公开(公告)号：US20240258991A1

公开(公告)日：2024-08-01

申请号：US18160877

申请日：2023-01-27

申请人： Akoustis, Inc.

发明人： Kenneth Fallon ,  Carlos R. Padilla ,  Mary Winters ,  Robert Charles Dry ,  Ethan Gram ,  Westbrook Hoose

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H03H9/105 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/173

摘要： A wafer including an array of bulk acoustic wave resonator devices can include a first bulk acoustic wave resonator device on the wafer, the first bulk acoustic wave resonator device including a passivation layer on a piezoelectric layer, a second bulk acoustic wave resonator device on the wafer directly adjacent to the first bulk acoustic wave resonator device, the second bulk acoustic wave resonator device including the passivation layer and the piezoelectric layer, a wall layer on the wafer forming first and second wall cavity structures that extend around the first and second bulk acoustic wave resonator devices, respectively, a capping layer extending over the wall layer to cover the first and second wall cavity structures that include the first and second bulk acoustic wave resonator devices, respectively, a metallization layer coupling together bulk acoustic wave resonators included in the first or second bulk acoustic wave resonator device and a pillar that protrudes vertically from the metallization layer to contact the cap layer.