公开(公告)号：US20240360545A1

公开(公告)日：2024-10-31

申请号：US18769687

申请日：2024-07-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Lung Huo ,  Wei-Chen Liao ,  Ming-Hsien Lin

IPC分类号： C23C14/54 ,  C23C14/14 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/54 ,  C23C14/14 ,  C23C14/35 ,  H01J37/3476

摘要： A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

公开(公告)号：US12129541B2

公开(公告)日：2024-10-29

申请号：US18072483

申请日：2022-11-30

申请人： SKY TECH INC.

发明人： Jing-Cheng Lin

IPC分类号： C23C14/54 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/545 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/542 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3461 ,  H01J37/347 ,  H01J37/3476

摘要： The present disclosure provides a deposition equipment, which includes a reaction chamber, a carrier, a target material, a magnetic device are at least one shield unit. The carrier and the target material are disposed within the containing space, wherein the carrier is for carrying a substrate, also a surface of the target material faces the carrier and the substrate. The magnetic device is disposed on another surface of the target material, to generate a magnetic field within the containing space through the target material. The shield unit is made electrical conductor and is disposed between a portion of the magnetic device and a portion of the target material, wherein the shield unit is for partially blocking and micro-adjusting the magnetic field generated by the magnetic device within the containing space, such that to improve an evenness of thickness for a thin film formed on the substrate.

公开(公告)号：US12087563B2

公开(公告)日：2024-09-10

申请号：US18162274

申请日：2023-01-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Liang Lin ,  Yu-Kang Huang ,  Yu-Chuan Tai

IPC分类号： C23C14/34 ,  C23C14/18 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/345 ,  C23C14/185 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32449 ,  H01J37/3426 ,  H01J37/3464 ,  H01J37/3476 ,  H01J37/32082 ,  H01J2237/24564 ,  H01J2237/332

摘要： The physical vapor deposition tool includes a magnet component, a single cathode, and a power circuit for biasing a pedestal that supports a semiconductor substrate. During a deposition operation that deposits an inert metal material, the physical vapor deposition tool may modulate an electromagnetic field emanating from the magnet component that includes spiral-shaped bands having different ranges of magnetic strength. The physical vapor deposition tool may have an increased throughput relative to a physical vapor deposition tool without the magnet component, the single cathode, and the power circuit. Additionally, or alternatively, the inert metal material may have a grain size that is greater relative to a grain size of an inert metal material deposited using the physical vapor deposition tool without the magnet component, the single cathode, and the power circuit.

公开(公告)号：US12077880B2

公开(公告)日：2024-09-03

申请号：US17243158

申请日：2021-04-28

申请人： Applied Materials, Inc.

发明人： Zhepeng Cong ,  Nyi Oo Myo ,  Tao Sheng ,  Yong Zheng

IPC分类号： C30B25/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B41J2/16 ,  G01B11/06 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

CPC分类号： C30B25/16 ,  C23C14/50 ,  C23C14/541 ,  C23C14/547 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B23/002 ,  C30B23/063 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B01J2219/00443 ,  B41J2/1642 ,  G01B11/0625 ,  G01N2201/062 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

摘要： Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US12065725B2

公开(公告)日：2024-08-20

申请号：US17002822

申请日：2020-08-26

申请人： Kioxia Corporation

发明人： Yuta Konno ,  Toshihiko Nagase ,  Atsuko Sakata ,  Kohei Nagata ,  Ryohei Kitao ,  Akifumi Gawase ,  Takeshi Iwasaki

IPC分类号： C23C14/00 ,  B01D53/30 ,  C23C14/06 ,  C23C14/08 ,  C23C14/50 ,  C23C14/52 ,  C23C14/54 ,  C23C14/56

CPC分类号： C23C14/0036 ,  B01D53/30 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/50 ,  C23C14/52 ,  C23C14/54 ,  C23C14/566

摘要： A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

公开(公告)号：US20240263297A1

公开(公告)日：2024-08-08

申请号：US18436260

申请日：2024-02-08

申请人： Arizona Thin Film Research, LLC

发明人： Patrick Morse

IPC分类号： C23C14/34 ,  C23C14/54

CPC分类号： C23C14/3442 ,  C23C14/54

摘要： The present disclosure provides a sputtering process comprising the steps of ionizing a process gas with a laser to form an ionized process gas and accelerating the ionized process gas into a target material surface using an electric field generated by at least one electrode.

公开(公告)号：US12049691B2

公开(公告)日：2024-07-30

申请号：US17332822

申请日：2021-05-27

申请人： Applied Materials, Inc.

发明人： Andreas Lopp ,  Stefan Bangert

IPC分类号： C23C14/54 ,  C23C14/24 ,  H01J37/32

CPC分类号： C23C14/542 ,  C23C14/24 ,  H01J37/32651

摘要： A temperature-controlled shield for an evaporation source is described. The temperature-controlled shield is configured to provide a pre-heating zone or a post-cooling zone.

公开(公告)号：US12046460B1

公开(公告)日：2024-07-23

申请号：US18093138

申请日：2023-01-04

申请人： Applied Materials, Inc.

发明人： Yaoying Zhong ,  Siew Kit Hoi ,  Bridger Earl Hoerner

IPC分类号： C23C14/54 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  H01J37/32

CPC分类号： H01J37/32724 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/541 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/24585 ,  H01J2237/332

摘要： Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.

公开(公告)号：US12037676B1

公开(公告)日：2024-07-16

申请号：US18093141

申请日：2023-01-04

申请人： Applied Materials, Inc.

发明人： Yaoying Zhong ,  Siew Kit Hoi ,  Bridger Earl Hoerner

IPC分类号： C23C14/54 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  G05D23/19

CPC分类号： C23C14/541 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  G05D23/1931

摘要： Methods and apparatus for controlling substrate temperature, comprising: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on a substrate; and independently controlling a plurality of heaters in the substrate support, each heater corresponding to one zone of the plurality of zones, wherein each heater is controlled based on a target life and the temperature in each zone.

公开(公告)号：US12030333B2

公开(公告)日：2024-07-09

申请号：US17297138

申请日：2019-11-28

申请人： OBERTHUR FIDUCIAIRE SAS ,  Centre National de la Recherche Scientifique (CNRS) ,  ECOLE CENTRALE DE MARSEILLE ,  Universite D'Aix Marseille

发明人： Julien Lumeau ,  Fabien Lemarchand ,  Antonin Moreau ,  Thomas Begou ,  Julien Gillot ,  Xavier Borde

IPC分类号： B42D25/373 ,  B42D25/29 ,  B42D25/405 ,  C23C14/04 ,  C23C14/22 ,  C23C14/54

CPC分类号： B42D25/373 ,  B42D25/29 ,  B42D25/405 ,  C23C14/044 ,  C23C14/225 ,  C23C14/542

摘要： The present invention particularly relates to a method for physical vacuum deposition of a coating (R) comprising at least one material (M) on at least a portion of a front face (10) of a support (1), said at least one material (M) originating from an evaporation source or an atomisation source (2), wherein: —use is made of a support (1), at least a portion of the front face (10) of which is smooth, that is to say, does not have any roughness and/or reliefs and/or recesses; —said vacuum deposition is carried out while varying the thickness distribution of the material (M) on said front face (10), that is, while progressively varying the thickness deposited, from a central region (11) in the direction of at least one lateral region (12) contiguous to the central region (11), without modifying the position of the evaporation source or atomisation source (2) of the material particles (M).