公开(公告)号：US11677372B2

公开(公告)日：2023-06-13

申请号：US17230729

申请日：2021-04-14

申请人： Akoustis, Inc.

发明人： Dae Ho Kim ,  Frank Zhiquang Bi ,  Mary Winters ,  Abhay Saranswarup Kochhar ,  Emad Mehdizadeh ,  Rohan W. Houlden ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H10N30/87 ,  H10N30/88 ,  H10N30/00 ,  H10N30/85 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H03H9/02 ,  H01L41/047 ,  H01L41/053 ,  H01L41/08 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337

CPC分类号： H03H3/02 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/053 ,  H01L41/081 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US11671067B2

公开(公告)日：2023-06-06

申请号：US16822689

申请日：2020-03-18

申请人： Akoustis, Inc.

发明人： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC分类号： H01L41/047 ,  H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H01L41/337 ,  H01L41/317 ,  H01L41/29 ,  H01L41/23 ,  H01L41/18 ,  H01L41/08 ,  H01L41/053 ,  H03H9/54 ,  H01L41/312

CPC分类号： H03H3/02 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/053 ,  H01L41/081 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H01L41/0805 ,  H01L41/312 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

公开(公告)号：US20200013948A1

公开(公告)日：2020-01-09

申请号：US16513143

申请日：2019-07-16

申请人： Akoustis, Inc.

发明人： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters

IPC分类号： H01L41/316 ,  H03H3/02 ,  H01L41/187 ,  H01L41/053 ,  H01J37/34 ,  C23C14/02 ,  C23C14/34 ,  C23C14/06

摘要： A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

公开(公告)号：US20240258991A1

公开(公告)日：2024-08-01

申请号：US18160877

申请日：2023-01-27

申请人： Akoustis, Inc.

发明人： Kenneth Fallon ,  Carlos R. Padilla ,  Mary Winters ,  Robert Charles Dry ,  Ethan Gram ,  Westbrook Hoose

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H03H9/105 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/173

摘要： A wafer including an array of bulk acoustic wave resonator devices can include a first bulk acoustic wave resonator device on the wafer, the first bulk acoustic wave resonator device including a passivation layer on a piezoelectric layer, a second bulk acoustic wave resonator device on the wafer directly adjacent to the first bulk acoustic wave resonator device, the second bulk acoustic wave resonator device including the passivation layer and the piezoelectric layer, a wall layer on the wafer forming first and second wall cavity structures that extend around the first and second bulk acoustic wave resonator devices, respectively, a capping layer extending over the wall layer to cover the first and second wall cavity structures that include the first and second bulk acoustic wave resonator devices, respectively, a metallization layer coupling together bulk acoustic wave resonators included in the first or second bulk acoustic wave resonator device and a pillar that protrudes vertically from the metallization layer to contact the cap layer.

公开(公告)号：US20230336151A1

公开(公告)日：2023-10-19

申请号：US18339939

申请日：2023-06-22

申请人： Akoustis, Inc.

发明人： Dae Ho Kim ,  Mary Winters ,  Zhiqiang Bi

IPC分类号： H03H9/13 ,  H03H9/02 ,  H03H9/54 ,  H03H9/17

CPC分类号： H03H9/132 ,  H03H9/02157 ,  H03H9/131 ,  H03H9/547 ,  H03H9/171 ,  H03H9/02015

摘要： A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

公开(公告)号：US20230253943A1

公开(公告)日：2023-08-10

申请号：US18303163

申请日：2023-04-19

申请人： Akoustis, Inc.

发明人： Dae Ho KIM ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/02 ,  H03H9/05 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/87 ,  H10N30/00

CPC分类号： H03H3/02 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/177 ,  H03H9/547 ,  H03H9/175 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/875 ,  H10N30/877 ,  H10N30/10513 ,  Y10T29/42 ,  H03H2003/025 ,  H03H2003/021

摘要： A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

公开(公告)号：US11581866B2

公开(公告)日：2023-02-14

申请号：US16990638

申请日：2020-08-11

申请人： Akoustis, Inc.

发明人： Jeffrey B. Shealy ,  Mary Winters ,  Craig Moe

IPC分类号： H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H03H9/02 ,  H01L41/337 ,  H01L41/317 ,  H01L41/29 ,  H01L41/23 ,  H01L41/18 ,  H01L41/08 ,  H01L41/053 ,  H01L41/047 ,  H03H9/54 ,  H01L41/312

摘要： An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

公开(公告)号：US20220182034A1

公开(公告)日：2022-06-09

申请号：US17514590

申请日：2021-10-29

申请人： Akoustis, Inc.

发明人： Craig Moe ,  Jeffrey M. Leathersich ,  Dae Ho Kim ,  Zhiqiang Bi ,  Mary Winters

IPC分类号： H03H9/02 ,  H03H3/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17

摘要： A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.

公开(公告)号：US10979022B2

公开(公告)日：2021-04-13

申请号：US16019267

申请日：2018-06-26

申请人： Akoustis, Inc.

发明人： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David Aichele

IPC分类号： H03H9/60 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56 ,  H01L41/187 ,  H01L41/047 ,  H01L27/20 ,  H01L41/29 ,  H03H9/00 ,  H03H9/58 ,  H03H3/02 ,  H01L41/332

摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11646719B2

公开(公告)日：2023-05-09

申请号：US17886149

申请日：2022-08-11

申请人： AKOUSTIS, INC.

发明人： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David M. Aichele

IPC分类号： H03H9/70 ,  H03H9/02 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H03H9/00 ,  H03H9/05

CPC分类号： H03H9/703 ,  H03H3/02 ,  H03H9/0095 ,  H03H9/02031 ,  H03H9/02118 ,  H03H9/205 ,  H03H9/542 ,  H03H9/581 ,  H03H9/605 ,  H03H9/0523 ,  H03H9/0533 ,  H03H2003/023 ,  H03H2003/025

摘要： An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.