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公开(公告)号：US20240347336A1
公开(公告)日：2024-10-17
申请号：US18135434
申请日：2023-04-17
Applicant: Applied Materials, Inc.
Inventor： Nitin Deepak , Ryan Sheil , Jennifer Y. Sun , Zhijun Jiang , Katherine Woo
CPC classification number: H01L21/02178 , C23C16/08 , H01J37/32091 , H01J37/321 , H01L21/0214 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01J2237/332
Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The one or more deposition precursors may include a metal-containing precursor and a fluorine-containing precursor. The methods may include depositing a layer of material on the component for semiconductor processing in the processing region. The layer of material comprises a metal-and-fluorine-containing material.
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公开(公告)号：US20240347327A1
公开(公告)日：2024-10-17
申请号：US18748650
申请日：2024-06-20
Inventor： Yen-Liang LIN , Yu-Kang HUANG , Yu-Chuan TAI
CPC classification number: H01J37/345 , C23C14/185 , C23C14/35 , C23C14/54 , H01J37/32449 , H01J37/3426 , H01J37/3464 , H01J37/3476 , H01J37/32082 , H01J2237/24564 , H01J2237/332
Abstract: Some implementations described herein provide a physical vapor deposition tool. The physical vapor deposition tool includes a magnet component, a single cathode, and a power circuit for biasing a pedestal that supports a semiconductor substrate. During a deposition operation that deposits an inert metal material, the physical vapor deposition tool may modulate an electromagnetic field emanating from the magnet component that includes spiral-shaped bands having different ranges of magnetic strength. The physical vapor deposition tool may have an increased throughput relative to a physical vapor deposition tool without the magnet component, the single cathode, and the power circuit. Additionally, or alternatively, the inert metal material may have a grain size that is greater relative to a grain size of an inert metal material deposited using the physical vapor deposition tool without the magnet component, the single cathode, and the power circuit.
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公开(公告)号：US20240331975A1
公开(公告)日：2024-10-03
申请号：US18129285
申请日：2023-03-31
Applicant: Applied Materials, Inc.
Inventor： Shuchi Sunil Ojha , Soham Asrani , Praket Prakash Jha , Bhargav S. Citla , Jingmei Liang
CPC classification number: H01J37/32146 , H01L21/02532 , H01L21/0262 , H01J37/32816 , H01J2237/182 , H01J2237/2001 , H01J2237/332 , H01J2237/3343 , H01J2237/336
Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include etching the silicon-containing material from a sidewall of the feature within the substrate with the plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining silicon-containing material within the feature defined within the substrate.
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公开(公告)号：US12106941B2
公开(公告)日：2024-10-01
申请号：US18493618
申请日：2023-10-24
Applicant: JUSUNG ENGINEERING CO., LTD.
Inventor： Chul-Joo Hwang
IPC: C23C16/40 , C23C16/455 , C23C16/52 , H01J37/32 , H01L21/02
CPC classification number: H01J37/32449 , C23C16/45536 , C23C16/45551 , C23C16/45574 , C23C16/52 , H01L21/02274 , H01L21/0228 , H01J2237/20214 , H01J2237/332 , H01J2237/3321
Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.
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公开(公告)号：US20240318311A1
公开(公告)日：2024-09-26
申请号：US18610654
申请日：2024-03-20
Applicant: ASM IP Holding B.V.
Inventor： Agung Setiadi , Hiroki Matsuda , Jun Kawahara
IPC: C23C16/455 , C23C16/34 , C23C16/515 , H01J37/32 , H01L21/02
CPC classification number: C23C16/45542 , C23C16/345 , C23C16/45534 , C23C16/515 , H01J37/32146 , H01J37/3244 , H01J37/32816 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02315 , H01J2237/332
Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen under conditions that reduce incubation time for depositing the silicon nitride.
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Patent Agency Ranking
公开(公告)号：US12094716B2
公开(公告)日：2024-09-17
申请号：US17473821
申请日：2021-09-13
Applicant: Applied Materials, Inc.
Inventor： Leonard M. Tedeschi , Kartik Ramaswamy , Benjamin C E Schwarz , Changgong Wang , Vahid Firouzdor , Sumanth Banda , Teng-Fang Kou
IPC: H01L21/02 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683
CPC classification number: H01L21/3065 , H01J37/32862 , H01L21/02274 , H01L21/31116 , H01L21/6833 , H01J2237/332 , H01J2237/334
Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.
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公开(公告)号：US20240304416A1
公开(公告)日：2024-09-12
申请号：US18668645
申请日：2024-05-20
Applicant: Tokyo Electron Limited
Inventor： Hitoshi KATO , Hiroyuki KIKUCHI
IPC: H01J37/32 , C23C16/40 , C23C16/505
CPC classification number: H01J37/3211 , C23C16/401 , C23C16/505 , H01J2237/332
Abstract: A method for adjusting the oxidation or nitriding amount in a substrate process within a process chamber is disclosed. It involves providing a process chamber with a housing, a susceptor for holding the substrate, and an antenna member extending radially from the susceptor's center towards its outer periphery. A process gas supply unit is placed between the housing's bottom exterior and the susceptor's upper surface. The antenna member's shape on the central axis and outer peripheral sides of the susceptor is determined based on the tendencies for the oxidizing amount to decrease and increase, respectively, with increasing distance from the housing's bottom inside. The antenna is deformed based on the determined shape to adjust the oxidation or nitriding amount of the substrate process.
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公开(公告)号：US12080526B2
公开(公告)日：2024-09-03
申请号：US17625730
申请日：2020-07-09
Applicant: JUSUNG ENGINEERING CO., LTD.
Inventor： Woong Kyo Oh , Young Woon Kim , Kwang Su Yoo , Do Hyung Kim , Yun Gyu Ha
IPC: H01J37/32
CPC classification number: H01J37/32559 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J2237/332
Abstract: The present disclosure relates to a substrate processing apparatus capable of improving efficiency in a substrate processing process by adjusting a flow rate and residence time of gas and a plasma density according to process conditions. The substrate processing apparatus according to the embodiment of the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the gas injection module including the first and second injection plates.
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公开(公告)号：US12080521B2
公开(公告)日：2024-09-03
申请号：US18220403
申请日：2023-07-11
Applicant: Tokyo Electron Limited
Inventor： Michiko Nakaya , Yuya Minoura , Taku Gohira
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J2237/332
Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.
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公开(公告)号：US12080516B2
公开(公告)日：2024-09-03
申请号：US17456236
申请日：2021-11-23
Applicant: Applied Materials, Inc.
Inventor： Zheng John Ye , Jianhua Zhou , Shouqian Shao , Suhail Anwar
IPC: C23C16/34 , C23C16/30 , C23C16/40 , C23C16/505 , H01J37/32
CPC classification number: H01J37/32119 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/505 , H01J37/32532 , H01J2237/332
Abstract: The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.
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