公开(公告)号：US20250006555A1

公开(公告)日：2025-01-02

申请号：US18216127

申请日：2023-06-29

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Xinke Wang ,  Liqi Wu ,  Qihao Zhu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thampson

IPC: H01L21/768

Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metal after use of a flowable polymer to protect a substrate surface within a feature. A first metal layer is deposited by physical vapor deposition (PVD). The semiconductor substrate surface is exposed to one or more monomers to form a flowable and flexible polymer film on the first metal layer within the at least one feature. The flowable polymer film forms on the first metal layer on the bottom. The one or more monomers are selected from one or more of amines with bi-functional groups, aldehydes with bi-functional groups, cyanates with bi-functional groups, ketones with bi-functional groups, and alcohols with bi-functional groups. At least a portion of the first metal layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed.

公开(公告)号：US12110584B2

公开(公告)日：2024-10-08

申请号：US17361231

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: C23C16/30 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L21/02

CPC classification number: C23C16/305 ,  C23C16/04 ,  C23C16/06 ,  C23C16/4485 ,  H01L21/0228

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US20240332014A1

公开(公告)日：2024-10-03

申请号：US18614045

申请日：2024-03-22

Applicant: Applied Materials, Inc ,  National University of Singapore

Inventor： Xinke Wang ,  Long Liu ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/324

CPC classification number: H01L21/02573 ,  H01L21/02115 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/324

Abstract: Molecular layer deposition (MLD) is used to provide conformal and uniform doping technology for HAR and reentrant structures. MLD is used to deposit a conformal carbon-based film that contains a doping element. Thermal annealing is then used to make the doping element diffuse into the semiconductor material. For HAR structures, a conformal layer is used with low temperature doping, precise control, and the carbon-based film can be easily removed during doping or after doping. The amount of doping can be controlled by changing the thickness of MLD carbon-based film.

公开(公告)号：US12060370B2

公开(公告)日：2024-08-13

申请号：US17146878

申请日：2021-01-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: C07F11/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C07F11/00 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/0254 ,  C23C16/45527 ,  C23C16/56

Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20240047193A1

公开(公告)日：2024-02-08

申请号：US18378843

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Thomas Knisley ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02

CPC classification number: H01L21/0214 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

公开(公告)号：US20230420259A1

公开(公告)日：2023-12-28

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/3081

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US20230386833A1

公开(公告)日：2023-11-30

申请号：US17824889

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC: H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/0271 ,  C23C14/16 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76816 ,  H01L21/76831

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

公开(公告)号：US11823893B2

公开(公告)日：2023-11-21

申请号：US17068188

申请日：2020-10-12

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Thomas Knisley ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02

CPC classification number: H01L21/0214 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

公开(公告)号：US20230132200A1

公开(公告)日：2023-04-27

申请号：US17971212

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC: H01L21/768 ,  H01L21/02 ,  B05D1/00

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20230002888A1

公开(公告)日：2023-01-05

申请号：US17365919

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark Saly ,  David Thompson

IPC: C23C16/18 ,  C23C16/50 ,  C23C16/455

Abstract: Methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising a metal selected from the group consisting of molybdenum (Mo), tungsten (W), osmium (Os), rhenium (Re), iridium (Ir), nickel (Ni) and ruthenium (Ru) and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C0-C10 alkyl, cycloalkyl, alkenyl, or alkynyl group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film; and exposing the carbon-less iodine-containing metal film to a reductant to form a metal film. Some embodiments deposit a metal film with greater than or equal to 90% metal species on an atomic basis.