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公开(公告)号:US20240273938A1
公开(公告)日:2024-08-15
申请号:US18637587
申请日:2024-04-17
申请人: IBMETRIX LIMITED
发明人: Arokia Nathan , William Byrne
IPC分类号: G06V40/13 , G06V40/12 , H01L27/144 , H10K30/60
CPC分类号: G06V40/1318 , G06V40/1394 , H01L27/1446 , H10K30/60
摘要: A photo-capacitance sensor includes an input surface and one or more light sources arranged to illuminate a portion of the input surface. The photo-capacitance sensor also includes an array of photo-capacitors arranged to receive light from the one or more light sources which is reflected from an object in contact with, or proximate to, the illuminated portion of the input surface. The array of photo-capacitors is configured for detecting a reflective pattern of the object.
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公开(公告)号:US11983954B2
公开(公告)日:2024-05-14
申请号:US18042104
申请日:2021-08-18
申请人: IBMETRIX LIMITED
发明人: Arokia Nathan , William Byrne
IPC分类号: G06V40/13 , G06V40/12 , H01L27/144 , H10K30/60
CPC分类号: G06V40/1318 , G06V40/1394 , H01L27/1446 , H10K30/60
摘要: A photo-capacitance sensor includes an input surface and one or more light sources arranged to illuminate a portion of the input surface. The photo-capacitance sensor also includes an array of photo-capacitors arranged to receive light from the one or more light sources which is reflected from an object in contact with, or proximate to, the illuminated portion of the input surface. The array of photo-capacitors is configured for detecting a reflective pattern of the object.
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公开(公告)号:US20240147743A1
公开(公告)日:2024-05-02
申请号:US18184287
申请日:2023-03-15
发明人: Johnny Chung Yin Ho , Pengshan Xie , Wei Wang , You Meng
CPC分类号: H10K30/671 , G11C11/54 , H10K30/10 , H10K30/60 , H10K30/84 , H10K85/113 , H10K85/215
摘要: The large-scale artificial synaptic device arrays based on the organic molecule-nanowire heterojunctions with tunable photoconductivity are proposed and demonstrated. The organic thin films of p-type 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT) or n-type phenyl-C61-butyric acid methyl ester (PC61BM) are used to wrap the InGaAs nanowire parallel arrays to configure two different type-I heterojunctions, respectively. Due to the difference in carrier injection, persistent negative photoconductivity (NPC) or positive photoconductivity (PPC) are achieved in these heterojunctions. The irradiation with different wavelengths (solar-blind to visible ranges) can stimulate the heterojunction devices, effectively mimicking the synaptic behaviors with two different photoconductivities. Evidently, these photosynaptic devices are illustrated with retina-like behaviors and capabilities for large-area integration, which reveals their promising potential for artificial visual systems.
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公开(公告)号:US20230389342A1
公开(公告)日:2023-11-30
申请号:US18323287
申请日:2023-05-24
发明人: TOMONA YAMAGUCHI
IPC分类号: H10K30/35 , H10K30/86 , H10K39/38 , H10K30/60 , H10K39/32 , H10K85/30 , H10K85/10 , H10K85/60
CPC分类号: H10K30/35 , H10K30/86 , H10K39/38 , H10K30/60 , H10K39/32 , H10K85/30 , H10K85/115 , H10K85/615 , H10K85/654 , B82Y30/00
摘要: A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):
E2>E1 (1)
E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element
E2 [eV]: band gap of the first organic compound
E3-
公开(公告)号:US20240292641A1
公开(公告)日:2024-08-29
申请号:US18567612
申请日:2022-06-22
发明人: Yasuharu UJIIE , Yuki NEGISHI , Yosuke SAITO , Mari ICHIMURA
CPC分类号: H10K50/11 , H10K30/60 , H10K50/15 , H10K85/211 , H10K85/346 , H10K85/622 , H10K85/633 , H10K85/654 , H10K85/6572 , H10K85/6576 , H10K85/658 , H10K2101/40
摘要: A first semiconductor element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed the first electrode; and an organic semiconductor layer that is provided between the first electrode and the second electrode, and including an organic semiconductor material, the organic semiconductor material having a crystal density of greater than 1.26 g/cm3 and less than 1.50 g/cm3 in powder form by X-ray structure analysis, and a molecular weight of 1200 or less, and being available for vacuum deposition film formation.
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公开(公告)号:US20240276746A1
公开(公告)日:2024-08-15
申请号:US18565774
申请日:2022-07-13
发明人: Munetomo INOUE , Kentaro HAYASHI
CPC分类号: H10K39/32 , H10K30/60 , H10K30/86 , H10K85/211 , H10K85/622 , H10K85/633 , H10K85/636 , H10K85/654 , H10K85/6572 , H10K85/6574 , H10K85/6576 , H10K85/658 , H10K2101/30
摘要: Provided are a material that achieves higher sensitivity and higher resolution of a photoelectric conversion element for imaging, and a photoelectric conversion element using the above material. A material for a photoelectric conversion element for imaging including a carbazole compound represented by (Cz)-L1-(Cz) and having a structure in which two carbazole rings (Cz) are bonded with L1, wherein at least one of L1 and a substituent Ar substituted on the carbazole rings is a group having an aromatic ring structure selected from the following formula (4) or (5). (Here, a ring A is represented by formula (5A); X1 represents O, S, Se, N—R, or N; and X2 represents O, S, or Se.)
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