Group VI precursor compounds
    4.
    发明授权

    公开(公告)号:US11807653B2

    公开(公告)日:2023-11-07

    申请号:US17736855

    申请日:2022-05-04

    Applicant: ENTEGRIS, INC.

    CPC classification number: C07F11/00 H01L21/02192 H01L21/32051

    Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

    METAL ORGANIC COMPOUNDS
    6.
    发明公开

    公开(公告)号:US20230295203A1

    公开(公告)日:2023-09-21

    申请号:US17995132

    申请日:2020-04-01

    CPC classification number: C07F11/00

    Abstract: The invention concerns a process for preparing an essentially silicon (Si) free compounds of the general formula [M(O)(OR)y], wherein M = Mo, y = 3 or M = W, y = 3 or 4. Furthermore, it is directed towards compounds obtained by the aforementioned process and towards the use of such an obtained compound. Another objective of the herein described invention are essentially silicon free compounds of the general formula MOXy or [MOXy(solv)p], prepared using the aforementioned process, wherein M = Mo, y = 3 or M = W, y = 3 or 4, X = Cl or Br, solv = an oxidizing agent Z binding or coordinating to M via at least one donor atom, p = 1 or 2. The invention is also directed towards the use of essentially silicon free compounds prepared using the aforementioned process of the general formula MOXy or [MOXy(solv)p],

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