公开(公告)号：US12080526B2

公开(公告)日：2024-09-03

申请号：US17625730

申请日：2020-07-09

申请人： JUSUNG ENGINEERING CO., LTD.

发明人： Woong Kyo Oh ,  Young Woon Kim ,  Kwang Su Yoo ,  Do Hyung Kim ,  Yun Gyu Ha

IPC分类号： H01J37/32

CPC分类号： H01J37/32559 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J2237/332

摘要： The present disclosure relates to a substrate processing apparatus capable of improving efficiency in a substrate processing process by adjusting a flow rate and residence time of gas and a plasma density according to process conditions. The substrate processing apparatus according to the embodiment of the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the gas injection module including the first and second injection plates.