公开(公告)号：US12126320B2

公开(公告)日：2024-10-22

申请号：US17564813

申请日：2021-12-29

Applicant: QXONIX INC.

Inventor： Dariusz Burak ,  Kevin J. Grannen ,  Jack Lenell

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

CPC classification number: H03H9/02259 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/0207 ,  H03H9/02102 ,  H03H9/0211 ,  H03H9/02157 ,  H03H9/13 ,  H03H9/131 ,  H03H9/17 ,  H03H9/173 ,  H03H9/175 ,  H03H9/205 ,  H03H9/54 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/02165

Abstract: Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electrical may having a first filter band in a Super High Frequency (SHF) band or an Extremely High Frequency (EHF) band to facilitate compliance with a regulatory requirement or a standards setting organization specification. For example, the first electrical filter may comprise a notch filter having a notch band overlapping at least a portion of an Earth Exploration Satellite Service (EESS) band to facilitate compliance with a regulatory requirement or the standards setting organization specification for the Earth Exploration Satellite Service (EESS) band.

公开(公告)号：US20240305268A1

公开(公告)日：2024-09-12

申请号：US18271311

申请日：2022-12-20

Applicant: HEYUAN AIFO LIGHT COMMUNICATION TECHNOLOGY CO., LTD.

Inventor： Guoqiang Li

IPC: H03H9/17 ,  H03H3/02

CPC classification number: H03H9/175 ,  H03H3/02 ,  H03H9/176 ,  H03H2003/025

Abstract: A single crystal film bulk acoustic wave resonator includes a substrate layer, a Bragg reflection layer, a first bonding layer, a second bonding layer, a piezoelectric layer and an electrode layer; a width of the electrode layer is smaller than that of the piezoelectric layer. The resonator further includes a first silicon oxide layer and a second silicon oxide layer, which surround the first bonding layer and the second bonding layer respectively, and a plurality of first air holes horizontally arranged and a plurality of second air holes horizontally arranged are respectively formed in the first silicon oxide layer and the second silicon oxide layer. Each of the plurality of first air holes corresponds to and is communicated with a respective one of the plurality of second air holes. The piezoelectric layer is made of AlN or lithium niobate.

公开(公告)号：US12088278B2

公开(公告)日：2024-09-10

申请号：US17219525

申请日：2021-03-31

Applicant: Skyworks Global Pte. Ltd.

Inventor： Kwang Jae Shin ,  Jiansong Liu ,  Jong Duk Han ,  Jae Hyung Lee ,  Yiliu Wang ,  Yosuke Hamaoka ,  Alexandre Augusto Shirakawa ,  Benfeng Zhang

IPC: H03H9/205 ,  H03H3/02 ,  H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/54 ,  H03H9/56 ,  H04B1/40

CPC classification number: H03H9/205 ,  H03H3/02 ,  H03H3/04 ,  H03H9/02015 ,  H03H9/02086 ,  H03H9/173 ,  H03H9/175 ,  H03H9/54 ,  H03H9/564 ,  H03H9/568 ,  H04B1/40 ,  H03H2003/0442

Abstract: Aspects of this disclosure relate bulk acoustic wave resonators with a patterned mass loading layer at least contributing to a difference in mass loading between a main acoustically active region of the bulk acoustic wave resonator and a recessed frame region of the bulk acoustic wave resonator. Related methods of manufacturing can involve forming the patterned mass loading layer in the main acoustically active region and the recessed frame region in a common processing step such that the patterned mass loading layer has a higher density in the main acoustically active region than in the recessed frame region.

公开(公告)号：US12088272B2

公开(公告)日：2024-09-10

申请号：US17361046

申请日：2021-06-28

Applicant: MURATA MANUFACTURING CO., LTD

Inventor： Ventsislav Yantchev ,  Bryant Garcia ,  Viktor Plesski ,  Soumya Yandrapalli ,  Robert B. Hammond ,  Patrick Turner ,  Jesson John

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

CPC classification number: H03H9/02228 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/132 ,  H03H9/175 ,  H03H9/176 ,  H03H9/562 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/025

Abstract: Resonator devices are disclosed. An acoustic resonator device includes a piezoelectric plate having front and back surfaces, an acoustic Bragg reflector on the back surface, and an interdigital transducer (IDT) on the front surface. The acoustic Bragg reflector reflects a primary shear acoustic mode excited by the IDT in the piezoelectric plate over a frequency range including a resonance frequency and an anti-resonance frequency of the acoustic resonator device.

公开(公告)号：US12072396B2

公开(公告)日：2024-08-27

申请号：US17656761

申请日：2022-03-28

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Neville Sun ,  Xianfeng Lian ,  Huaihao Chen

IPC: G01R33/028 ,  H03H9/135 ,  H03H9/17

CPC classification number: G01R33/0286 ,  H03H9/135 ,  H03H9/175

Abstract: A solidly mounted resonator (SMR)-based magnetoelectric (ME) antenna comprises a substrate, a Bragg reflector disposed on the substrate, a magnetostrictive/piezoelectric ME composite element disposed on the Bragg reflector, a first electrically conductive contact and a second electrically conductive contact. The first contact is disposed between the Bragg reflector and the magnetostrictive/piezoelectric ME composite element and electrically coupled to a bottom surface of the magnetostrictive/piezoelectric ME composite element. The second contact is disposed on top of the magnetostrictive/piezoelectric ME composite element and electrically coupled to the top of the magnetostrictive/piezoelectric ME composite element. The magnetostrictive/piezoelectric ME composite element comprises a magnetorestrictive multilayer deposited on a piezoelectric layer. The magnetorestrictive multilayer produces an in-plane uniaxial magnetic anisotropy (UMA). The UMA is a twofold UMA that exhibits a symmetric radiation pattern.

公开(公告)号：US20240243723A1

公开(公告)日：2024-07-18

申请号：US18415521

申请日：2024-01-17

Applicant: Global Communication Semiconductors, LLC

Inventor： Romain Gerbe ,  Liping D. Hou ,  Shing-Kuo Wang ,  Yuefei Yang ,  Kun-Mao Pan ,  Andy Chien-Hsiang Chen

IPC: H03H9/17 ,  H03H9/02

CPC classification number: H03H9/173 ,  H03H9/02086 ,  H03H9/175

Abstract: A bulk acoustic resonator includes a stack structures, including a piezoelectric layer having a first side and an opposing second side; a first electrode disposed under the first side of the piezoelectric layer; a second electrode disposed over the second side of the piezoelectric layer; and a multistep structure with a bottom part having first dimensions disposed between the piezoelectric layer and second electrode and a second part having second dimensions, different from the first dimensions, disposed between the bottom part of the multistep structure and the second electrode. An active region of the stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode, and the multistep structure is arranged to provide destructive interference of lateral acoustic waves within the bulk acoustic resonator.

公开(公告)号：US20240213949A1

公开(公告)日：2024-06-27

申请号：US18596849

申请日：2024-03-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

CPC classification number: H03H9/02086 ,  H03H9/02031 ,  H03H9/02157 ,  H03H9/02228 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176

Abstract: An acoustic wave device includes a support, a piezoelectric layer including lithium niobate or lithium tantalate, and an interdigital transducer electrode including busbars and electrode fingers. An acoustic reflection portion overlaps a portion of the IDT electrode. d/p is about 0.5 or less. An intersecting region includes a central region and edge regions. Gap regions are located between the intersecting region and the busbars. At least one mass addition film is provided in at least one of the edge regions or the gap regions, where any two points, in an electrode finger facing direction, of a portion in which the mass addition film is located are first and second points, thicknesses of the mass addition film at at least a pair of the first point and the second point are different from each other.

公开(公告)号：US20240196753A1

公开(公告)日：2024-06-13

申请号：US18065538

申请日：2022-12-13

Applicant: Akoustis, Inc.

Inventor： Kamran Cheema ,  Abhay Saranswarup Kochhar ,  Ramakrishna Vetury ,  Daeho Kim

IPC: H10N39/00 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC classification number: H10N39/00 ,  H03H3/02 ,  H03H9/0547 ,  H03H9/173 ,  H03H9/175 ,  H03H2003/021 ,  H03H2003/025

Abstract: A method of forming a MEMS/integrated circuit structure can include forming a piezoelectric layer on a surface of a growth substrate, forming a first electrode on the piezoelectric layer, forming a support layer on the piezoelectric layer and the first electrode, bonding an upper surface of the support layer to an upper surface of an integrated circuit wafer to form a bonded interface therebetween, wherein the integrated circuit wafer includes a substrate, a plurality of first layers on the substrate, the plurality of first layers forming a front-end of line portion of the integrated circuit wafer having electronic semiconductor switching devices therein, and a plurality of second layers forming a back-end of line portion of the integrated circuit wafer including ohmic conductors ohmically coupling regions of the electronic semiconductor switching devices to an outer one of the second layers of the integrated circuit wafer positioned opposite the electronic semiconductor switching devices.

公开(公告)号：US11962283B2

公开(公告)日：2024-04-16

申请号：US18072994

申请日：2022-12-01

Applicant: Skyworks Solutions, Inc.

Inventor： Jie Zou ,  Jiansong Liu ,  Gong Bin Tang ,  Chih-Ming Lin ,  Chun Sing Lam

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

CPC classification number: H03H9/02228 ,  H03H9/02031 ,  H03H9/02062 ,  H03H9/02086 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/562

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

公开(公告)号：US11949399B2

公开(公告)日：2024-04-02

申请号：US17586709

申请日：2022-01-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ventsislav Yantchev

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

CPC classification number: H03H9/02228 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/132 ,  H03H9/175 ,  H03H9/176 ,  H03H9/562 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/025

Abstract: Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having front and back surfaces. An acoustic Bragg reflector is sandwiched between a surface of the substrate and the back surface of the piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT and the piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a primary acoustic mode within the piezoelectric plate. The acoustic Bragg reflector comprises alternating SiO2 and diamond layers and is configured to reflect the primary acoustic mode.