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    Solid-state imaging device and manufacturing method therefor, and electronic apparatus
    4.
    发明授权
    Solid-state imaging device and manufacturing method therefor, and electronic apparatus 有权

    公开(公告)号：US09985068B2

    公开(公告)日：2018-05-29

    申请号：US15029717

    申请日：2014-10-14

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Taiichiro Watanabe ,  Fumihiko Koga

    IPC分类号： H01L27/148 ,  H01L27/146

    CPC分类号： H01L27/1464 ,  H01L27/14607 ,  H01L27/14614 ,  H01L27/14641 ,  H01L27/14689

    摘要： There is provided a solid state imaging device including a pixel including a photoelectric conversion unit that generates and accumulates a charge according to a received light amount, a charge accumulation unit that accumulates the generated charge, a first transfer transistor that transfers the charge of the photoelectric conversion unit to the charge accumulation unit, a charge holding unit that holds the charge to read out as a signal, and a second transfer transistor that transfers the charge of the charge accumulation unit to the charge holding unit, in which a gate electrode of the first transfer transistor is formed to be buried up to a predetermined depth from a semiconductor substrate interface, and the charge accumulation unit is formed in a longitudinally long shape to be extended in a depth direction along a side wall of the gate electrode of the first transfer transistor to be buried therein.

    Solid-state imaging device, and electronic apparatus
    8.
    发明授权
    Solid-state imaging device, and electronic apparatus 有权

    公开(公告)号：US11765483B2

    公开(公告)日：2023-09-19

    申请号：US17656584

    申请日：2022-03-25

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Yuji Uesugi ,  Fumihiko Koga ,  Keisuke Hatano

    IPC分类号： H04N25/76 ,  H01L27/146

    CPC分类号： H04N25/76 ,  H01L27/14643

    摘要： Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

    Solid-state imaging device, method of driving the same, and electronic apparatus
    9.
    发明授权
    Solid-state imaging device, method of driving the same, and electronic apparatus 有权

    公开(公告)号：US11575847B2

    公开(公告)日：2023-02-07

    申请号：US17185539

    申请日：2021-02-25

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Fumihiko Koga

    IPC分类号： H04N5/357 ,  H04N5/367 ,  H04N5/374 ,  H01L27/146 ,  H01L27/30 ,  H04N5/369 ,  H04N9/04 ,  H04N5/363 ,  H04N5/365 ,  H04N5/3745

    摘要： The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.