公开(公告)号：US20240321561A1

公开(公告)日：2024-09-26

申请号：US18672789

申请日：2024-05-23

Applicant: VELVETCH LLC

Inventor： Stewart Francis Sando ,  Samir John Anz ,  David Irwin Margolese ,  William Andrew Goddard

IPC: H01J37/32 ,  H05H1/54

CPC classification number: H01J37/32697 ,  H01J37/32027 ,  H05H1/54

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

公开(公告)号：US20240258075A1

公开(公告)日：2024-08-01

申请号：US18416580

申请日：2024-01-18

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn BOYD, JR. ,  Govinda RAJ ,  Matthew James BUSCHE

IPC: H01J37/32 ,  C23C16/458 ,  G01D5/26 ,  G01D11/24 ,  G01L11/02 ,  H01L21/683

CPC classification number: H01J37/3244 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/3299 ,  H01L21/6831 ,  H01L21/6833 ,  G01D5/26 ,  G01D5/266 ,  G01D5/268 ,  G01D11/245 ,  G01L11/025 ,  H01J2237/334

Abstract: Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to allow gas to flow past the sensor assembly when positioned in the gas hole.

公开(公告)号：US20240112895A1

公开(公告)日：2024-04-04

申请号：US18538165

申请日：2023-12-13

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01L21/67248 ,  H01L21/6833 ,  H01J37/32642 ,  H01J2237/002 ,  H01J2237/24585

Abstract: The plasma processing apparatus includes a chamber body, a stage, a gas supply mechanism, a DC power supply, a radio-frequency power supply, and a controller. The gas supply is configured to supply a heat transfer gas to the upper surface of the electrostatic chuck. The controller is configured to control the DC power supply. The controller controls the DC power supply to apply, to the electrostatic chuck, a voltage derived by combining an output of a first function that outputs a smaller value as the absolute value of a self-bias voltage generated according to the plasma becomes larger and an output of a second function that outputs a larger value as the pressure of the heat transfer gas supplied to the upper surface of the electrostatic chuck by the gas supply increases.

公开(公告)号：US20240096597A1

公开(公告)日：2024-03-21

申请号：US18519750

申请日：2023-11-27

Applicant: Kokusai Electric Corporation

Inventor： Takeshi YASUI ,  Katsunori FUNAKI ,  Yasutoshi TSUBOTA ,  Koichiro HARADA

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32697 ,  C23C14/0068

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

公开(公告)号：US11915913B2

公开(公告)日：2024-02-27

申请号：US18302854

申请日：2023-04-19

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn Boyd, Jr. ,  Govinda Raj ,  Matthew James Busche

IPC: G01D5/26 ,  H01J37/32 ,  H01L21/683 ,  C23C16/458 ,  G01L11/02 ,  G01D11/24

CPC classification number: H01J37/3244 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/3299 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/6833 ,  G01D5/26 ,  G01D5/266 ,  G01D5/268 ,  G01D11/245 ,  G01L11/025 ,  H01J2237/334

Abstract: Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support assembly has a puck having a workpiece support surface, a gas hole formed through the workpiece support surface, and a sensor assembly disposed in the gas hole. The substrate support assembly further has a transition conduit fluidly coupled to the gas hole, and a connection coupled to the transition conduit. The connection has a first opening fluidly coupled to the transition conduit and a second opening coupled to a control system, where the control system is coupled to the sensor assembly.

公开(公告)号：US20230420218A1

公开(公告)日：2023-12-28

申请号：US18465113

申请日：2023-09-11

Applicant: Lam Research Corporation

Inventor： Hyungjoon Kim ,  Sunil Kapoor ,  Karl Leeser ,  Vince Burkhart

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/505

CPC classification number: H01J37/32082 ,  H01L21/6831 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32706 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32174 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/68764

Abstract: An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.

公开(公告)号：US11842915B2

公开(公告)日：2023-12-12

申请号：US17418308

申请日：2020-01-23

Applicant: KYOCERA Corporation

Inventor： Naoki Furukawa

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32697 ,  H01J37/32733 ,  H01J2237/2007

Abstract: An insulating substrate has a sample holding surface. A support is bonded to the insulating substrate. A first through-hole in the insulating substrate and a second through-hole in the support are continuous with each other to serve as a gas inlet. A porous member is located in the second through-hole. The second through-hole has, at its opening adjacent to the insulating substrate (opening adjacent to the substrate), a larger diameter than the first through-hole. The opening of the second through-hole and an electrostatic attraction electrode are at different positions in a direction parallel to the sample holding surface. The electrostatic attraction electrode and the second through-hole avoid overlapping each other as viewed from above.

公开(公告)号：US11776835B2

公开(公告)日：2023-10-03

申请号：US17036048

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Rana Howlader ,  Abhigyan Keshri ,  Sanjay G. Kamath ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Shailendra Srivastava ,  Kristopher R. Enslow ,  Xinhai Han ,  Deenesh Padhi ,  Edward P. Hammond

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32183 ,  H01J37/32697 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67103

Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

公开(公告)号：US11715652B2

公开(公告)日：2023-08-01

申请号：US16583711

申请日：2019-09-26

Applicant: NGK INSULATORS, LTD.

Inventor： Masaki Ishikawa ,  Yuji Akatsuka

IPC: H01L21/67 ,  C04B35/111 ,  C04B35/64 ,  H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67098 ,  C04B35/111 ,  C04B35/64 ,  H01J37/32697 ,  H01J37/32724 ,  H01L21/6833 ,  H01L21/6838 ,  H01L21/68785

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode, a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion, a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the ring-shaped joint portion, and a gas flow channel. The gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in the thickness direction of the ceramic plate and an internal gas flow channel that passes from the upper surface to the lower surface of the dense plug while winding through the dense plug. The gas flow channel passes inside of an inner periphery of the joint portion.

公开(公告)号：US11682554B2

公开(公告)日：2023-06-20

申请号：US17235241

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02167 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/31116 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32697 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/20214 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature above about 250° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.