公开(公告)号：US20240145230A1

公开(公告)日：2024-05-02

申请号：US17976573

申请日：2022-10-28

Applicant: Applied Materials, Inc.

Inventor： Abhishek Mandal ,  Nitin Deepak ,  Geetika Bajaj ,  Ankur Kadam ,  Gopi Chandran Ramachandran ,  Suraj Rengarajan ,  Farhad K. Moghadam ,  Deenesh Padhi ,  Srinivas M. Satya ,  Manish Hemkar ,  Vijay Tripathi ,  Darshan Thakare

IPC: H01L21/02

CPC classification number: H01L21/0206 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/0226

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.