporating the bulk acoustic resonators.
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8.发明授权公开(公告)号：US11979140B2
公开(公告)日：2024-05-07
申请号：US18138953
申请日：2023-04-25
Applicant: SKYWORKS GLOBAL PTE. LTD.
Inventor： Nobufumi Matsuo , Kwang Jae Shin
CPC classification number: H03H9/173 , H03H3/02 , H03H9/0014 , H03H9/0211 , H03H9/13 , H03H9/564 , H03H9/706 , H03H2003/021
Abstract: A method of forming a film bulk acoustic wave resonator comprises depositing a bottom electrode on an upper surface of a layer of dielectric material disposed over a cavity defined between the layer of dielectric material and a substrate, depositing a seed layer of piezoelectric material on an upper surface of the bottom electrode, etching one or more openings through the seed layer of piezoelectric material, etching of the one or more openings including over-etching of the seed layer in an amount sufficient to damage portions of the upper surface of the bottom electrode exposed by etching of the one or more openings, and depositing a bulk film of the piezoelectric material on an upper surface of the seed layer, on a portion of the upper surface of bottom electrode including the damaged portions, and on a portion of the upper surface of the dielectric layer.
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公开(公告)号：US11979139B2
公开(公告)日：2024-05-07
申请号：US17415475
申请日：2019-12-19
Inventor： Noriyuki Watanabe , Hiroshi Nakamura , Shoji Kakio
Abstract: An elastic wave device that excites main vibration of an SH mode includes a piezoelectric layer formed from a piezoelectric material, a carrier substrate, and an IDT electrode formed on the piezoelectric layer. When a wavelength of an elastic wave, which is determined by an electrode cycle P of the IDT electrode, is represented by λ, the piezoelectric layer has a thickness of 0.15λ or more and 1.5λ or less. The carrier substrate has an acoustic anisotropy, and is arranged in a crystal orientation that reduces unnecessary vibrations of an SV mode and a vertical L-mode.
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公开(公告)号：US20240136997A1
公开(公告)日：2024-04-25
申请号：US18479969
申请日：2023-10-03
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Shodai HARAI
CPC classification number: H03H9/02157 , H03H9/02031 , H03H9/133 , H03H9/568 , H03H9/703
Abstract: An acoustic wave device includes a substrate, a piezoelectric layer provided on the substrate, at least one pair of comb-shaped electrodes provided on the piezoelectric layer, the at least one pair of comb-shaped electrodes including a plurality of electrode fingers having an average pitch equal to or greater than 0.5 times a thickness of the piezoelectric layer, a first insulating layer provided between the substrate and the piezoelectric layer, the first insulating layer having an acoustic velocity of a bulk wave higher than an acoustic velocity of a bulk wave in the piezoelectric layer, and a second insulating layer provided between the first insulating layer and the piezoelectric layer, the second insulating layer having an acoustic velocity of a bulk wave higher than the acoustic velocity of the bulk wave in the first insulating layer.
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