公开(公告)号：US09991360B2

公开(公告)日：2018-06-05

申请号：US13380150

申请日：2010-06-28

申请人： James R. Shealy ,  Richard Brown

发明人： James R. Shealy ,  Richard Brown

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/318 ,  H01L29/20 ,  H01L29/778 ,  A61K38/48 ,  C12N9/64 ,  H01L23/29 ,  H01L23/31 ,  H01L29/423 ,  A61K38/00

CPC分类号： H01L29/7787 ,  H01L21/02145 ,  H01L21/02271 ,  H01L21/318 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.

公开(公告)号：US09633954B2

公开(公告)日：2017-04-25

申请号：US15056615

申请日：2016-02-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shin-Puu Jeng ,  Clinton Chao ,  Szu Wei Lu

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L21/302 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/52 ,  H01L21/56 ,  H01L21/78 ,  H01L23/58

CPC分类号： H01L23/562 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/302 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3185 ,  H01L21/563 ,  H01L21/78 ,  H01L23/52 ,  H01L23/585 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 μm, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.

公开(公告)号：US09385013B2

公开(公告)日：2016-07-05

申请号：US15011896

申请日：2016-02-01

申请人： Hitachi-Kokusai Electric Inc.

发明人： Yushin Takasawa ,  Hajime Karasawa ,  Yoshiro Hirose

IPC分类号： H01L21/02 ,  H01L21/318 ,  H01L21/314 ,  H01L21/67 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/46 ,  C23C16/02

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

摘要翻译： 提供了一种技术，包括通过执行预定次数的循环来形成膜。 所述循环包括：（a）通过将含有所述第一元素的气体供应到容纳所述基板的处理容器中，在所述基板上形成包括所述第一元素并具有小于一个原子层的厚度的不连续的第一层; 和（b）通过将含有第二元素的气体供给处理容器来形成包括第一元素和第二元素的第二层，以在第一层由含有第二元素的气体进行改性反应的条件下改性第一层 元素不饱和。

公开(公告)号：US09384970B2

公开(公告)日：2016-07-05

申请号：US14679128

申请日：2015-04-06

申请人： Hitachi-Kokusai Electric Inc.

发明人： Yushin Takasawa ,  Hajime Karasawa ,  Yoshiro Hirose

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L21/314 ,  H01L21/318 ,  C23C16/46 ,  C23C16/52 ,  C23C16/50 ,  C23C14/54 ,  C23C28/00

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

摘要翻译： 提供了一种技术，包括在基板上形成膜，该膜包括第一元件和与第一元件不同的第二元件，通过执行预定次数的周期。 该循环包括：在基板的表面上的分子的化学吸附的条件下，通过将含有第一元素的气体供给到基板，形成包含构成含有第一元素的气体的分子的不连续化学吸附层的第一层 不饱和 以及通过将含有所述第二元素的气体供给到所述基板而形成包含所述第一元素和所述第二元素的第二层，以在所述第一层由含有所述第二元素的气体的改性反应不饱和的条件下改性所述第一层 。

公开(公告)号：US09337044B2

公开(公告)日：2016-05-10

申请号：US14858279

申请日：2015-09-18

申请人： Texas Instruments Incorporated

发明人： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/677 ,  H01L21/324 ,  H01L29/423 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

公开(公告)号：US09331166B2

公开(公告)日：2016-05-03

申请号：US14519549

申请日：2014-10-21

申请人： International Business Machines Corporation

发明人： Emre Alptekin ,  Sameer H. Jain ,  Viraj Y. Sardesai ,  Cung D. Tran ,  Reinaldo A. Vega

IPC分类号： H01L29/78 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318 ,  H01L21/263 ,  H01L21/314 ,  H01L29/417 ,  H01L21/336

CPC分类号： H01L29/4983 ,  H01L21/02266 ,  H01L21/02639 ,  H01L21/263 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/76224 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7851

摘要： Angled directional ion beams are directed to sidewalls of a gate structure that straddles at least one semiconductor fin. The directions of the angled directional ion beams are contained within a vertical plane that is parallel to the sidewalls of the at least one semiconductor. A pair of gate spacers are formed on sidewalls of the gate structure by accumulation of the deposited dielectric material from the angled directional ion beams and without use of an anisotropic etch, while the sidewalls of the semiconductor fins parallel to the directional ion beams remain physically exposed. A selective epitaxy process can be performed to form raised active regions by growing a semiconductor material from the sidewalls of the semiconductor fins.

公开(公告)号：US09318316B2

公开(公告)日：2016-04-19

申请号：US12625712

申请日：2009-11-25

申请人： Yushin Takasawa ,  Hajime Karasawa ,  Yoshiro Hirose

发明人： Yushin Takasawa ,  Hajime Karasawa ,  Yoshiro Hirose

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L21/314 ,  H01L21/318 ,  C23C16/46 ,  C23C16/52 ,  C23C16/50

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided are a method of manufacturing a semiconductor device and a substrate processing apparatus. The method includes forming a thin film having a predetermined thickness and a predetermined composition on the substrate, the thin film including a first element and a second element different from the first element, by repeating a cycle a plurality of times, the cycle including: (a) forming a first layer including the first element and having a thickness of several atomic layers or less on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate under a condition where a chemical vapor deposition (CVD) reaction is caused; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer without saturating a modifying reaction of the first layer by the gas containing the second element.

摘要翻译： 提供一种半导体器件和衬底处理设备的制造方法。 该方法包括在基板上形成具有预定厚度和预定组成的薄膜，该薄膜包括第一元件和与第一元件不同的第二元件，多次重复循环，该循环包括：（ a）通过在化学气相沉积（CVD）反应的条件下将含有第一元素的气体供应到容纳基板的处理容器中，在基板上形成包括第一元素并具有几个原子层或更小的厚度的第一层 是造成的 和（b）通过将含有第二元素的气体供给到处理容器中来形成包含第一元素和第二元素的第二层，以修饰第一层，而不会使含有第二元素的气体饱和第一层的改性反应。

公开(公告)号：US09312123B2

公开(公告)日：2016-04-12

申请号：US14679180

申请日：2015-04-06

申请人： Hitachi-Kokusai Electric Inc.

发明人： Yushin Takasawa ,  Hajime Karasawa ,  Yoshiro Hirose

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L21/314 ,  H01L21/318 ,  C23C16/46 ,  C23C16/52 ,  C23C16/50

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

摘要翻译： 提供了一种技术，包括通过执行预定次数的循环来形成膜。 所述循环包括：（a）通过将含有所述第一元素的气体供应到容纳所述基板的处理容器中，在所述基板上形成包括所述第一元素并具有小于一个原子层的厚度的不连续的第一层; 和（b）通过将含有第二元素的气体供给处理容器来形成包括第一元素和第二元素的第二层，以在第一层由含有第二元素的气体进行改性反应的条件下改性第一层 元素不饱和。

公开(公告)号：US09048180B2

公开(公告)日：2015-06-02

申请号：US11383721

申请日：2006-05-16

申请人： Jiong-Ping Lu ,  Periannan Chidambaram ,  Srinivasan Chakravarthi

发明人： Jiong-Ping Lu ,  Periannan Chidambaram ,  Srinivasan Chakravarthi

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/318 ,  H01L21/324 ,  H01L29/66

CPC分类号： H01L21/26513 ,  H01L21/3185 ,  H01L21/324 ,  H01L29/6656 ,  H01L29/6659

摘要： A low stress sacrificial cap layer 120 having a silicon oxide liner film 130, a low stress silicon film 140, and a silicon nitride film Alternatively, a low stress sacrificial cap layer 410 having a silicon oxide liner film 130 and a graded silicon nitride film 420. Also, methods 300, 500 for fabricating a transistor 20, 400 having a low stress sacrificial cap layer 120, 410.

摘要翻译： 具有氧化硅衬垫膜130，低应力硅膜140和氮化硅膜的低应力牺牲帽层120或者，具有氧化硅衬垫膜130和梯度氮化硅膜420的低应力牺牲帽层410 而且，用于制造具有低应力牺牲帽层120,410的晶体管20,400的方法300,500。

公开(公告)号：US08859383B2

公开(公告)日：2014-10-14

申请号：US13424825

申请日：2012-03-20

申请人： Youn-soo Kim ,  Jae-hyoung Choi ,  Kyu-ho Cho ,  Wan-don Kim ,  Jae-soon Lim ,  Sang-yeol Kang

发明人： Youn-soo Kim ,  Jae-hyoung Choi ,  Kyu-ho Cho ,  Wan-don Kim ,  Jae-soon Lim ,  Sang-yeol Kang

IPC分类号： H01L21/20 ,  H01L49/02 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318 ,  H01L27/108

CPC分类号： H01L28/56 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/31683 ,  H01L21/318 ,  H01L27/1085 ,  H01L28/40 ,  H01L28/75

摘要： A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.

摘要翻译： 一种半导体器件，具有具有改善的电特性和相关方法的电介质层，所述半导体器件包括顺序地设置在半导体衬底上的下金属层，电介质层和上金属层，以及设置在电介质层之间的插入层 下金属层和上金属层中的至少一个，其中电介质层包括金属氧化物膜，并且插入层包括金属材料膜。