公开(公告)号：US11972940B2

公开(公告)日：2024-04-30

申请号：US17722648

申请日：2022-04-18

申请人： Applied Materials, Inc.

发明人： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC分类号： H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

摘要： Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US20220223409A1

公开(公告)日：2022-07-14

申请号：US17144972

申请日：2021-01-08

申请人： Applied Materials, Inc.

发明人： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/02

摘要： Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.

公开(公告)号：US20240282632A1

公开(公告)日：2024-08-22

申请号：US18109365

申请日：2023-02-14

申请人： Applied Materials, Inc.

发明人： Zachary J. Devereaux ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Zeqing Shen ,  Susmit Singha Roy ,  Mark J. Saly ,  Abhijit Basu Mallick

IPC分类号： H01L21/768 ,  C23C16/04 ,  C23C16/32 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC分类号： H01L21/76897 ,  C23C16/042 ,  C23C16/32 ,  C23C16/402 ,  C23C16/45527 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/76802

摘要： A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

公开(公告)号：US11732352B2

公开(公告)日：2023-08-22

申请号：US17173871

申请日：2021-02-11

申请人： Applied Materials, Inc.

发明人： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： C23C16/40 ,  C23C16/52

CPC分类号： C23C16/402 ,  C23C16/52

摘要： Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.

公开(公告)号：US20230058831A1

公开(公告)日：2023-02-23

申请号：US17407533

申请日：2021-08-20

申请人： Applied Materials, Inc.

发明人： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L21/56

摘要： Exemplary methods of semiconductor processing may include etching one or more features partially through a stack of layers formed on a substrate. The methods may include halting the etching prior to penetrating fully through the stack of layers formed on the substrate. The methods may include forming a layer of carbon-containing material along the stack of layers on the substrate. The layer of carbon-containing material may include a metal. The methods may include etching the one or more features fully through the stack of layers on the substrate.

公开(公告)号：US20230057258A1

公开(公告)日：2023-02-23

申请号：US17407504

申请日：2021-08-20

申请人： Applied Materials, Inc.

发明人： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/768 ,  H01L21/311

摘要： Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.

公开(公告)号：US20220336212A1

公开(公告)日：2022-10-20

申请号：US17235241

申请日：2021-04-20

申请人： Applied Materials, Inc.

发明人： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01J37/32

摘要： Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature above about 250° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.

公开(公告)号：US20210305041A1

公开(公告)日：2021-09-30

申请号：US17211452

申请日：2021-03-24

申请人： Applied Materials, Inc.

发明人： Bo Qi ,  Zeqing Shen ,  Abhijit Basu Mallick

IPC分类号： H01L21/02

摘要： Exemplary methods of semiconductor processing may include providing a boron-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the boron-containing precursor and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a boron-and-carbon-containing layer on the substrate.

公开(公告)号：US12027374B2

公开(公告)日：2024-07-02

申请号：US17246209

申请日：2021-04-30

申请人： Applied Materials, Inc.

发明人： Zeqing Shen ,  Bo Qi ,  Abhijit B. Mallick

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31144 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31111

摘要： Embodiments of the present disclosure generally relate to fabricating electronic devices, such as memory devices. In one or more embodiments, a method for forming a device includes forming a film stack on a substrate, where the film stack contains a plurality of alternating layers of oxide layers and nitride layers and has a stack thickness, and etching the film stack to a first depth to form a plurality of openings between a plurality of structures. The method includes depositing an etch protection liner containing amorphous-silicon on the sidewalls and the bottoms of the structures, removing the etch protection liner from at least the bottoms of the openings, forming a plurality of holes by etching the film stack in the openings to further extend each bottom of the openings to a second depth of the hole, and removing the etch protection liner from the sidewalls.

公开(公告)号：US20240120193A1

公开(公告)日：2024-04-11

申请号：US17960569

申请日：2022-10-05

申请人： Applied Materials, Inc.

发明人： Shankar Venkataraman ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Lakmal C. Kalutarage ,  Jongbeom Seo ,  Sai Hooi Yeong ,  Benjamin Colombeau ,  Balasubramanian Pranatharthiharan

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L29/66

CPC分类号： H01L21/02126 ,  H01L21/0206 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/31116 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/42392

摘要： Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.