公开(公告)号：US12116666B2

公开(公告)日：2024-10-15

申请号：US15880245

申请日：2018-01-25

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Daigi Kamimura ,  Takeshi Ito ,  Tomoshi Taniyama

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  H01L21/02

CPC classification number: C23C16/4408 ,  C23C16/345 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67196 ,  H01L21/67313 ,  H01L21/67766 ,  H01L21/67775 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/67772

Abstract: Described herein is a technique capable of shortening the time required to reduce the oxygen concentration in a transfer chamber. According to the technique described herein, there is provided a substrate processing apparatus including: a transfer chamber wherein a substrate from a container is transported; a transfer robot configured to transfer the substrate through the transfer chamber; a purge gas supply mechanism configured to supply a purge gas into the transfer chamber; and a pressure control mechanism configured to control an inner pressure of the transfer chamber wherein the pressure control mechanism is provided at an exhaust channel wherethrough an inner atmosphere of the transfer chamber is exhausted, the pressure control mechanism including: an exhaust damper configured to fully open or fully close the exhaust channel; and an adjusting damper provided in the exhaust damper and configured to maintain the inner pressure of the transfer chamber at predetermined pressure.

公开(公告)号：US20240295024A1

公开(公告)日：2024-09-05

申请号：US18588315

申请日：2024-02-27

Applicant: Tokyo Electron Limited

Inventor： Makoto TAKAHASHI ,  Masato KADOBE ,  Tatsuya YAMAGUCHI

IPC: C23C16/455 ,  C23C16/48

CPC classification number: C23C16/45548 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/481

Abstract: A substrate processing apparatus includes: a processing container capable of accommodating a substrate holder that holds substrates; a gas supply chamber provided in a side wall of the processing container, a supply-side pipe extending horizontally from the gas supply chamber, and an injector detachably disposed spanning through the gas supply chamber and the supply-side pipe.

公开(公告)号：US12062546B2

公开(公告)日：2024-08-13

申请号：US17166256

申请日：2021-02-03

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Hidenari Yoshida ,  Shigeru Odake ,  Tomoshi Taniyama ,  Takayuki Nakada

IPC: H01L21/31 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/31 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45546 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/67109 ,  H01L21/67248

Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

公开(公告)号：US12018366B2

公开(公告)日：2024-06-25

申请号：US17186149

申请日：2021-02-26

Applicant: Tokyo Electron Limited

Inventor： Shingo Hishiya ,  Sung Duk Son

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/45578 ,  C23C16/4583

Abstract: A substrate processing apparatus includes a processing chamber configured to accommodate a substrate, an injector, including a first connection port and a second connection port, wherein an inside of the injector communicates with an inside of the processing chamber, an exhaust pipe configured to exhaust the inside of the processing chamber, a source gas introducing pipe, connected to the first connection port, and configured to introduce a source gas into the injector, a cleaning gas introducing pipe configured to introduce a cleaning gas into the injector through one of the first connection port and the second connection port, and a vent pipe, connecting the exhaust pipe and the other of the first connection port and the second connection port, and configured to exhaust the inside of the injector.

公开(公告)号：US11976362B2

公开(公告)日：2024-05-07

申请号：US17462673

申请日：2021-08-31

Applicant: Kioxia Corporation

Inventor： Takashi Asano

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/458 ,  H01L21/02

CPC classification number: C23C16/45578 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45546 ,  C23C16/4584 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/0228

Abstract: According to one embodiment, a substrate processing apparatus includes: an inner tube extending in a first direction and configured to accommodate a plurality of substrates; an outer tube configured to surround the inner tube and provide an airtight sealed space; a nozzle disposed in the inner tube; a gas supply configured to supply a processing gas to the inner tube via the nozzle; at least one slit provided on a side surface of the inner tube facing the nozzle; and an exhaust port coupled to the outer tube. Along the first direction, an opening area of a central portion of the slit is larger than an opening area of end portions of the slit.

公开(公告)号：US20240141489A1

公开(公告)日：2024-05-02

申请号：US18366820

申请日：2023-08-08

Applicant: Samsung Display Co., LTD.

Inventor： JAEWAN SEOL ,  INTAEK YOON ,  JONGHYUN CHOI

IPC: C23C16/455 ,  C23C14/24

CPC classification number: C23C16/45578 ,  C23C14/243 ,  C23C16/4557

Abstract: A deposition source includes a nozzle member, a vaporizing member, and a connecting member. The nozzle member includes a body portion including at least one first hole formed in a slot hole, a plurality of nozzles coupled to a first surface of the body portion and that eject a deposition material to an outside, and a crucible including at least one second hole overlapping the first hole and coupled to a second surface of the body portion by a fastening member inserted into the first hole and the second hole. The fastening member includes a bolt, a nut, and a washer. The vaporizing member is spaced apart from the nozzle member and stores the deposition material; and the connecting member connects the nozzle member and the vaporizing member. The deposition material moves through the connecting member.

公开(公告)号：US11967501B2

公开(公告)日：2024-04-23

申请号：US17582844

申请日：2022-01-24

Applicant: Kokusai Electric Corporation

Inventor： Hiroaki Hiramatsu ,  Shuhei Saido ,  Takuro Ushida

IPC: C23C16/40 ,  B25B11/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01L21/0217 ,  B25B11/005 ,  C23C16/4412 ,  C23C16/45578 ,  C23C16/481 ,  C23C16/52

Abstract: Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

公开(公告)号：US11913115B2

公开(公告)日：2024-02-27

申请号：US16928740

申请日：2020-07-14

Applicant: Tokyo Electron Limited

Inventor： Yoshitaka Miura

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

CPC classification number: C23C16/4588 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45578 ,  C23C16/52 ,  C23C16/4401 ,  C23C16/45589

Abstract: A substrate processing apparatus including: a processing container; an injector provided inside the processing container to have a shape extending in a longitudinal direction and configured to supply a processing gas; a holder fixed to the injector; a windmill fixed to the holder; a first driving-gas supply part configured to supply a driving-gas that rotates the windmill in a first direction; a second driving-gas supply part configured to supply the driving-gas that rotates the windmill in a second direction opposite the first direction; and a driving-gas controller configured to control the supply of the driving-gas from the first driving-gas supply part and the second driving-gas supply part. The injector is rotated about the longitudinal direction corresponding to a rotational axis by rotating the windmill through the supply of the driving-gas from at least one of the first and second driving-gas supply parts under the control of the driving-gas controller.

公开(公告)号：US20240018657A1

公开(公告)日：2024-01-18

申请号：US18373364

申请日：2023-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hyun YANG ,  Sang Yub IE ,  Tae Yong KIM ,  Phil Ouk NAM

IPC: C23C16/455 ,  H01L21/67 ,  H01L21/673

CPC classification number: C23C16/45578 ,  C23C16/45595 ,  C23C16/45546 ,  H01L21/67 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

公开(公告)号：US20230175126A1

公开(公告)日：2023-06-08

申请号：US18072773

申请日：2022-12-01

Applicant: ASM IP Holding B.V.

Inventor： Jianqiu Huang ,  Gnyanesh Trivedi ,  Thomas Fitzgerald ,  Akshay Phadnis ,  Yingzong Bu ,  Paul Ma ,  Shubham Garg

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/4583 ,  C23C16/45565 ,  C23C16/45578 ,  H01L21/68757

Abstract: A reactor can include a reaction chamber, a substrate support configured to support a substrate on a top side of the substrate support, and an elongate delivery apparatus disposed within the reaction chamber. The substrate support may be actuated to an upper position and to a lower position along a vertical axis within the reaction chamber. The substrate support may have a maximum horizontal dimension from the vertical axis along a horizontal axis substantially orthogonal to the vertical axis. The elongate delivery apparatus may have an inner horizontal dimension greater than the maximum horizontal dimension of the substrate support. The delivery apparatus can allow gas to pass through an interior of the delivery apparatus. The delivery apparatus can include a plurality of apertures. Each of the plurality of apertures can allow passage of the gas from the interior of the delivery apparatus into the reaction chamber.