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    Process kit for a high throughput processing chamber
    2.
    发明授权
    Process kit for a high throughput processing chamber 有权

    公开(公告)号：US11512391B2

    公开(公告)日：2022-11-29

    申请号：US16912417

    申请日：2020-06-25

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

    IPC: C23C16/44 ,  H01J37/32

    Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

    SEMICONDUCTOR PROCESSING CHAMBERS AND METHODS FOR CLEANING THE SAME
    3.
    发明申请
    SEMICONDUCTOR PROCESSING CHAMBERS AND METHODS FOR CLEANING THE SAME 有权

    公开(公告)号：US20210032747A1

    公开(公告)日：2021-02-04

    申请号：US16936110

    申请日：2020-07-22

    Applicant: Applied Materials, Inc.

    Inventor： Nitin Pathak ,  Yuxing Zhang ,  Tuan A. Nguyen ,  Kalyanjit Ghosh ,  Amit Bansal ,  Juan C. Rocha

    IPC: C23C16/44 ,  H01J37/32 ,  C23C16/52

    Abstract: A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least in part define a processing volume. The pumping liner may define an internal volume in fluid communication with the processing volume via a plurality of apertures of the pumping liner circumferentially disposed about the processing volume. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the internal volume of the pumping liner into the processing volume via a subset of the plurality of apertures of the pumping liner during fluid distribution into the processing volume from the gas distribution member.

    Faceplate with embedded heater
    4.
    发明授权
    Faceplate with embedded heater 有权

    公开(公告)号：US10889894B2

    公开(公告)日：2021-01-12

    申请号：US16510845

    申请日：2019-07-12

    Applicant: Applied Materials, Inc.

    Inventor： Daniel Hwung ,  Yuxing Zhang ,  Kalyanjit Ghosh ,  Kaushik Alayavalli ,  Amit Kumar Bansal

    IPC: C23C16/40 ,  C23C16/455 ,  H01L21/67

    Abstract: A faceplate for a processing chamber is disclosed. The faceplate has a body with a plurality of apertures formed therethrough. A flexure is formed in the body partially circumscribing the plurality of apertures. A cutout is formed through the body on a common radius with the flexure. One or more bores extend from a radially inner surface of the cutout to an outer surface of the body. A heater is disposed between flexure and the plurality of apertures. The flexure and the cutout are thermal chokes which limit heat transfer thereacross from the heater.

    Process kit for a high throughput processing chamber
    5.
    发明授权
    Process kit for a high throughput processing chamber 有权

    公开(公告)号：US10724138B2

    公开(公告)日：2020-07-28

    申请号：US15992330

    申请日：2018-05-30

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

    IPC: C23C16/44 ,  H01J37/32

    Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

    Chamber liner for high temperature processing
    7.
    发明授权
    Chamber liner for high temperature processing 有权

    公开(公告)号：US10480068B2

    公开(公告)日：2019-11-19

    申请号：US15434853

    申请日：2017-02-16

    Applicant: Applied Materials, Inc.

    Inventor： Sanjeev Baluja ,  Ren-Guan Duan ,  Kalyanjit Ghosh

    IPC: C23C16/00 ,  C23C16/44 ,  C23C16/455

    Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

    Methods and apparatus for substrate edge cleaning
    8.
    发明授权
    Methods and apparatus for substrate edge cleaning 有权
    用于衬底边缘清洁的方法和设备

    公开(公告)号：US09443714B2

    公开(公告)日：2016-09-13

    申请号：US13785903

    申请日：2013-03-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： James Matthew Holden ,  Song-Moon Suh ,  Todd Egan ,  Kalyanjit Ghosh ,  Leon Volfovski ,  Michael R. Rice ,  Richard Giljum

    IPC: H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/67028 ,  B01D39/12 ,  B08B5/00 ,  B08B7/00 ,  H01L21/02076 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67051

    Abstract: A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.

    Abstract translation: 基板清洁装置可以包括具有支撑表面以支撑要清洁的基板的基板支撑件，其中基板支撑件可绕垂直于支撑表面的中心轴线旋转; 第一喷嘴，用于当所述基板由所述基板支撑件的支撑表面支撑时，将第一清洁气体提供到所述内部体积的与所述基板的边缘的位置相对应的区域; 第一环形体，其通过间隙与衬底支撑件的支撑表面相对设置并间隔开，第一环形体具有由内壁限定的中心开口，内壁被成形为提供第一环形体和第二环形体之间的间隙的减小尺寸 支撑表面沿径向向外的方向; 以及第一气体入口，用于向第一环形体的中心开口提供第一气体。

    Gas injection apparatus and substrate process chamber incorporating same
    9.
    发明授权
    Gas injection apparatus and substrate process chamber incorporating same 有权
    气体注入装置和包含其的基板处理室

    公开(公告)号：US09123758B2

    公开(公告)日：2015-09-01

    申请号：US14154346

    申请日：2014-01-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Agus Sofian Tjandra ,  Kalyanjit Ghosh ,  Christopher S. Olsen ,  Umesh M. Kelkar

    IPC: F15C1/16 ,  H01L21/67

    CPC classification number: H01L21/67115 ,  H01L21/67017 ,  H01L21/6719 ,  Y10T137/87652

    Abstract: Methods and apparatus for mixing and delivery of process gases are provided herein. In some embodiments, a gas injection apparatus includes an elongate top plenum comprising a first gas inlet; an elongate bottom plenum disposed beneath and supporting the top plenum, the bottom plenum comprising a second gas inlet; a plurality of first conduits disposed through the bottom plenum and having first ends fluidly coupled to the top plenum and second ends disposed beneath the bottom plenum; and a plurality of second conduits having first ends fluidly coupled to the bottom plenum and second ends disposed beneath the bottom plenum; wherein a lower end of the bottom plenum is adapted to fluidly couple the gas injection apparatus to a mixing chamber such that the second ends of the plurality of first conduits and the second ends of the plurality of second conduits are in fluid communication with the mixing chamber.

    Abstract translation: 本文提供了用于混合和输送工艺气体的方法和装置。 在一些实施例中，气体注入装置包括细长顶部增压室，其包括第一气体入口; 设置在所述顶部增压室下方并支撑所述顶部增压室的细长底部增压室，所述底部增压室包括第二气体入口; 多个第一导管，其设置穿过所述底部集气室，并且具有流体耦合到所述顶部增压室的第一端和设置在所述底部增压室下方的第二端; 以及多个第二导管，其具有流体地联接到所述底部增压室的第一端和设置在所述底部增压室下方的第二端; 其中所述底部增压室的下端适于将所述气体注入装置流体地耦合到混合室，使得所述多个第一导管的第二端和所述多个第二导管的所述第二端与所述混合室流体连通 。

    Pumping apparatus and method for substrate processing chambers
    10.
    发明授权
    Pumping apparatus and method for substrate processing chambers 有权

    公开(公告)号：US11078568B2

    公开(公告)日：2021-08-03

    申请号：US16685340

    申请日：2019-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit Ghosh ,  David Blahnik ,  Amit Kumar Bansal ,  Tuan Anh Nguyen

    IPC: C23C16/44

    Abstract: The present disclosure relates to pumping devices, components thereof, and methods associated therewith for substrate processing chambers. In one example, a pumping ring for substrate processing chambers includes a body. The body includes an upper wall, a lower wall, an inner radial wall, and an outer radial wall. The pumping ring also includes an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall. The pumping ring also includes a first exhaust port in the body that is fluidly coupled to the annulus, and a second exhaust port in the body that is fluidly coupled to the annulus. The pumping ring also includes a first baffle disposed in the annulus adjacent to the first exhaust port, and a second baffle disposed in the annulus adjacent to the second exhaust port.

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