-
公开(公告)号：US20220085110A1
公开(公告)日：2022-03-17
申请号：US17424582
申请日：2020-01-21
发明人： Takushi SHIGETOSHI , Hideaki TOGASHI , Junpei YAMAMOTO , Shinpei FUKUOKA , Moe TAKEO , Sho NISHIDA
IPC分类号： H01L27/30
摘要： A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.
-
公开(公告)号：US20240096914A1
公开(公告)日：2024-03-21
申请号：US18523054
申请日：2023-11-29
发明人： Akira FURUKAWA , Yoshihiro ANDO , Hideaki TOGASHI , Fumihiko KOGA
CPC分类号： H01L27/14614 , H01L27/14605 , H01L27/14609 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14647 , H04N23/45 , H04N23/55 , H10K30/30 , H10K30/81 , H10K39/32 , Y02E10/549
摘要： Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.
-
公开(公告)号：US20220311943A1
公开(公告)日：2022-09-29
申请号：US17638318
申请日：2020-09-03
发明人： Yusuke MURAKAWA , Hideaki TOGASHI , Yoshito NAGASHIMA , Akira FURUKAWA , Yoshihiro ANDO , Yasumasa AKUTAGAWA , Taku MINODA , Hiroki IWASHITA , Takahito NIWA , Sho NISHIDA , Mikio ISHIMARU
IPC分类号： H04N5/232 , H01L27/146
摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.
-
4.发明公开公开(公告)号：US20240266379A1
公开(公告)日：2024-08-08
申请号：US18634620
申请日：2024-04-12
发明人： Hideaki TOGASHI , Kosuke NAKANISHI
IPC分类号： H01L27/146 , H01L21/8234 , H01L23/48 , H01L27/06 , H01L27/088 , H01L29/08 , H01L29/423 , H01L29/78
CPC分类号： H01L27/14636 , H01L21/823456 , H01L21/823487 , H01L23/481 , H01L27/088 , H01L27/14612 , H01L27/14614 , H01L27/14638 , H01L27/14643 , H01L27/14645 , H01L27/14667 , H01L27/14689 , H01L29/0847 , H01L29/4236 , H01L29/42376 , H01L29/7827 , H01L21/823418 , H01L27/0694 , H01L27/1464 , H01L29/78
摘要： A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.
-
公开(公告)号：US20240145517A1
公开(公告)日：2024-05-02
申请号：US18545270
申请日：2023-12-19
发明人： Kenichi MURATA , Masahiro JOEI , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO , Shingo TAKAHASHI
IPC分类号： H01L27/146 , H04N25/76
CPC分类号： H01L27/14643 , H01L27/14623 , H04N25/76
摘要： Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.
-
公开(公告)号：US20240096922A1
公开(公告)日：2024-03-21
申请号：US18517263
申请日：2023-11-22
发明人： Hideaki TOGASHI
IPC分类号： H01L27/146 , H01L21/768 , H01L23/48 , H04N25/77 , H04N25/79
CPC分类号： H01L27/14636 , H01L21/76898 , H01L23/481 , H01L27/1464 , H01L27/14643 , H01L27/14647 , H04N25/77 , H04N25/79 , H01L21/7682 , H01L2924/0002 , H04N25/75
摘要： There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.
-
公开(公告)号：US20220336521A1
公开(公告)日：2022-10-20
申请号：US17733809
申请日：2022-04-29
发明人： Hideaki TOGASHI , Fumihiko KOGA , Tetsuji YAMAGUCHI , Shintarou HIRATA , Taiichiro WATANABE , Yoshihiro ANDO , Toyotaka KATAOKA , Satoshi KEINO , Yukio KANEDA
IPC分类号： H01L27/148 , H01L27/30 , H01L27/146 , H01L51/42 , H01L51/44
摘要： An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
-
公开(公告)号：US20240313013A1
公开(公告)日：2024-09-19
申请号：US18676161
申请日：2024-05-28
发明人： Masahiro JOEI , Kenichi MURATA , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO
IPC分类号： H01L27/146 , H01L29/41 , H04N25/771 , H10K39/32
CPC分类号： H01L27/14612 , H01L27/14636 , H01L27/14685 , H01L29/41 , H04N25/771 , H10K39/32
摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.
-
公开(公告)号：US20220415969A1
公开(公告)日：2022-12-29
申请号：US17778227
申请日：2020-11-12
发明人： Masahiro JOEI , Kenichi MURATA , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO , Nobutoshi FUJII
摘要： A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.
-
公开(公告)号：US20220093660A1
公开(公告)日：2022-03-24
申请号：US17539956
申请日：2021-12-01
发明人： Akira FURUKAWA , Yoshihiro ANDO , Hideaki TOGASHI , Fumihiko KOGA
IPC分类号： H01L27/146 , H04N5/225
摘要： Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.062 秒)
