公开(公告)号：US12068155B2

公开(公告)日：2024-08-20

申请号：US17396371

申请日：2021-08-06

Applicant: Applied Materials, Inc.

Inventor： Chen-Ying Wu ,  Zhiyuan Ye ,  Xuebin Li ,  Sathya Chary ,  Yi-Chiau Huang ,  Saurabh Chopra

IPC: H01L21/02 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L21/02211 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/04

Abstract: Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly surfaces with reduced or negligible growth on surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

公开(公告)号：US11848226B2

公开(公告)日：2023-12-19

申请号：US17183146

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673 ,  C23C16/458

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US11821088B2

公开(公告)日：2023-11-21

申请号：US17331401

申请日：2021-05-26

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Koji Nakanishi ,  Toshiyuki Nakagawa ,  Zuoming Zhu ,  Zhiyuan Ye ,  Joseph M. Ranish ,  Nyi O. Myo ,  Errol Antonio C. Sanchez ,  Schubert S. Chu

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52 ,  B23K26/352

CPC classification number: C23C16/46 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0604 ,  B23K26/08 ,  B23K26/123 ,  B23K26/126 ,  B23K26/127 ,  B23K26/128 ,  B23K26/352 ,  C23C16/52 ,  H01L21/6719 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68757

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US20230017206A1

公开(公告)日：2023-01-19

申请号：US17935810

申请日：2022-09-27

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

Abstract: A master controller determines a first flow setpoint for a process flow gas and/or a carrier gas flow through a first mass flow controller. The master controller obtains a back pressure setpoint of a distribution manifold and determines a second flow setpoint for the process gas flow and/or the carrier gas flow through a second mass flow controller or a back pressure controller based on the determined first flow setpoint and the obtained back pressure setpoint. The master controller controls the process gas flow and/or the carrier gas flow through the first mass flow controller to the first flow setpoint and the second mass flow controller and/or the back pressure controller to the second flow setpoint. The master controller controls the back pressure of the distribution manifold to the back pressure set point in view of a back pressure reading from a back pressure sensor of the distribution manifold.

公开(公告)号：US10731272B2

公开(公告)日：2020-08-04

申请号：US16282576

申请日：2019-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Nyi O. Myo ,  Kevin Bautista ,  Zhiyuan Ye ,  Schubert S. Chu ,  Yihwan Kim

IPC: C30B25/10 ,  C30B25/12 ,  C23C16/458 ,  H01L21/687

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

公开(公告)号：US10727093B2

公开(公告)日：2020-07-28

申请号：US14645883

申请日：2015-03-12

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Joseph M. Ranish ,  Aaron Muir Hunter ,  Edric Tong ,  James Francis Mack ,  Kin Pong Lo ,  Errol Antonio C. Sanchez ,  Zhiyuan Ye ,  Anzhong Chang

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/687 ,  G02B6/08 ,  H05B3/00

Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

公开(公告)号：US20190206707A1

公开(公告)日：2019-07-04

申请号：US16293341

申请日：2019-03-05

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

CPC classification number: H01L21/67253 ,  G05D11/132 ,  H01L21/67017

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

公开(公告)号：US10256322B2

公开(公告)日：2019-04-09

申请号：US15926921

申请日：2018-03-20

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Zhiyuan Ye ,  Hua Chung

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/78 ,  H01L29/167 ,  H01L29/08 ,  H01L29/06

Abstract: A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.

公开(公告)号：US10043870B2

公开(公告)日：2018-08-07

申请号：US14918604

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Keun-Yong Ban

IPC: H01L29/205 ,  H01L27/146 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a phosphorous containing layer deposited over a silicon substrate, a GaAs containing layer deposited on the phosphorous containing layer, and an aluminum containing layer deposited on the GaAs containing layer. The GaAs containing layer between the phosphorous containing layer and the aluminum containing layer improves the surface smoothness of the aluminum containing layer.

公开(公告)号：US20250069923A1

公开(公告)日：2025-02-27

申请号：US18942200

申请日：2024-11-08

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

Abstract: A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines an amount of gas loss within the system due to the abatement sub-system. The master controller determines a flow setpoint for the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers based on the identified flow ratio setpoint and the determined amount of gas loss. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers