公开(公告)号：US20240145230A1

公开(公告)日：2024-05-02

申请号：US17976573

申请日：2022-10-28

申请人： Applied Materials, Inc.

发明人： Abhishek Mandal ,  Nitin Deepak ,  Geetika Bajaj ,  Ankur Kadam ,  Gopi Chandran Ramachandran ,  Suraj Rengarajan ,  Farhad K. Moghadam ,  Deenesh Padhi ,  Srinivas M. Satya ,  Manish Hemkar ,  Vijay Tripathi ,  Darshan Thakare

IPC分类号： H01L21/02

CPC分类号： H01L21/0206 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/0226

摘要： Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.

公开(公告)号：US20240290644A1

公开(公告)日：2024-08-29

申请号：US18175344

申请日：2023-02-27

申请人： Applied Materials, Inc.

发明人： Dmitry Lubomirsky ,  Kaushik Alayavalli ,  Manish Hemkar ,  Jeffrey C. Hudgens ,  Maureen Breiling

IPC分类号： H01L21/677 ,  H01L21/67

CPC分类号： H01L21/67742 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

摘要： Exemplary semiconductor processing systems may include a first processing chamber and a second processing chamber. Each processing chamber may define a processing region and a transfer region having a slit valve. Each processing chamber may include a substrate support that is vertically translatable between the processing region and the transfer region. Each processing chamber may include a gas delivery assembly disposed above and in alignment with the substrate support. The first processing chamber and the second processing chamber may be at least substantially aligned along a first vertical axis. The systems may include a first transfer chamber coupled with the first processing chamber via the slit valve. The systems may include a second transfer chamber coupled with the second processing chamber via the slit valve. A transfer robot may be disposed within each transfer chamber. The transfer chambers may be at least substantially aligned along a second vertical axis.

公开(公告)号：US12037701B2

公开(公告)日：2024-07-16

申请号：US17218892

申请日：2021-03-31

申请人： Applied Materials, Inc.

发明人： Zhiyuan Ye ,  Shu-Kwan Danny Lau ,  Brian H. Burrows ,  Lori Washington ,  Herman Diniz ,  Martin A. Hilkene ,  Richard O. Collins ,  Nyi O. Myo ,  Manish Hemkar ,  Schubert S. Chu

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC分类号： C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

摘要： A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US10269614B2

公开(公告)日：2019-04-23

申请号：US14885016

申请日：2015-10-16

申请人： Applied Materials, Inc.

发明人： Schubert S. Chu ,  Kartik Shah ,  Anhthu Ngo ,  Karthik Ramanathan ,  Nitin Pathak ,  Nyi O. Myo ,  Paul Brillhart ,  Richard O. Collins ,  Kevin Joseph Bautista ,  Edric Tong ,  Zhepeng Cong ,  Anzhong Chang ,  Kin Pong Lo ,  Manish Hemkar

IPC分类号： H01L21/687 ,  H01L21/67 ,  C23C16/458

摘要： Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.