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    Solid-state imaging device and electronic apparatus
    2.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US12125858B2

    公开(公告)日：2024-10-22

    申请号：US17755950

    申请日：2020-11-02

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Yukio Kaneda ,  Hideaki Togashi ,  Fumihiko Koga ,  Masahiro Joei ,  Kenichi Murata ,  Shintarou Hirata ,  Nobuhiro Kawai

    IPC分类号： H01L27/146 ,  H04N25/77

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14636 ,  H04N25/77

    摘要： A solid-state imaging device capable of achieving higher image quality is provided.
    Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a type identical to a type of charge accumulated in the charge accumulation unit.

    Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element
    3.
    发明授权
    Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element 有权

    公开(公告)号：US12120897B2

    公开(公告)日：2024-10-15

    申请号：US17424582

    申请日：2020-01-21

    申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Takushi Shigetoshi ,  Hideaki Togashi ,  Junpei Yamamoto ,  Shinpei Fukuoka ,  Moe Takeo ,  Sho Nishida

    IPC分类号： H10K39/32

    CPC分类号： H10K39/32

    摘要： A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

    Imaging element, stacked imaging element, and solid-state imaging apparatus
    4.
    发明授权
    Imaging element, stacked imaging element, and solid-state imaging apparatus 有权

    公开(公告)号：US11670659B2

    公开(公告)日：2023-06-06

    申请号：US16624205

    申请日：2018-06-21

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Taiichiro Watanabe ,  Fumihiko Koga ,  Kyosuke Ito ,  Hideaki Togashi ,  Yusaku Sugimori

    IPC分类号： H01L27/146 ,  H04N25/77

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H04N25/77

    摘要： An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

    Imaging element, laminated imaging element, and solid-state imaging device
    5.
    发明授权
    Imaging element, laminated imaging element, and solid-state imaging device 有权

    公开(公告)号：US11621290B2

    公开(公告)日：2023-04-04

    申请号：US16643331

    申请日：2018-06-08

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Nobuhiro Kawai ,  Hideaki Togashi ,  Fumihiko Koga ,  Tetsuji Yamaguchi ,  Shintarou Hirata ,  Taiichiro Watanabe ,  Yoshihiro Ando

    IPC分类号： H01L27/146

    摘要： A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.

    Imaging element and imaging device
    9.
    发明授权
    Imaging element and imaging device 有权

    公开(公告)号：US12040340B2

    公开(公告)日：2024-07-16

    申请号：US17250348

    申请日：2019-07-01

    申请人： SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Hideaki Togashi ,  Moe Takeo ,  Sho Nishida ,  Junpei Yamamoto ,  Shinpei Fukuoka ,  Takushi Shigetoshi

    IPC分类号： H01L27/146 ,  H01L23/48

    CPC分类号： H01L27/14636 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14638

    摘要： Provided is an imaging element that includes a semiconductor substrate, a first photoelectric converter, a through electrode, a first dielectric film, and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter and penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate and has a first film thickness. The second dielectric film is provided on a side surface of the through hole and has a second film thickness. The second film thickness is less than the first film thickness.