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1.发明授权公开(公告)号：US11603589B2
公开(公告)日：2023-03-14
申请号：US16769661
申请日：2018-12-05
发明人： Patrick Morse
摘要： The present disclosure relates to systems and methods of additive manufacturing that reduce or eliminates defects in the bulk deposition material microstructure resulting from the additive manufacturing process. An additive manufacturing system comprises evaporating a deposition material to form an evaporated deposition material and ionizing the evaporated deposition material to form an ionized deposition material flux. After forming the ionized deposition material flux, the ionized deposition material flux is directed through an aperture, accelerated to a controlled kinetic energy level and deposited onto a surface of a substrate. The aperture mechanism may comprise a physical, electrical, or magnetic aperture mechanism. Evaporation of the deposition material may be performed with an evaporation mechanism comprised of resistive heating, inductive heating, thermal radiation, electron heating, and electrical arc source heating.
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2.发明授权公开(公告)号：US11908669B2
公开(公告)日：2024-02-20
申请号：US17570747
申请日：2022-01-07
发明人： Patrick Morse
CPC分类号： H01J37/3461 , C23C14/35 , H01F7/02 , H01J2237/002 , H01J2237/332
摘要： The present disclosure provides systems and methods of controlling a magnetically confined plasma sputtering process using the waste heat transferred from the plasma into the target material and then into thermally controlled magnetic field adjustment assemblies that modify the strength of the plasma confinement magnetic fields on the target material.
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3.发明申请公开(公告)号：US20220223392A1
公开(公告)日：2022-07-14
申请号：US17570747
申请日：2022-01-07
发明人： Patrick Morse
摘要： The present disclosure provides systems and methods of controlling a magnetically confined plasma sputtering process using the waste heat transferred from the plasma into the target material and then into thermally controlled magnetic field adjustment assemblies that modify the strength of the plasma confinement magnetic fields on the target material.
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公开(公告)号：US20240263297A1
公开(公告)日：2024-08-08
申请号：US18436260
申请日：2024-02-08
发明人： Patrick Morse
CPC分类号： C23C14/3442 , C23C14/54
摘要： The present disclosure provides a sputtering process comprising the steps of ionizing a process gas with a laser to form an ionized process gas and accelerating the ionized process gas into a target material surface using an electric field generated by at least one electrode.
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5.发明申请公开(公告)号：US20210180179A1
公开(公告)日：2021-06-17
申请号：US16769661
申请日：2018-12-05
发明人： Patrick Morse
摘要： The present disclosure relates to systems and methods of additive manufacturing that reduce or eliminates defects in the bulk deposition material microstructure resulting from the additive manufacturing process. An additive manufacturing system comprises evaporating a deposition material to form an evaporated deposition material and ionizing the evaporated deposition material to form an ionized deposition material flux. After forming the ionized deposition material flux, the ionized deposition material flux is directed through an aperture, accelerated to a controlled kinetic energy level and deposited onto a surface of a substrate. The aperture mechanism may comprise a physical, electrical, or magnetic aperture mechanism. Evaporation of the deposition material may be performed with an evaporation mechanism comprised of resistive heating, inductive heating, thermal radiation, electron heating, and electrical arc source heating.
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