公开(公告)号：US20240331975A1

公开(公告)日：2024-10-03

申请号：US18129285

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Shuchi Sunil Ojha ,  Soham Asrani ,  Praket Prakash Jha ,  Bhargav S. Citla ,  Jingmei Liang

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32146 ,  H01L21/02532 ,  H01L21/0262 ,  H01J37/32816 ,  H01J2237/182 ,  H01J2237/2001 ,  H01J2237/332 ,  H01J2237/3343 ,  H01J2237/336

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include etching the silicon-containing material from a sidewall of the feature within the substrate with the plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining silicon-containing material within the feature defined within the substrate.

公开(公告)号：US11469100B2

公开(公告)日：2022-10-11

申请号：US16817007

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yong Sun ,  Praket Prakash Jha ,  Jingmei Liang ,  Martin Jay Seamons ,  DongQing Li ,  Shashank Sharma ,  Abhilash J. Mayur ,  Wolfgang R. Aderhold

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H01J37/32

Abstract: A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

公开(公告)号：US12094709B2

公开(公告)日：2024-09-17

申请号：US17390151

申请日：2021-07-30

Applicant: Applied Materials, Inc.

Inventor： Jung Chan Lee ,  Mun Kyu Park ,  Jun Lee ,  Euhngi Lee ,  Kyu-Ha Shim ,  Deven Matthew Raj Mittal ,  Sungho Jo ,  Timothy Miller ,  Jingmei Liang ,  Praket Prakash Jha ,  Sanjay G. Kamath

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02271

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

公开(公告)号：US20230352349A1

公开(公告)日：2023-11-02

申请号：US18349930

申请日：2023-07-10

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/52 ,  C23C16/40 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01L21/02164 ,  C23C16/52 ,  C23C16/401 ,  H01L21/67288

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US20220115275A1

公开(公告)日：2022-04-14

申请号：US17070751

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US11967524B2

公开(公告)日：2024-04-23

申请号：US17089221

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Praket Prakash Jha ,  Shuchi Sunil Ojha ,  Jingmei Liang ,  Abhijit Basu Mallick ,  Shankar Venkataraman

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/76877 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31111 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/76802 ,  H10B41/27 ,  H10B43/27

Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.

公开(公告)号：US20240105499A1

公开(公告)日：2024-03-28

申请号：US17954565

申请日：2022-09-28

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Xinke Wang ,  Xiang Ji ,  Praket Prakash Jha

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76224 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/7688

Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.

公开(公告)号：US20220020594A1

公开(公告)日：2022-01-20

申请号：US16932801

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Praket Prakash Jha ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

公开(公告)号：US20240420950A1

公开(公告)日：2024-12-19

申请号：US18209732

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Xiang Ji ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Jingmei Liang

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor and depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-containing material from a sidewall of the feature.

公开(公告)号：US11615966B2

公开(公告)日：2023-03-28

申请号：US16932801

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Praket Prakash Jha ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/3065

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.