公开(公告)号：US20230132534A1

公开(公告)日：2023-05-04

申请号：US17693459

申请日：2022-03-14

申请人： National Central University

发明人： Jeng-Rong Ho ,  Chih-Kuang Lin ,  Pi-Cheng Tung

IPC分类号： H01L41/332 ,  H03B5/32 ,  H01L41/187 ,  H01L41/338

摘要： An oscillator frequency modulation method includes: providing a piezoelectric material having a surface and an interior; and performing a pattern process on the piezoelectric material by a laser. A patterned processing zone is formed on the surface and/or in the interior of the piezoelectric material. The pattern process may be a material removal and/or a material modification. Therefore, without changing the appearance of the piezoelectric material, the pattern process on the piezoelectric material through the laser can accurately adjust the frequency of the oscillator and block unnecessary mode at the same time. An oscillator piezoelectric structure with frequency modulation is also provided.

公开(公告)号：US11631802B2

公开(公告)日：2023-04-18

申请号：US16677053

申请日：2019-11-07

申请人： Headway Technologies, Inc.

发明人： Vignesh Sundar ,  Yi Yang ,  Dongna Shen ,  Zhongjian Teng ,  Jesmin Haq ,  Sahil Patel ,  Yu-Jen Wang ,  Tom Zhong

IPC分类号： H01L43/00 ,  H01L41/47 ,  H01L41/047 ,  H01L41/332 ,  H01L41/06 ,  H01L41/053 ,  H01L41/20

摘要： A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

公开(公告)号：US20230102578A1

公开(公告)日：2023-03-30

申请号：US17953852

申请日：2022-09-27

申请人： SEIKO EPSON CORPORATION

发明人： Keiichi YAMAGUCHI ,  Hiyori SAKATA ,  Shigeru SHIRAISHI ,  Ryuta NISHIZAWA

IPC分类号： H01L41/332 ,  H01L41/29

摘要： A method of manufacturing a vibration element includes: a first protective film forming step of forming a first protective film on a first substrate surface of a crystal substrate; a first dry etching step of dry-etching the crystal substrate via the first protective film; a second protective film forming step of forming a second protective film on a second substrate surface of the crystal substrate; and a second dry etching step of dry-etching the crystal substrate via the second protective film. A relationship of T1

公开(公告)号：US20230092374A1

公开(公告)日：2023-03-23

申请号：US17948101

申请日：2022-09-19

申请人： Skyworks Solutions, Inc.

发明人： You Qian ,  Rakesh Kumar ,  Guofeng Chen

IPC分类号： H04R17/02 ,  H01L41/29 ,  H01L41/316 ,  H01L41/332 ,  H04R31/00

摘要： A method for making a piezoelectric microelectromechanical systems (MEMS) microphone is provided, comprising depositing a piezoelectric film layer onto a substrate; selectively etching the piezoelectric film layer to define lines; removing the substrate to define a cavity; and breaking the piezoelectric film layer along the lines, such that the microphone has at least two cantilevered beams. The piezoelectric microelectromechanical systems (MEMS) microphone is also provided.

公开(公告)号：US11600765B2

公开(公告)日：2023-03-07

申请号：US17137220

申请日：2020-12-29

申请人： STMICROELECTRONICS S.r.l.

发明人： Domenico Giusti ,  Carlo Luigi Prelini ,  Marco Ferrera ,  Carla Maria Lazzari ,  Luca Seghizzi ,  Nicolo′ Boni ,  Roberto Carminati ,  Fabio Quaglia

IPC分类号： H01L41/09 ,  B01L3/00 ,  F16K99/00 ,  G05D7/06 ,  H01L41/22 ,  H01L41/332 ,  H01L41/08 ,  B81B7/00

摘要： The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.

公开(公告)号：US11590536B2

公开(公告)日：2023-02-28

申请号：US16274477

申请日：2019-02-13

申请人： SONICMEMS (ZHENGZHOU) TECHNOLOGY CO., LTD. ,  PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL

发明人： Yu-Feng Jin ,  Sheng-Lin Ma ,  Qian-Cheng Zhao ,  Yi-Hsiang Chiu ,  Huan Liu ,  Hung-Ping Lee ,  Dan Gong

IPC分类号： B06B3/00 ,  B06B1/06 ,  H01L41/083 ,  H01L41/08 ,  H01L41/277 ,  H01L41/332 ,  H01L41/337 ,  H01L41/338 ,  G06K9/00 ,  G06V40/13

摘要： A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

公开(公告)号：US20230020694A1

公开(公告)日：2023-01-19

申请号：US17865052

申请日：2022-07-14

申请人： SEIKO EPSON CORPORATION

发明人： Hiyori Sakata ,  Ryuta Nishizawa ,  Shigeru Shiraishi ,  Keiichi Yamaguchi ,  Takuro Kobayashi

IPC分类号： H01L41/332

摘要： A method for manufacturing a vibrator device includes a first dry etching step of dry-etching a quartz crystal substrate having a first surface and a second surface from the side facing the first surface to form first grooves and part of the outer shapes of a first vibrating arm and a second vibrating arm, a second dry etching step of dry-etching the quartz crystal substrate from the side facing the second surface to form second grooves and part of the outer shapes of the first vibrating arm and the second vibrating arm, and thereafter, a wet etching step of wet-etching the side surfaces of the first vibrating arm and the second vibrating arm.

公开(公告)号：US20230006127A1

公开(公告)日：2023-01-05

申请号：US17779473

申请日：2020-11-24

申请人： AITA BIO INC.

发明人： Jacob Menture ,  Peter Smeys ,  Dilan Casanovas Mack ,  Laurence Heads

IPC分类号： H01L41/09 ,  H01L41/35 ,  H01L41/332

摘要： A method is disclosed of fabricating a MEMS device that includes one or more wafers configured as pump or valve. The pump or valve includes an inlet port to receive fluid and an outlet port to release the fluid within the pump or valve. The method comprises growing silicon dioxide on a silicon layer of the one or more wafers to form a silicon dioxide layer on the silicon layer, depositing silicon nitride on the silicon dioxide layer of the one or more wafers to form a silicon nitride layer on the silicon dioxide layer, spinning a front side to create a pattern thereon defining an area for the pump or valve, dry etching the one or more wafers at the area for the pump or valve to remove the silicon dioxide and silicon nitride layers to define an opening for the pump or valve.

公开(公告)号：US11482986B2

公开(公告)日：2022-10-25

申请号：US16722125

申请日：2019-12-20

申请人： Qorvo US, Inc.

发明人： Casey Kirkpatrick ,  Andrew P. Ritenour

IPC分类号： H03H9/25 ,  H03H3/08 ,  H01L41/332 ,  H03H9/145 ,  H01L41/187 ,  H01L41/29 ,  H01L41/047 ,  H03H9/64

摘要： Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material layer forms a pair of interdigitated transducers to provide a surface wave acoustic (SAW) device. The SAW device of the present disclosure is usable to realize SAW-based filters for wireless communication equipment.

公开(公告)号：US20220308336A1

公开(公告)日：2022-09-29

申请号：US17617874

申请日：2020-05-22

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Hirofumi CHIBA

IPC分类号： G02B26/08 ,  H01L41/332 ,  H01L41/277 ,  H01L41/09

摘要： A manufacturing method for an optical deflector, in which a piezoelectric film layer having a uniform film thickness is formed on a substrate layer, includes forming a cavity to open to a SiO2 layer side in a forming region of an outside piezoelectric actuator by etching an SOI wafer from the SiO2 layer side, covering an exposed surface of the cavity with a SiO2 layer, and joining the SiO2 layer of the SOI wafer and a support layer of an SOI wafer to manufacture an SOI wafer in which the cavity is enclosed. Next, after a recess is formed on a back side of the SOI wafer, anisotropic dry etching is carried out from the back side in a depth direction of the recess to remove the SiO2 layer.