公开(公告)号：US12094768B2

公开(公告)日：2024-09-17

申请号：US17370198

申请日：2021-07-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yu-Lien Huang ,  Ching-Feng Fu ,  Huan-Just Lin ,  Che-Ming Hsu

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/532 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/76837 ,  H01L21/76897 ,  H01L23/5226 ,  H01L21/02112 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/02274 ,  H01L23/5329 ,  H01L29/66795 ,  H01L29/785

摘要： A method is provided for sealing a seam in a self-aligned contact (SAC) layer that is disposed on a gate of a semiconductor structure. The method includes depositing a filler in the seam to seal the seam.

公开(公告)号：US20240079244A1

公开(公告)日：2024-03-07

申请号：US18307798

申请日：2023-04-27

申请人： FILNEX INC.

发明人： Mitsuhiko OGIHARA

IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/20

CPC分类号： H01L21/306 ,  H01L21/02112 ,  H01L21/02667 ,  H01L21/20

摘要： A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such that a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.

公开(公告)号：US11670514B2

公开(公告)日：2023-06-06

申请号：US17477538

申请日：2021-09-17

申请人： FILNEX INC.

发明人： Mitsuhiko Ogihara

IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/20

CPC分类号： H01L21/306 ,  H01L21/02112 ,  H01L21/02667 ,  H01L21/20

摘要： A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such lhat a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.

公开(公告)号：US20190237326A1

公开(公告)日：2019-08-01

申请号：US16257790

申请日：2019-01-25

申请人： TOKYO ELECTRON LIMITED

发明人： Takayuki KOMIYA ,  Hirokazu UEDA ,  Atsushi ENDO

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC分类号： H01L21/02274 ,  H01J37/32201 ,  H01L21/02112 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/68714

摘要： There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.

公开(公告)号：US20190035881A1

公开(公告)日：2019-01-31

申请号：US16072203

申请日：2017-03-03

申请人： GlobalWafers Co., Ltd.

发明人： Sasha Joseph Kweskin

IPC分类号： H01L29/04 ,  H01L21/20 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L21/324

CPC分类号： H01L29/04 ,  H01L21/02112 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/76254 ,  H01L29/0649

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.

公开(公告)号：US10062562B2

公开(公告)日：2018-08-28

申请号：US15010333

申请日：2016-01-29

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takaaki Noda ,  Kotaro Konno

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/46 ,  C23C16/52 ,  H01L21/67 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/02271 ,  C23C16/30 ,  C23C16/4408 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/67109 ,  H01L21/67248

摘要： According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.

公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

申请人： TOKYO ELECTRON LIMITED

发明人： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC分类号： H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

摘要： There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US20180166289A1

公开(公告)日：2018-06-14

申请号：US15580370

申请日：2016-06-07

申请人： AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

发明人： Chang-Koo KIM ,  Sung-Woon CHO ,  Jun-Hyun KIM ,  Jeong-Geun BAK

IPC分类号： H01L21/3065 ,  H01L21/033 ,  H01L21/02 ,  B32B33/00

CPC分类号： H01L21/3065 ,  B32B33/00 ,  B32B2307/73 ,  B32B2307/732 ,  B32B2457/14 ,  B81B1/008 ,  B81B2201/055 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C1/00031 ,  B81C1/00111 ,  B81C1/00206 ,  B81C1/00214 ,  B81C1/00531 ,  B81C1/00539 ,  B82Y40/00 ,  C09D5/00 ,  C09K13/00 ,  H01L21/02112 ,  H01L21/0334

摘要： The present invention relates to a method for producing a super-hydrophobic surface, and to a stack having a super-hydrophobic surface prepared by the above method. The super-hydrophobic surface may be realized only by plasma etching and deposition. The super-hydrophobic surface according to the present invention has a very low work of adhesion less than or equal to 3 mJ/m2. This super-hydrophobic surface may be applied to various fields including self-cleaning surface, anti-fogging surface, automobile glass surface, and drug delivery device surface.

公开(公告)号：US20180148588A1

公开(公告)日：2018-05-31

申请号：US15364172

申请日：2016-11-29

申请人： United Technologies Corporation

发明人： Wayde R. Schmidt ,  Paul Sheedy

IPC分类号： C09D11/102 ,  C09D11/03 ,  C04B35/571 ,  B41J2/01 ,  C23C4/134 ,  C23C4/131 ,  H01L21/02

CPC分类号： C09D11/102 ,  B41J2/01 ,  C04B35/5603 ,  C04B35/571 ,  C04B35/58 ,  C04B35/584 ,  C04B2235/36 ,  C04B2235/3817 ,  C04B2235/3852 ,  C04B2235/402 ,  C04B2235/404 ,  C04B2235/421 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/428 ,  C04B2235/447 ,  C04B2235/483 ,  C04B2235/5288 ,  C09D11/03 ,  C09D11/101 ,  C09D183/14 ,  C09D183/16 ,  C23C4/131 ,  C23C4/134 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02628 ,  H01L21/02667

摘要： A printable material in ink form for forming electronic and structural components capable of high temperature performance may include a polymeric or oligomeric ceramic precursor. The material may also include a filler material and an optional liquid carrier. The ceramic precursor materials may be silicon carbide, silicon oxycarbide, silicon nitride, silicon carbonitride, silicon oxycarbonitride, gallium containing group 13 oligomeric compounds and mixtures thereof. The ceramic precursor may be deposited by a direct ink writing (DIW) process.

公开(公告)号：US20180122701A1

公开(公告)日：2018-05-03

申请号：US15799706

申请日：2017-10-31

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Yong LI

IPC分类号： H01L21/8258 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L27/092 ,  H01L29/20 ,  H01L29/16

CPC分类号： H01L21/8258 ,  H01L21/02112 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823857 ,  H01L27/0924 ,  H01L29/16 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor structure and a fabrication method are provided. A fabrication method includes providing a substrate including an NMOS region and a PMOS region; forming a first high-K gate dielectric layer on the NMOS region of the substrate; forming an interfacial layer on the PMOS region of the substrate; forming a second high-K gate dielectric layer on the interfacial layer and the first high-K gate dielectric layer; forming a metal layer on the second high-K gate dielectric layer.