公开(公告)号：US20240352575A1

公开(公告)日：2024-10-24

申请号：US18306111

申请日：2023-04-24

申请人： Applied Materials, Inc.

发明人： Timothy J. Miller ,  Vikram M. Bhosle

IPC分类号： C23C14/34 ,  C23C14/06 ,  H01J37/34

CPC分类号： C23C14/3492 ,  C23C14/0682 ,  C23C14/0694 ,  C23C14/345 ,  H01J37/347 ,  H01L21/26506 ,  H01J2237/2001 ,  H01J2237/332

摘要： Disclosed herein are approaches for treating a film layer of a semiconductor device to modify an etch resistance of the film later. In one approach, a method may include forming a first film over a substrate base, depositing a second film over the first film, and introducing an inert species into the second film while the second film is deposited over the first film, wherein the inert species increases an etch-resistance of a first portion of the first film. The method may further include removing the second film by stopping deposition of the second film while continuing to introduce the inert species into the second film.

公开(公告)号：US12119225B2

公开(公告)日：2024-10-15

申请号：US17841270

申请日：2022-06-15

申请人： KV Materials Co., Ltd.

发明人： Shinhyuk Kang ,  Jeonghyun Moon ,  Kangmin Ok

IPC分类号： H01L21/02 ,  C23C14/34 ,  H01J37/34 ,  H01L29/786

CPC分类号： H01L21/02631 ,  C23C14/3414 ,  H01J37/3426 ,  H01L21/02565 ,  H01L29/7869 ,  C23C14/3407

摘要： An oxide semiconductor sputtering target used in a sputtering process to deposit an active layer of a TFT. The oxide semiconductor sputtering target is formed from a material based on a composition of In, Sn, Ga, Zn, and O. The material contains gallium oxide, tin oxide, zinc oxide, and indium oxide. The In, Sn, Ga, and Zn contents are in ranges of 60% to 80%, 0.5% to 8%, 5% to 15%, and 10% to 30% by weight with respect to the weight of In+Sn+Ga+Zn, respectively. A method of fabricating a TFT includes depositing an active layer using the oxide semiconductor sputtering target. Such a TFT is used in a liquid crystal display (LCD), an organic light-emitting display, an electroluminescence display, and the like.

公开(公告)号：US12106949B2

公开(公告)日：2024-10-01

申请号：US17598473

申请日：2019-09-20

申请人： JX Nippon Mining & Metals Corporation

发明人： Yuki Furuya

IPC分类号： H01J37/34 ,  B22F3/10 ,  C22C5/04 ,  C22C19/07 ,  C22C30/00 ,  C22C32/00 ,  C23C14/34

CPC分类号： H01J37/3429 ,  B22F3/10 ,  C22C5/04 ,  C22C19/07 ,  C22C30/00 ,  C22C32/0015 ,  C23C14/3414 ,  B22F2301/15 ,  B22F2301/25 ,  C22C2202/02

摘要： Provided is a sputtering target capable of reducing generation of particles, and a method for producing the same. The sputtering target includes: 10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr, as metal components; and at least B6O as an oxide component.

公开(公告)号：US20240304430A1

公开(公告)日：2024-09-12

申请号：US18666251

申请日：2024-05-16

申请人： Applied Materials, Inc.

发明人： Mehdi Vaez-Iravani ,  Todd J. Egan ,  Kyle Ross Tantiwong

IPC分类号： H01J37/32 ,  C23C14/34 ,  C23C14/54 ,  C23C16/44 ,  C23C16/52 ,  G01N21/01 ,  H01J37/34

CPC分类号： H01J37/32972 ,  C23C14/34 ,  C23C14/54 ,  C23C16/4401 ,  C23C16/52 ,  G01N21/01 ,  H01J37/32477 ,  H01J37/3476 ,  H01J2237/3321

摘要： Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.

公开(公告)号：US12080527B2

公开(公告)日：2024-09-03

申请号：US17626244

申请日：2020-07-14

申请人： SOLERAS ADVANCED COATINGS BV

发明人： Wilmert De Bosscher ,  Ivan Van De Putte ,  Niek Dewilde

IPC分类号： H01J37/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

CPC分类号： H01J37/32752 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/50 ,  C23C14/505 ,  H01J37/3405 ,  H01J37/347 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/3323

摘要： A movement system is provided for moving a non-flat substrate across a sputter flux distribution without circumferentially exposing the non-flat substrate to the sputter flux distribution. The movement system is arranged for a first movement of translationally transporting the non-flat substrate along the sputter flux distribution, and a second movement of translating and/or rotating the non-flat substrate with respect to the sputter flux distribution.

公开(公告)号：US12077850B2

公开(公告)日：2024-09-03

申请号：US17395186

申请日：2021-08-05

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Kuo-Lung Hou ,  Wei-Chen Liao ,  Ming-Hsien Lin

IPC分类号： C23C14/54 ,  C23C14/14 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/54 ,  C23C14/14 ,  C23C14/35 ,  H01J37/3476

摘要： A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

公开(公告)号：US12077849B2

公开(公告)日：2024-09-03

申请号：US17737061

申请日：2022-05-05

申请人： IonQuest Corp.

发明人： Bassam Hanna Abraham ,  Roman Chistyakov

IPC分类号： C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285

CPC分类号： C23C14/35 ,  C23C14/3407 ,  C23C14/3485 ,  H01J37/3405 ,  H01J37/3423 ,  H01J37/3458 ,  H01L21/2855

摘要： A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.

公开(公告)号：US20240290593A1

公开(公告)日：2024-08-29

申请号：US18214498

申请日：2023-06-26

申请人： Applied Materials, Inc.

发明人： Cory LAFOLLETT ,  Jie J. ZHANG

IPC分类号： H01J37/34 ,  C23C14/35

CPC分类号： H01J37/3452 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3455 ,  H01J2237/332

摘要： A magnet assembly for a magnetron of a processing chamber includes a support member. A plurality of magnetic tracks is mounted to the support member. Each magnetic track includes a pair of magnetic poles. A partial magnetic track is mounted to the support member. The partial magnetic track includes a single unpaired magnetic pole. The partial magnetic track is mounted proximal to a center of rotation of the support member.

公开(公告)号：US20240258087A1

公开(公告)日：2024-08-01

申请号：US18535774

申请日：2023-12-11

申请人： INTEVAC, INC.

发明人： Samuel D. Harkness, IV ,  Thomas P. Nolan ,  Jae Ha Choi ,  Alexander Vassilievich Demtchouk ,  Terry Bluck

IPC分类号： H01J37/34 ,  C23C14/35 ,  C23C14/50

CPC分类号： H01J37/3452 ,  C23C14/35 ,  C23C14/50 ,  H01J37/3423 ,  H01J2237/002 ,  H01J2237/332

摘要： Sputtering system having cylindrical target with sputtering material on exterior surface; magnet arrangement inside the cylindrical target, having first set of magnets arranged on straight row, each having first pole facing interior wall of the target and second pole facing away from the interior wall, second set having plurality of magnets arranged in obround shape around the first set, each magnet having first pole facing away from the interior wall and second pole facing the interior wall; a keeper plate between the first set of magnets and the second set of magnets, such that straight line passing through an axis connecting the first pole and the second pole of a magnet from the second set intercepts the keeper plate prior to reaching the interior wall; and a cover.

公开(公告)号：US12051577B2

公开(公告)日：2024-07-30

申请号：US18311491

申请日：2023-05-03

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Masahiro Fujita ,  Koji Nishioka

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3417 ,  C23C14/3407 ,  H01J37/3432 ,  H01J37/3435 ,  H01J2237/332

摘要： A sputtering target comprising:



a backing plate; and
a target material bonded via a bonding material to a bonding region of the backing plate, wherein
a bonding area of a bonding portion between the target material and the backing plate accounts for 97% or more of the area of the bonding region, and wherein
a maximum defect area of portions without the bonding material present between the target material and the backing plate accounts for 0.6% or less of the area of the bonding region.




The sputtering target enables manufacturing of the sputtering target in which the target material is hardly peeled off during sputtering.