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    IMAGING DEVICE
    3.
    发明公开
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20240349525A1

    公开(公告)日：2024-10-17

    申请号：US18753873

    申请日：2024-06-25

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： Morikazu TSUNO

    IPC分类号： H10K39/32 ,  H01L27/146

    CPC分类号： H10K39/32 ,  H01L27/14614 ,  H01L27/14665 ,  H01L27/14603

    摘要： An imaging device includes a photoelectric converter that converts incident light to charge, a semiconductor substrate that includes an element isolation region and a first impurity region of a first conductivity type, the first impurity region being electrically connected to the photoelectric converter, a plug that includes a first semiconductor, the plug being connected directly to the first impurity region, a pad that includes a second semiconductor, the pad being connected directly to the plug, and a first transistor that includes the first impurity region as one of a source and a drain and includes a first gate. The first impurity region is positioned between the first gate and a first portion of the element isolation region in plan view. The pad overlaps the first gate and the first portion in plan view.

    IMAGING ELEMENT AND IMAGING DEVICE
    4.
    发明公开
    IMAGING ELEMENT AND IMAGING DEVICE 审中-公开

    公开(公告)号：US20240347554A1

    公开(公告)日：2024-10-17

    申请号：US18685326

    申请日：2022-03-17

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： KAZUNORI KURISHIMA ,  MASAKAZU MUROYAMA

    IPC分类号： H01L27/146 ,  H10K39/32

    CPC分类号： H01L27/14601 ,  H10K39/32

    摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode that are disposed in parallel; a third electrode that is disposed to be opposed to the first electrode and the second electrode; a photoelectric conversion layer that is provided between the first electrode and second electrode, and the third electrode, and includes an organic material; and a semiconductor layer including a first layer and a second layer that are stacked in order from side of the first electrode and the second electrode between the first electrode and second electrode, and the photoelectric conversion layer. The first layer includes a first oxide material having a carrier concentration of 1E19 cm−3 or more and 1E21 cm−3 or less and bond dissociation energy of 3.58 eV or more and 5.50 eV or less, and the second layer includes the first oxide material and a second oxide material having a band gap of 4.5 eV or more and bond dissociation energy of 4.0 eV or more and 8.8 eV or less.

    Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element
    5.
    发明授权
    Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element 有权

    公开(公告)号：US12120897B2

    公开(公告)日：2024-10-15

    申请号：US17424582

    申请日：2020-01-21

    申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Takushi Shigetoshi ,  Hideaki Togashi ,  Junpei Yamamoto ,  Shinpei Fukuoka ,  Moe Takeo ,  Sho Nishida

    IPC分类号： H10K39/32

    CPC分类号： H10K39/32

    摘要： A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

    Photoelectric conversion devices
    7.
    发明授权
    Photoelectric conversion devices 有权

    公开(公告)号：US12108613B2

    公开(公告)日：2024-10-01

    申请号：US17510576

    申请日：2021-10-26

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Keewon Kim ,  Byeongtaek Bae ,  Dail Eom ,  Minkyung Lee ,  Hajin Lim

    IPC分类号： H10K39/32 ,  H10K30/87

    CPC分类号： H10K39/32 ,  H10K30/87

    摘要： A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.

    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF
    8.
    发明公开
    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20240313013A1

    公开(公告)日：2024-09-19

    申请号：US18676161

    申请日：2024-05-28

    申请人： SONY GROUP CORPORATION

    发明人： Masahiro JOEI ,  Kenichi MURATA ,  Fumihiko KOGA ,  Iwao YAGI ,  Shintarou HIRATA ,  Hideaki TOGASHI ,  Yosuke SAITO

    IPC分类号： H01L27/146 ,  H01L29/41 ,  H04N25/771 ,  H10K39/32

    CPC分类号： H01L27/14612 ,  H01L27/14636 ,  H01L27/14685 ,  H01L29/41 ,  H04N25/771 ,  H10K39/32

    摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.