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    Integration of dual remote plasmas sources for flowable CVD
    1.
    发明授权
    Integration of dual remote plasmas sources for flowable CVD 有权

    公开(公告)号：US10934620B2

    公开(公告)日：2021-03-02

    申请号：US15822276

    申请日：2017-11-27

    Applicant: Applied Materials, Inc.

    Inventor： Ying Ma ,  Daemian Raj ,  Jay D. Pinson, II ,  DongQing Li ,  Jingmei Liang ,  Yizhen Zhang

    IPC: C23C16/455 ,  C23C16/44 ,  C23C16/54 ,  H01J37/32 ,  C23C16/452 ,  C23C16/458

    Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.

    LOW TEMPERATURE FLOWABLE CURING FOR STRESS ACCOMMODATION
    2.
    发明申请
    LOW TEMPERATURE FLOWABLE CURING FOR STRESS ACCOMMODATION 审中-公开
    低温流动固化应力应变

    公开(公告)号：US20140329027A1

    公开(公告)日：2014-11-06

    申请号：US13955640

    申请日：2013-07-31

    Applicant: Applied Materials, Inc.

    Inventor： Jingmei Liang ,  Nitin K. Ingle ,  Sukwon Hong ,  Abhishek Dube ,  DongQing Li

    IPC: B05D3/10 ,  B05D3/06 ,  B05D3/02

    CPC classification number: C23C16/56 ,  C23C16/401 ,  C23C16/452 ,  C23C16/50

    Abstract: Methods of forming gapfill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on a patterned substrate. The methods include non-thermally treating the silicon-and-hydrogen-containing layer at low substrate temperature to increase the concentration of Si—Si bonds while the silicon-and-hydrogen-containing layer remains soft. The flaccid layer is able to adjust to the departure of hydrogen from the film and retain a high density without developing a stress. Film qualify is further improved by then inserting O between Si—Si bonds to expand the film in the trenches thereby converting the silicon-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer.

    Abstract translation: 描述形成间隙填充含硅层的方法。 所述方法可以包括在图案化衬底上提供或形成含硅和氢的层。 这些方法包括在低衬底温度下非热处理含硅和氢的层以增加Si-Si键的浓度，同时含硅和氢的层保持柔软。 松弛层能够适应于离开膜的氢离子并保持高密度而不产生应力。 然后通过在Si-Si键之间插入O以使沟槽中的膜膨胀，从而将含硅和含氢层转化为含硅和氧的层，进一步改善了膜合格性。

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