PREDICTION OF BATTERY FAILURE THROUGH THERMAL SIGNATURES

    公开(公告)号:US20250046891A1

    公开(公告)日:2025-02-06

    申请号:US18228453

    申请日:2023-07-31

    Abstract: The electrothermal “3 omega” technique is used to monitor thermal signatures on a battery cell during charge cycling. Changes in first and third harmonic voltages are measured during cycling and potential causes are identified. When a shorter-term moving average of the resistance thermography 3ω voltage on one or more of a plurality of frequency bands deviates from a longer-term moving average of the resistance thermography 3ω voltage by more than a predetermined threshold, starting and controlling an alarm process can include replacing the battery cell. This work shows the potential of the 3 omega technique to quickly detect signs of cell failure during operation.

    Acoustoelectric optomechanical devices

    公开(公告)号:US12204183B1

    公开(公告)日:2025-01-21

    申请号:US18071846

    申请日:2022-11-30

    Abstract: Devices employing Brillouin interactions that can be modified by acoustoelectric (AE) interactions, thereby enabling control over the devices' nonlinear optical susceptibility, are described. Modification of the phonon dissipation rates through application of quasistatic electric fields in the semiconductor can improve the performance of Brillouin photonic devices. These AE Brillouin interactions allow for local control of the phonon phase velocity and thus the Brillouin scattering frequencies, providing an electronic means to compensate for inhomogeneous broadening that occurs over large length scales. Moreover, these AE Brillouin interactions allow Brillouin scattering processes to employ phonon coherence lengths that can achieve parity with and even exceed those of the photons, enabling fully coherent three-wave parametric-like processes. Devices in accordance with various aspects of the present invention have simultaneously demonstrated, using these effects, both large optomechanical confinement and coupling, and AE coupling.

    TIN AS NUCLEAR SPIN QUBIT IN SILICON

    公开(公告)号:US20240413226A1

    公开(公告)日:2024-12-12

    申请号:US18240701

    申请日:2023-08-31

    Abstract: Coupling qubits is provided. The method comprises embedding a tin atom in a silicon substrate and forming a number of quantum dot electrodes over the silicon substrate. The quantum dot electrodes draw an electron from an electron source into the silicon substrate and performing an electron-nuclear controlled-phase gate operation by: moving the electron adiabatically toward the tin atom to achieve a specified level of hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise; holding the electron at the distance of the specified HIFI for a specified duration of time to represent an “on” state; and moving the electron adiabatically away from the tin atom to lower the HFI below the specified level and represent an “off” state

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