An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode that are disposed in parallel; a third electrode that is disposed to be opposed to the first electrode and the second electrode; a photoelectric conversion layer that is provided between the first electrode and second electrode, and the third electrode, and includes an organic material; and a semiconductor layer including a first layer and a second layer that are stacked in order from side of the first electrode and the second electrode between the first electrode and second electrode, and the photoelectric conversion layer. The first layer includes a first oxide material having a carrier concentration of 1E19 cm−3 or more and 1E21 cm−3 or less and bond dissociation energy of 3.58 eV or more and 5.50 eV or less, and the second layer includes the first oxide material and a second oxide material having a band gap of 4.5 eV or more and bond dissociation energy of 4.0 eV or more and 8.8 eV or less.