-
公开(公告)号：US20230329017A1
公开(公告)日：2023-10-12
申请号：US18142975
申请日：2023-05-03
发明人： Yohei HIROSE , Iwao YAGI , Shintarou HIRATA , Hideaki MOGI , Masashi BANDO , Osamu ENOKI
CPC分类号： H10K39/32 , H04N25/70 , H10K30/353 , H10K30/82 , H10K2102/351
摘要： A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and- an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.
-
公开(公告)号：US20240145517A1
公开(公告)日：2024-05-02
申请号：US18545270
申请日：2023-12-19
发明人： Kenichi MURATA , Masahiro JOEI , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO , Shingo TAKAHASHI
IPC分类号： H01L27/146 , H04N25/76
CPC分类号： H01L27/14643 , H01L27/14623 , H04N25/76
摘要： Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.
-
公开(公告)号：US20240260285A1
公开(公告)日：2024-08-01
申请号：US18630800
申请日：2024-04-09
发明人： Hideaki TOGASHI , Iwao YAGI , Masahiro JOEI , Fumihiko KOGA , Kenichi MURATA , Shintarou HIRATA , Yosuke SAITO , Akira FURUKAWA
IPC分类号： H10K39/32
CPC分类号： H10K39/32
摘要： There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor including a stacked structure that includes a semiconductor substrate, a first photoelectric converter provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode a photoelectric conversion film, and a readout electrode are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.
-
公开(公告)号：US20230262998A1
公开(公告)日：2023-08-17
申请号：US18106885
申请日：2023-02-07
发明人： Yuta HASEGAWA , Masashi BANDO , Shintarou HIRATA , Hideaki MOGI , Iwao YAGI , Yasuharu UJIIE , Yuki NEGISHI
CPC分类号： H10K39/32 , H04N25/63 , H10K85/211 , H10K85/649
摘要： There is provided an imaging device and an electronic apparatus including an imaging device, where the imaging device includes: a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, where the second organic semiconductor material comprises a subphthalocyanine material, and where the second organic semiconductor material has a highest occupied molecular orbital level ranging from −6 eV to −6.7 eV.
-
公开(公告)号：US20220407019A1
公开(公告)日：2022-12-22
申请号：US17773326
申请日：2020-10-20
发明人： Yoshiyuki HIRANO , Yuta HASEGAWA , Osamu ENOKI , Iwao YAGI , Yosuke SAITO , Masami SENOH
IPC分类号： H01L51/00
摘要： A photoelectric conversion element 10A according to an embodiment of the present disclosure includes: a first electrode 21; a second electrode 23 that is disposed to be opposed to the first electrode 21; and a photoelectric conversion layer 22 that is provided between the first electrode 21 and the second electrode 23. The photoelectric conversion layer 22 includes a hole transporting material as a first organic semiconductor material. The hole transporting material absorbs blue light.
-
公开(公告)号：US20230215880A1
公开(公告)日：2023-07-06
申请号：US17915619
申请日：2021-03-24
发明人： Masahiro JOEI , Shintarou HIRATA , Tomiyuki YUKAWA , Ryosuke SUZUKI , Hiroshi NAKANO , Toshihiko HAYASHI , Ryotaro TAKAGUCHI , Iwao YAGI , Kenichi MURATA
IPC分类号： H01L27/142 , H01L27/146 , H10K39/32
CPC分类号： H01L27/142 , H01L27/1462 , H01L27/14647 , H10K39/32 , H01L27/14612 , H01L27/14638
摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.
-
公开(公告)号：US20220005872A1
公开(公告)日：2022-01-06
申请号：US17478732
申请日：2021-09-17
发明人： Yohei HIROSE , Iwao YAGI , Shintarou HIRATA , Hideaki MOGI , Masashi BANDO , Osamu ENOKI
摘要： A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and—an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.
-
公开(公告)号：US20240313013A1
公开(公告)日：2024-09-19
申请号：US18676161
申请日：2024-05-28
发明人： Masahiro JOEI , Kenichi MURATA , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO
IPC分类号： H01L27/146 , H01L29/41 , H04N25/771 , H10K39/32
CPC分类号： H01L27/14612 , H01L27/14636 , H01L27/14685 , H01L29/41 , H04N25/771 , H10K39/32
摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.
-
公开(公告)号：US20220415969A1
公开(公告)日：2022-12-29
申请号：US17778227
申请日：2020-11-12
发明人： Masahiro JOEI , Kenichi MURATA , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO , Nobutoshi FUJII
摘要： A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.
-
公开(公告)号：US20220367573A1
公开(公告)日：2022-11-17
申请号：US17842522
申请日：2022-06-16
发明人： Masaki MURATA , Hideaki MOGI , Shintarou HIRATA , Iwao YAGI , Yasuharu UJIIE , Masashi BANDO , Raku SHIRASAWA , Hajime KOBAYASHI , Mitsunori NAKAMOTO , Yuichi TOKITA
IPC分类号： H01L27/30 , H01L27/146 , H04N9/04 , H01L51/00 , H01L51/44
摘要： An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.022 秒)
