公开(公告)号：US12080527B2

公开(公告)日：2024-09-03

申请号：US17626244

申请日：2020-07-14

申请人： SOLERAS ADVANCED COATINGS BV

发明人： Wilmert De Bosscher ,  Ivan Van De Putte ,  Niek Dewilde

IPC分类号： H01J37/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

CPC分类号： H01J37/32752 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/50 ,  C23C14/505 ,  H01J37/3405 ,  H01J37/347 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/3323

摘要： A movement system is provided for moving a non-flat substrate across a sputter flux distribution without circumferentially exposing the non-flat substrate to the sputter flux distribution. The movement system is arranged for a first movement of translationally transporting the non-flat substrate along the sputter flux distribution, and a second movement of translating and/or rotating the non-flat substrate with respect to the sputter flux distribution.

公开(公告)号：US09892927B2

公开(公告)日：2018-02-13

申请号：US15443151

申请日：2017-02-27

申请人： Texas Instruments Incorporated

发明人： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC分类号： H01J37/00 ,  H01L21/00 ,  H01L21/28 ,  H01L21/02 ,  H01L29/51 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455

CPC分类号： H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

公开(公告)号：US09758864B2

公开(公告)日：2017-09-12

申请号：US14867196

申请日：2015-09-28

申请人： The Boeing Company

发明人： Marvi A. Matos ,  Liam S. Pingree

IPC分类号： C23C14/56 ,  C23C14/22 ,  C23C14/46 ,  H01J37/32

CPC分类号： C23C14/56 ,  C23C14/228 ,  C23C14/46 ,  H01J37/32357 ,  H01J37/32752 ,  H01J37/32761 ,  H01J37/32825 ,  H01J37/32889

摘要： An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

公开(公告)号：US20170170022A1

公开(公告)日：2017-06-15

申请号：US15443151

申请日：2017-02-27

申请人： Texas Instruments Incorporated

发明人： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC分类号： H01L21/28 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458 ,  H01L21/02 ,  H01L29/51

CPC分类号： H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

公开(公告)号：US20170167019A1

公开(公告)日：2017-06-15

申请号：US15364418

申请日：2016-11-30

申请人： Tokyo Electron Limited

发明人： Kazuhide HASEBE ,  Shigehiro MIURA

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/52 ,  C23C16/458 ,  H01L21/02 ,  C23C16/505

CPC分类号： C23C16/45544 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32752 ,  H01J37/32899 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： A plasma processing apparatus includes a process chamber, and a susceptor provided in the process chamber and having a substrate receiving area formed in a top surface thereof. A first plasma generator is configured to perform a first plasma process on a first predetermined area in the substrate receiving area. A first radio frequency power source is connected to the first plasma generator and configured to supply first radio frequency power to the first plasma generator. A second plasma generator is configured to perform a second plasma process on a second predetermined area in the substrate receiving area and to be able to change the second predetermined area. A second radio frequency power source is connected to the second plasma generator and configured to supply second radio frequency power to the second plasma generator.

公开(公告)号：US20170133283A1

公开(公告)日：2017-05-11

申请号：US14934624

申请日：2015-11-06

申请人： Lam Research Corporation

发明人： Ian KENWORTHY

IPC分类号： H01L21/66 ,  H01L21/67 ,  G05B15/02 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01L22/20 ,  G05B15/02 ,  H01J37/32458 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32752 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32908 ,  H01J37/3299 ,  H01J2237/20264 ,  H01J2237/24564 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

摘要： An apparatus for use in a processing chamber is provided. A consumable is within the processing chamber. A scale is positioned to measure a mass of the consumable.

公开(公告)号：US09611542B2

公开(公告)日：2017-04-04

申请号：US14702100

申请日：2015-05-01

申请人： Linco Technology Co., Ltd.

发明人： Cheng-Peng Yeh ,  Huei-Chia Su ,  Chung-Yu Yeh ,  Tsung-Wei Chang ,  Yi-Yuan Huang ,  Wan-Yu Huang ,  Mu-Sen Lu

IPC分类号： B05C9/12 ,  C23C14/54 ,  C23C16/458 ,  H01L23/427 ,  B05C9/14 ,  C23C14/35 ,  B05C11/10

CPC分类号： C23C14/541 ,  B05C9/14 ,  B05C11/1021 ,  C23C14/35 ,  C23C14/56 ,  C23C16/4586 ,  H01J37/32752 ,  H01L21/67109 ,  H01L21/6776 ,  H01L23/427

摘要： A film deposition system includes a substrate carrier, a film deposition device, a transport device and a cooling device. The substrate carrier includes a carrier body that defines an isolated space therein, and a phase transition material that is filled into the isolated space and that has a melting point ranging between 18° C. and 95° C. The phase transition material is capable of absorbing thermal energy from the carrier body as latent heat to change the phase of the phase transition material from solid to liquid. The cooling device is configured to absorb thermal energy from the substrate carrier so as to change the phase of the phase transition material from liquid to solid.

公开(公告)号：US09583312B2

公开(公告)日：2017-02-28

申请号：US14100224

申请日：2013-12-09

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Yohei Yamazawa ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01J37/321 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

摘要： A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

摘要翻译： 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，其被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。

公开(公告)号：US09337044B2

公开(公告)日：2016-05-10

申请号：US14858279

申请日：2015-09-18

申请人： Texas Instruments Incorporated

发明人： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/677 ,  H01L21/324 ,  H01L29/423 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

公开(公告)号：US20160097124A1

公开(公告)日：2016-04-07

申请号：US14793562

申请日：2015-07-07

申请人： Samsung Display Co., Ltd.

发明人： Myungsoo Huh ,  Dongkyun Ko ,  Choelmin Jang ,  Sungchul Kim ,  Inkyo Kim ,  Cheollae Roh

IPC分类号： C23C16/455 ,  C23C16/50

CPC分类号： C23C16/50 ,  C23C16/45563 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32752 ,  H01J37/32899 ,  H01L51/5256

摘要： An apparatus and a method of manufacturing a display apparatus are disclosed. In one aspect, the apparatus includes a chamber and an inorganic layer forming nozzle unit formed in the chamber and configured to form at least one inorganic layer. The apparatus also includes an organic layer forming nozzle unit formed in the chamber and configured to form at least one organic layer, wherein the organic layer forming nozzle unit is arranged substantially in line with the inorganic layer forming nozzle unit. The apparatus further includes a separating nozzle unit formed between the inorganic layer forming nozzle unit and the organic layer forming nozzle unit and configured to spray an inert gas.

摘要翻译： 公开了一种制造显示装置的装置和方法。 一方面，该装置包括腔室和形成在腔室中并构造成形成至少一个无机层的无机层形成喷嘴单元。 所述设备还包括形成在所述室中并构造成形成至少一个有机层的有机层形成喷嘴单元，其中所述有机层形成喷嘴单元基本上与所述无机层形成喷嘴单元一致。 该装置还包括形成在无机层形成喷嘴单元和有机层形成喷嘴单元之间的分离喷嘴单元，并且构造成喷射惰性气体。