公开(公告)号：US20240337015A1

公开(公告)日：2024-10-10

申请号：US18226269

申请日：2023-07-26

申请人： HIGHLIGHT TECH CORP.

发明人： CHIEN-HSUN CHEN ,  SHIH-YUAN SUN ,  MIN-JUI WU ,  CHIH-CHIANG FANG

IPC分类号： C23C16/44 ,  C23C16/455

CPC分类号： C23C16/4404 ,  C23C16/4412 ,  C23C16/45534 ,  C23C16/45553

摘要： Disclosed is an anti-deposition object for use in a vacuum environment with a main structure and a fluorine coating layer, the fluorine coating layer covers at least one surface of the main structure, the anti-deposition object contacts with a manufacturing process substance used or discharged during a manufacturing process performed by a manufacturing process equipment in the vacuum environment, the fluorine coating layer has a water droplet contact angle with the manufacturing process substance higher than that of the surface of the main structure, the fluorine coating layer has a hardness similar to or higher than that of the surface of the main structure, and the fluorine coating layer has a roughness lower than that of the surface of the main structure.

公开(公告)号：US12100576B2

公开(公告)日：2024-09-24

申请号：US16863541

申请日：2020-04-30

申请人： APPLIED MATERIALS, INC.

发明人： Andrew Nguyen ,  Xue Yang Chang ,  Yu Lei ,  Xianmin Tang ,  John C. Forster ,  Yogananda Sarode Vishwanath ,  Abilash Sainath ,  Tza-Jing Gung

IPC分类号： H01J37/32 ,  C23C16/44

CPC分类号： H01J37/32477 ,  C23C16/4412 ,  H01J37/3244 ,  H01J37/32495 ,  H01J37/32633 ,  H01J37/32651

摘要： Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a chamber liner having a tubular body with an upper portion and a lower portion; a confinement plate coupled to the lower portion of the chamber liner and extending radially inward from the chamber liner, wherein the confinement plate includes a plurality of slots; a shield ring disposed within the chamber liner and movable between the upper portion of the chamber liner and the lower portion of the chamber liner; and a plurality of ground straps coupled to the shield ring at a first end of each ground strap of the plurality of ground straps and to the confinement plate at a second end of each ground strap to maintain electrical connection between the shield ring and the chamber liner when the shield ring moves.

公开(公告)号：US12077857B2

公开(公告)日：2024-09-03

申请号：US18222024

申请日：2023-07-14

申请人： ASM IP Holding B.V.

发明人： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/455 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52

摘要： Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20240279812A1

公开(公告)日：2024-08-22

申请号：US18559997

申请日：2022-05-06

申请人： VAT HOLDING AG

发明人： Frantisek BALON ,  Kerim YUNT ,  Dominic MAYRHOFER

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/45561

摘要： Disclosed is a vacuum processing system including a vacuum chamber, a controllable fluid application arrangement connected to the vacuum chamber and configured to provide inflow of fluid into the vacuum chamber in controlled manner and a controlling and/or regulating unit for controlling at least the controllable fluid application arrangement. The vacuum processing system comprises an atmospheric analyzer, the atmospheric analyzer is arranged and configured to determine atmospheric information of inside of the vacuum chamber and to provide the atmospheric information as a respective atmospheric signal and the controlling and/or regulating unit is configured to control the controllable fluid application arrangement as a function of the atmospheric signal.

公开(公告)号：US12068144B2

公开(公告)日：2024-08-20

申请号：US16932799

申请日：2020-07-19

申请人： Applied Materials, Inc.

发明人： Mingle Tong

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/32871 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32458 ,  H01L21/67167

摘要： Exemplary semiconductor processing systems may include a pumping system, a chamber body that defines a processing region, and a pumping liner disposed within the processing region. The pumping liner may define an annular member characterized by a wall that defines an exhaust aperture coupled to the pumping system. The annular member may be characterized by an inner wall that defines a plurality of apertures distributed circumferentially along the inner wall. A plenum may be defined in the annular member between interior surfaces of the walls. A divider may be disposed within the plenum, where the divider separates the plenum into a first plenum chamber and a second plenum chamber, wherein the first plenum chamber is fluidly accessible from the apertures defined through the inner wall, and wherein the divider defines at least one aperture providing fluid access between the first plenum chamber and the second plenum chamber.

公开(公告)号：US20240271273A1

公开(公告)日：2024-08-15

申请号：US18636677

申请日：2024-04-16

申请人： NuFlare Technology, Inc.

发明人： Ichiro MIZUSHIMA ,  Shigeaki ISHII

IPC分类号： C23C16/02 ,  C23C16/32 ,  C23C16/44 ,  C23C16/46 ,  H01L21/02

CPC分类号： C23C16/0227 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/02041

摘要： A vapor phase growth method of an embodiment is a vapor phase growth method using a vapor phase growth apparatus including a reactor, an exhaust pump, a pressure control valve, and an exhaust pipe. The vapor phase growth method includes: loading a first substrate into the reactor, heating the first substrate, supplying a process gas, and forming a silicon carbide film on a surface of the first substrate and depositing a by-product containing carbon in the first portion or the second portion by adjusting a pressure in the reactor by controlling the pressure control valve; unloading the first substrate from the reactor; removing the by-product by supplying a gas including a gas containing fluorine to the exhaust pipe by controlling a pressure in the exhaust pipe; and then loading a second substrate into the reactor to form a silicon carbide film on a surface of the second substrate.

公开(公告)号：US20240258085A1

公开(公告)日：2024-08-01

申请号：US18420983

申请日：2024-01-24

申请人： ASM IP Holding B.V.

发明人： Koei Aida

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/332

摘要： A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a gas supply unit configured to provide the reaction chamber with a main gas; a shared exhaust unit configured to exhaust the main gas from the plurality of reaction chambers; a plurality of exhaust gas lines configured to fluidly couple the shared exhaust unit to the plurality of reaction chambers; and a plurality of dilution gas lines configured to provide a dilution gas into the plurality of exhaust gas lines.

公开(公告)号：US20240247371A1

公开(公告)日：2024-07-25

申请号：US18626047

申请日：2024-04-03

申请人： Applied Materials, Inc.

发明人： Nitin Pathak ,  Yuxing Zhang ,  Tuan A. Nguyen ,  Kalyanjit Ghosh ,  Amit Bansal ,  Juan Carlos Rocha-Alvarez

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

CPC分类号： C23C16/4405 ,  C23C16/4412 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32862 ,  C23C16/4585

摘要： A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least in part define a processing volume. The pumping liner may define an internal volume in fluid communication with the processing volume via a plurality of apertures of the pumping liner circumferentially disposed about the processing volume. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the internal volume of the pumping liner into the processing volume via a subset of the plurality of apertures of the pumping liner during fluid distribution into the processing volume from the gas distribution member.

公开(公告)号：US12037701B2

公开(公告)日：2024-07-16

申请号：US17218892

申请日：2021-03-31

申请人： Applied Materials, Inc.

发明人： Zhiyuan Ye ,  Shu-Kwan Danny Lau ,  Brian H. Burrows ,  Lori Washington ,  Herman Diniz ,  Martin A. Hilkene ,  Richard O. Collins ,  Nyi O. Myo ,  Manish Hemkar ,  Schubert S. Chu

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC分类号： C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

摘要： A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US20240234177A1

公开(公告)日：2024-07-11

申请号：US18495224

申请日：2023-10-26

申请人： Samsung Electronics Co., Ltd.

发明人： Hun Yong PARK ,  Yeon Tae KIM ,  Jang Hwi LEE ,  Sang Woo BAE ,  Kyung Su KIM ,  Tae Soon PARK ,  Jung Chul LEE ,  Sung Ho JANG ,  Won Don JOO

IPC分类号： H01L21/67 ,  C23C16/44 ,  C23C16/452 ,  H01L21/02

CPC分类号： H01L21/67115 ,  C23C16/4412 ,  C23C16/452 ,  H01L21/0228

摘要： A wafer processing apparatus may include a chamber providing an internal space; and a first rib on an outer side of a first sidewall of the chamber. An outer side of the first rib may include a first portion and a second portion. A light transmittance of the first portion may be different from a light transmittance of the second portion.