公开(公告)号：US12094709B2

公开(公告)日：2024-09-17

申请号：US17390151

申请日：2021-07-30

申请人： Applied Materials, Inc.

发明人： Jung Chan Lee ,  Mun Kyu Park ,  Jun Lee ,  Euhngi Lee ,  Kyu-Ha Shim ,  Deven Matthew Raj Mittal ,  Sungho Jo ,  Timothy Miller ,  Jingmei Liang ,  Praket Prakash Jha ,  Sanjay G. Kamath

IPC分类号： H01L21/02

CPC分类号： H01L21/0234 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02271

摘要： Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

公开(公告)号：US20220102179A1

公开(公告)日：2022-03-31

申请号：US17036048

申请日：2020-09-29

申请人： Applied Materials, Inc.

发明人： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Rana Howlader ,  Abhigyan Keshri ,  Sanjay G. Kamath ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Shailendra Srivastava ,  Kristopher R. Enslow ,  Xinhai Han ,  Deenesh Padhi ,  Edward P. Hammond

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01J37/32

摘要： Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

公开(公告)号：US11776835B2

公开(公告)日：2023-10-03

申请号：US17036048

申请日：2020-09-29

申请人： Applied Materials, Inc.

发明人： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Rana Howlader ,  Abhigyan Keshri ,  Sanjay G. Kamath ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Shailendra Srivastava ,  Kristopher R. Enslow ,  Xinhai Han ,  Deenesh Padhi ,  Edward P. Hammond

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/6833 ,  H01J37/32183 ,  H01J37/32697 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67103

摘要： Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

公开(公告)号：US11538677B2

公开(公告)日：2022-12-27

申请号：US17009002

申请日：2020-09-01

申请人： Applied Materials, Inc.

发明人： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC分类号： H01L21/02 ,  C23C16/34

摘要： Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

公开(公告)号：US10950430B2

公开(公告)日：2021-03-16

申请号：US16444865

申请日：2019-06-18

申请人： Applied Materials, Inc.

发明人： Vinayak Veer Vats ,  Hang Yu ,  Deenesh Padhi ,  Changling Li ,  Gregory M. Amico ,  Sanjay G. Kamath

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/306 ,  H01L21/3065

摘要： Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.

公开(公告)号：US20200176241A1

公开(公告)日：2020-06-04

申请号：US16676097

申请日：2019-11-06

申请人： Applied Materials, Inc.

发明人： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC分类号： H01L21/02 ,  H01J37/32 ,  H01L21/311 ,  C23C16/34 ,  C23C16/56

摘要： Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

公开(公告)号：US11600468B2

公开(公告)日：2023-03-07

申请号：US16748632

申请日：2020-01-21

申请人： Applied Materials, Inc.

发明人： Madhu Santosh Kumar Mutyala ,  Sanjay G. Kamath ,  Deenesh Padhi ,  Arkajit Roy Barman

IPC分类号： H01J37/32 ,  H01L21/67 ,  H05B1/02 ,  C23C16/455

摘要： Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.

公开(公告)号：US20220068630A1

公开(公告)日：2022-03-03

申请号：US17009002

申请日：2020-09-01

申请人： Applied Materials, Inc.

发明人： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC分类号： H01L21/02 ,  C23C16/34

摘要： Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

公开(公告)号：US11217443B2

公开(公告)日：2022-01-04

申请号：US16676097

申请日：2019-11-06

申请人： Applied Materials, Inc.

发明人： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

摘要： Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.