公开(公告)号：US20220056577A1

公开(公告)日：2022-02-24

申请号：US17517293

申请日：2021-11-02

申请人： NuFlare Technology, Inc.

发明人： Ichiro MIZUSHIMA ,  Shigeaki ISHII

IPC分类号： C23C16/02 ,  C23C16/46 ,  C23C16/44 ,  C23C16/32 ,  H01L21/02

摘要： A vapor phase growth method of an embodiment is a vapor phase growth method using a vapor phase growth apparatus including a reactor, an exhaust pump, a pressure control valve, and an exhaust pipe. The vapor phase growth method includes: loading a first substrate into the reactor, heating the first substrate, supplying a process gas, and forming a silicon carbide film on a surface of the first substrate and depositing a by-product containing carbon in the first portion or the second portion by adjusting a pressure in the reactor by controlling the pressure control valve; unloading the first substrate from the reactor; removing the by-product by supplying a gas including a gas containing fluorine to the exhaust pipe by controlling a pressure in the exhaust pipe; and then loading a second substrate into the reactor to form a silicon carbide film on a surface of the second substrate.

公开(公告)号：US20220005696A1

公开(公告)日：2022-01-06

申请号：US17477055

申请日：2021-09-16

申请人： NuFlare Technology, Inc.

发明人： Ichiro MIZUSHIMA ,  Yoshiaki DAIGO ,  Yoshikazu MORIYAMA

IPC分类号： H01L21/205 ,  C30B25/14 ,  H01L21/02

摘要： A SiC epitaxial growth apparatus according to an embodiment includes: a chamber into which a process gas at least containing silicon and carbon is introduced and housing a substrate to undergo epitaxial growth with the process gas; piping that discharges a gas containing a byproduct generated through epitaxial growth from the chamber; and a valve for pressure control in a middle of the piping. The valve has a flow inlet into which the gas flows from an upstream portion of the piping that causes the chamber and the valve to connect, and a flow outlet that allows the gas to flow out to a downstream portion of the piping that connects with the upstream portion via the valve. a part of the downstream portion is at a position lower than the flow outlet. The apparatus comprises a trap part being capable of collecting the byproduct at the downstream portion.

公开(公告)号：US20240271273A1

公开(公告)日：2024-08-15

申请号：US18636677

申请日：2024-04-16

申请人： NuFlare Technology, Inc.

发明人： Ichiro MIZUSHIMA ,  Shigeaki ISHII

IPC分类号： C23C16/02 ,  C23C16/32 ,  C23C16/44 ,  C23C16/46 ,  H01L21/02

CPC分类号： C23C16/0227 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/02041

摘要： A vapor phase growth method of an embodiment is a vapor phase growth method using a vapor phase growth apparatus including a reactor, an exhaust pump, a pressure control valve, and an exhaust pipe. The vapor phase growth method includes: loading a first substrate into the reactor, heating the first substrate, supplying a process gas, and forming a silicon carbide film on a surface of the first substrate and depositing a by-product containing carbon in the first portion or the second portion by adjusting a pressure in the reactor by controlling the pressure control valve; unloading the first substrate from the reactor; removing the by-product by supplying a gas including a gas containing fluorine to the exhaust pipe by controlling a pressure in the exhaust pipe; and then loading a second substrate into the reactor to form a silicon carbide film on a surface of the second substrate.